77N TRANS Search Results

Contextual Info: TERM. NO.’s FOR REF. ONLY - A - £ i.0 0 4 [.1 0 ] ^ .2 1 0 MAX. [5 .3 3 ] DOT LOCATES TERM. #1 \ 77n + n i n .5 1 0 MAX. [1 2 .9 5 ] .0 7 5 REF. [1 .9 1 ] "7 .0 1 8 X .0 1 0 1 6 [.4 6 X .2 5 ] .0 0 4 MIN. LOT CODE & DATE CODE [.10] .0 3 0 ± . 0 1 0 ( 1 6 )

33077

Abstract: A77C TGC-109-P0O pci-e card drawing cd-1 94v-0 B77C 100WI
Contextual Info: T H IS DRAW ING IS U N P U B L IS H E D . RELEASED FOR ALL P U BLIC ATIO N RIG HTS } • R ES E R V E D . DW BY - COPYRIGHT R E V IS IO N S LOC LTR B2 H IM A PIN PIN B 77P +12' SECTION RE V I S E D PER DATE DWN HMR Rl 3APR- E C O -11 -00530 ' APVD NP T P

Contextual Info: AMC Connector Cinch Advanced Mezzanine Card Connector The Performance Advantages of Compression in a Reliable One-Piece Contact Design Technology The Cinch ZTXT M AMC Connector is a compression style mezzanine connector solution which provides superior performance for standard

Contextual Info: S5277B,S5277G,S5277J,S5277N TOSHIBA Rectifier Silicon Diffused Type S5277B, S5277G, S5277J, S5277N General Purposer Rectifier Applications Unit: mm • Average Forward Current: IF AV = 1.0 A · Repetitive Peak Reverse Voltage: VRRM = 100~1000 V Maximum Ratings (Ta = 25°C)

77N TOSHIBA

Abstract: S5277N diode 77G Toshiba rectifier S5277B S5277G S5277J 77g toshiba S5277
Contextual Info: S5277B,S5277G,S5277J,S5277N TOSHIBA Rectifier Silicon Diffused Type S5277B, S5277G, S5277J, S5277N General Purposer Rectifier Applications Unit: mm • Average Forward Current: IF AV = 1.0 A • Repetitive Peak Reverse Voltage: VRRM = 100~1000 V Maximum Ratings (Ta = 25°C)

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level tield-ettect power transistor in a plastic envelope using ’trench’ technology. The device teatures very low on-state resistance

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level tield-ettect power transistor in a plastic envelope using ’trench’ technology. The device teatures very low on-state resistance

S5277N

Abstract: S5277 S5277B S5277G S5277J
Contextual Info: S5277B,S5277G,S5277J,S5277N TOSHIBA Rectifier Silicon Diffused Type S5277B, S5277G, S5277J, S5277N General Purpose Rectifier Applications Unit: mm • Average Forward Current: IF AV = 1.0 A • Repetitive Peak Reverse Voltage: VRRM = 100~1000 V Maximum Ratings (Ta = 25°C)

ci 4410

Abstract: IRL 3038 TA 7719P KIA7719S KIA7721S KIA7723S KIA7725S KIA7727S KIA7733S KIA7734S
Contextual Info: Under Development APPLICATIONS 1 As Control Circuit of B attery-B acked Memory. (2) As M easure A gainst Erroneous Operations at Power ON-OFF. (3) As M easure A gainst System Runaway at Instantaneous Break of Power Supply etc. (4) As Resetting Function for the CPU-M ounted Equipment,

Contextual Info: 6 VOLT ENHANCED POSITIVE LOCAL VOLTAGE REGULATOR ISSU E 1 - AU G UST 1996 DEVICE DESCRIPTION The devices are suited to local voltage regulation applications, where problems could be encountered with distributed single source regulation, as well as more general

S5277N

Contextual Info: S5277B,S5277G,S5277J,S5277N TOSHIBA Rectifier Silicon Diffused Type S5277B, S5277G, S5277J, S5277N General Purpose Rectifier Applications Unit: mm • Average Forward Current: IF AV = 1.0 A • Repetitive Peak Reverse Voltage: VRRM = 100~1000 V Absolute Maximum Ratings (Ta = 25°C)

