7716 MOSFET Search Results
7716 MOSFET Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TCK424G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E | Datasheet | ||
TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet |
7716 MOSFET Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP3415ELT1G S-LP3415ELT1G VDS= -20V RDS ON , Vgs@-4.5V, Ids@-4A = 60 mΩ RDS(ON), Vgs@-2.5V, Ids@-4A = 75 mΩ RDS(ON), Vgs@-1.8V, Ids@-2A = 85 mΩ 3 Features Advanced trench process technology |
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LP3415ELT1G S-LP3415ELT1G 236AB) AEC-Q101 OT-23 | |
Contextual Info: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V LP3415ELT1G RDS ON , Vgs@-4.5V, Ids@-4A = 60 mΩ RDS(ON), Vgs@-2.5V, Ids@-4A = 75 mΩ RDS(ON), Vgs@-1.8V, Ids@-2A = 85 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance |
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LP3415ELT1G 236AB) 3000/Tape& LP3415ELT3G 10000/Tape& OT-23 | |
Contextual Info: AON6708 30V N-Channel MOSFET SRFET General Description Product Summary SRFETTM The AON6708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON and low gate charge.This device is suitable for use as a low side |
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AON6708 AON6708 | |
ao4456Contextual Info: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, |
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AO4456 AO4456 00A/us | |
AO4456Contextual Info: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in |
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AO4456 AO4456 | |
Contextual Info: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4456/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, |
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AO4456 AO4456/L AO4456 AO4456L -AO4456L 00A/us | |
7716 mosfet
Abstract: AON6708
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AON6708 AON6708/L AON6708 AON6708L -AON6708L 7716 mosfet | |
ao4456
Abstract: AO4456l 7716 mosfet 24V 20A SMPS 30V 20A smps TYP31
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AO4456 AO4456/L AO4456 AO4456L -AO4456L 7716 mosfet 24V 20A SMPS 30V 20A smps TYP31 | |
Contextual Info: AON6708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM The AON6708/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON and low gate charge.This device is suitable for use as a low side |
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AON6708 AON6708/L AON6708 AON6708L -AON6708L | |
AOL1412L
Abstract: AOL1412
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AOL1412 AOL1412/L AOL1412 AOL1412L -AOL1412L 00A/us | |
Contextual Info: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, |
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AOL1412 AOL1412 AOL1412L 00A/us | |
Contextual Info: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, |
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AOL1412 AOL1412 00A/us | |
Contextual Info: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AO4456/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, |
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AO4456 AO4456/L AO4456 AO4456L -AO4456L 00A/us | |
Contextual Info: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, |
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AOL1412 AOL1412 | |
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lmh66
Abstract: CLC730146 ADC08100 ADC083000 LMH6505 LMH6552 LMH6622 LMK03000 LMX2531 SMD led spice model
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LMV7219/LMH7220/LMH7322 LMH6702/3 LMH6505 ADC083000 ADC082500/1000 ADC08100 ADC08200/D500 lmh66 CLC730146 ADC08100 ADC083000 LMH6505 LMH6552 LMH6622 LMK03000 LMX2531 SMD led spice model | |
Contextual Info: PT7716— 3.3V 20-A Low -Voltage Programmable Integrated Sw itching Regulator SLTS162B Revised 6/27/2002 Features • +3.3V Input Voltage • 20-A Output Current • 5-bit Programmable: 1.075V to 1.85V (25mV Steps) • VRM 9.0 Compatible • High Efficiency (88%) |
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PT7716â SLTS162B PT7716 27-pin | |
Contextual Info: PT7712— 3.3V 20-A Programmable Integrated Sw itching Regulator SLTS088A Revised 6/27/2002 Features • 3.3V Input Voltage • 20-A Output Current • 4-Bit Programmable Output: 1.3V to 2.05V • High Efficiency (87%) • Differential Remote Sense • Over-Current Protection |
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PT7712â SLTS088A 27-Pin PT7744 PT7712 | |
Contextual Info: PT7713— 3.3V 20-A Programmable Integrated Sw itching Regulator SLTS149A Revised 6/27/2002 Features • 3.3V Input Voltage • 20-A Output Current • 4-bit Programmable: 1.8V to 2.55V (50mV Steps) • High Efficiency (90%) • Differential Remote Sense |
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PT7713â SLTS149A 27-Pin PT7744 PT7713 | |
Contextual Info: PT7711— 5V 20-A Programmable Integrated Sw itching Regulator SLTS087A Revised 6/27/2002 Features • 5V Input Voltage • 20-A Output Current • 5-bit Programmable Output: 1.3V to 3.5V • High Efficiency (93%) • Differential Remote Sense • Over-Current Protection |
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PT7711â SLTS087A 27-Pin PT7745 PT7711 | |
PAL 007 pioneer
Abstract: PAL 007 pioneer mosfet AIAG PPAP MANUAL pioneer PAL 007 A PPAP MANUAL aiag mosfet pal 007 pioneer PAL 008 pioneer pioneer PAL 007 LM2901 SOT23-5 offline switcher
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LMP7716 LP2951 7000/reel PAL 007 pioneer PAL 007 pioneer mosfet AIAG PPAP MANUAL pioneer PAL 007 A PPAP MANUAL aiag mosfet pal 007 pioneer PAL 008 pioneer pioneer PAL 007 LM2901 SOT23-5 offline switcher | |
PAL 007 pioneer mosfet
Abstract: PAL 007 pioneer pioneer PAL 007 A AIAG PPAP MANUAL SOT23-5 i2c based pwm generator pioneer car dvd service manual mosfet pal 007 pioneer PPAP MANUAL aiag SMD Code 12W SOT23 TSOP-20 FOOTPRINT
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aec-q003
Abstract: lme49811 lme49810 IR 720P lm3881 LM49450 LMH6714 lp2953 AEC-Q100 LM3430
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03-5639-7300www 590280-002-JP aec-q003 lme49811 lme49810 IR 720P lm3881 LM49450 LMH6714 lp2953 AEC-Q100 LM3430 | |
AEC-Q003
Abstract: ADC08B3000 LM49450 lmc6762 LMH6626 LME49810 ensw1 LM6511 lp2953 LP5521
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LM2594HV LM2901 LM2904 LMP7716 LP2951 AEC-Q003 ADC08B3000 LM49450 lmc6762 LMH6626 LME49810 ensw1 LM6511 lp2953 LP5521 | |
1000w inverter PURE SINE WAVE schematic diagram
Abstract: 1000w audio amplifier circuit diagram database PAL 007 pioneer dc-ac inverter PURE SINE WAVE schematic diagram 1000w class d circuit diagram schematics schematic diagram inverter 12v to 24v 1000w mini Audio transformer 200k to 1k ct input 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM schematic LG lcd backlight inverter lm98725 users guide
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