S5277N

Abstract: S5277 S5277B S5277G S5277J
Contextual Info: S5277B,S5277G,S5277J,S5277N TOSHIBA Rectifier Silicon Diffused Type S5277B, S5277G, S5277J, S5277N General Purpose Rectifier Applications Unit: mm • Average Forward Current: IF AV = 1.0 A • Repetitive Peak Reverse Voltage: VRRM = 100~1000 V Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: S5277B,S5277G,S5277J,S5277N TOSHIBA Rectifier Silicon Diffused Type S5277B,S5277G,S5277J,S5277N General Purpose Rectifier Applications Unit: mm • Average Forward Current: IF AV = 1.0 A • Repetitive Peak Reverse Voltage: VRRM = 100 to 1000 V Absolute Maximum Ratings (Ta = 25°C)

THERMAL Fuse m20 tf 115 c

Abstract: mux 232n 144n 129P 244n
Contextual Info: ispXPGA Family TM March 2003 Preliminary Data Sheet • Non-volatile, Infinitely Reconfigurable ■ Eight sysCLOCK Phase Locked Loops PLLs for Clock Management • Instant-on - Powers up in microseconds via on-chip E2CMOS based memory • No external configuration memory

118p

Abstract: 31n w6 resistor 85n a4 81p mux 232n
Contextual Info: ispXPGA Family TM May 2003 Preliminary Data Sheet • Non-volatile, Infinitely Reconfigurable ■ Eight sysCLOCK Phase Locked Loops PLLs for Clock Management • Instant-on - Powers up in microseconds via on-chip E2CMOS based memory • No external configuration memory

LFX200B-03f256i

Abstract: D 92 02 78P DIODE PAIR 16X1 16X2 05F256
Contextual Info: ispXPGA Family TM September 2003 Preliminary Data Sheet • Non-volatile, Infinitely Reconfigurable ■ Eight sysCLOCK Phase Locked Loops PLLs for Clock Management • Instant-on - Powers up in microseconds via on-chip E2CMOS based memory • No external configuration memory

Contextual Info: ispXPGA Family TM July 2003 Preliminary Data Sheet • Non-volatile, Infinitely Reconfigurable ■ Eight sysCLOCK Phase Locked Loops PLLs for Clock Management • Instant-on - Powers up in microseconds via on-chip E2CMOS based memory • No external configuration memory

LFX200B-03f256i

Abstract: B17B10
Contextual Info: ispXPGA Family TM July 2003 Preliminary Data Sheet • Non-volatile, Infinitely Reconfigurable ■ Eight sysCLOCK Phase Locked Loops PLLs for Clock Management • Instant-on - Powers up in microseconds via on-chip E2CMOS based memory • No external configuration memory

booth multiplier

Abstract: 97p sped 16X1 16X2 LFX200B-03f256i e30 c15 100 12p
Contextual Info: ispXPGA Family TM January 2004 Preliminary Data Sheet • Non-volatile, Infinitely Reconfigurable ■ Eight sysCLOCK Phase Locked Loops PLLs for Clock Management • Instant-on - Powers up in microseconds via on-chip E2CMOS based memory • No external configuration memory

Contextual Info: ispXPGA Family TM September 2003 Preliminary Data Sheet • Non-volatile, Infinitely Reconfigurable ■ Eight sysCLOCK Phase Locked Loops PLLs for Clock Management • Instant-on - Powers up in microseconds via on-chip E2CMOS based memory • No external configuration memory

8b/10b-Serializer Coding Example

Abstract: U1 V1 and W1 is delta connections TOP 221P equivalent top 245p 235N 58p power control carry look ahead adder CSB 500 F 30p D 92 02 78P DIODE FPBGA-256
Contextual Info: ispXPGA Family Includes High, Performance Low-Cost “E-Series” July 2004 • Non-volatile, Infinitely Reconfigurable • Microprocessor configuration interface • Program E2CMOS while operating from SRAM • Instant-on - Powers up in microseconds via

Contextual Info: DRAM MODULE KMM372V320 8 0BK4 KMM372V320(8)0BK4 Fast Page Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KM M372V320(8)0B is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V320(8)0B consists of thirty-six CMOS 16Mx4bits

Contextual Info: ispXPGA Family June 2004 Preliminary Data Sheet • Non-volatile, Infinitely Reconfigurable ■ Flexible Programming, Reconfiguration, and Testing • Instant-on - Powers up in microseconds via on-chip E2CMOS® based memory • No external configuration memory

cea f23

Contextual Info: ispXPGA Family Includes High, Performance Low-Cost “E” Series July 2004 • Non-volatile, Infinitely Reconfigurable • Microprocessor configuration interface • Program E2CMOS while operating from SRAM • Instant-on - Powers up in microseconds via