7625 TRANSISTOR Search Results

BCX75

Abstract: PM 7540 pin sieg BCX76 Q62702-C637 f4 MARKING CODE TO92
Contextual Info: SIE D SIEMENS • 3535bOS Q0mfiD3 TOT « S I E G SIEMENS AKTIENGESELLS CHA F PNP Silicon AF Transistors • • • • High current gain High collector current Low collector-emitter saturation voltage Complementary types: BCX 73, BCX 74 NPN Type BCX 75

Transistor BSX 24

Abstract: BSX24 7626 transistor
Contextual Info: *BSX 24 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN S ILIC IU M , PLAN A R E P IT A X IA L îfc Preferred device D is p o s itif recommandé General applications Applications générales Maximum power dissipation Case TO -18

DTC1D3RE

Abstract: T106 T107 T146 T147 DTC1D3RUA
Contextual Info: b ÿ > V 7s £ /Transistors DTC1D3RE/DTC1D3RU A/DTC1D3RKA DTC1D3RE/DTC1D3RUA DTC1D3RKA Digital Transistors Includes Resistors /Transistor Switch ' í+ ff^ jÉ H /D im e n s io n s (Unit : mm) 1) s W T Z . Œ O & i f [ i i * i a i U T L ' S t : DTC1D3RE » ,

transistor C636

Abstract: case sot30 BCX75 C637 BCX76 SOT-30
Contextual Info: BCX 75, BCX76 PNP Transistors for AF pre-stages, driver stages and switching applications B C X 7 5 and BCX 76 are epitaxial PNP silicon planar transistors in a package 10 A 3 DIN 41868 sim. SO T-30 . The transistors are suitable for use in AF preand driver stages as well as for switching applications.

SOT-30

Abstract: IC102T Q62702-C637-S2 Q62702-C636-S2 PNP-Transistoren
Contextual Info: PNP-Transistoren für IMF-Vor- und Treibeirstufen BCX 75 BCX 76 BCX 75 und BCX 76 sind epitaktische PNP-Silizium-Planar-Transistoren im Kunststoffgehäuse 10 A3 DIN 41 868 ähnl. SOT-30 . Die Transistoren sind für NF-Vor- und Treiberstufen sowie für Schalteranwendungen geeignet. Als Komplementär-Transistoren dazu sind vorgesehen

RF2603

Abstract: TSSOP-16 010403
Contextual Info: RF2603 6 2.8V PCS UPCONVERTER Typical Applications • TDMA/CDMA PCS Systems • Portable Battery-Powered Equipment Product Description The RF2603 is a upconverter/pre-driver designed for PCS systems. The device features single-ended IF and LO inputs and single-ended RF output for ease of interface. The RF2603 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT

Contextual Info: RF2137
    
 
      • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery Powered Equipment
    The RF2137 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT

RF2126

Contextual Info: RF2126

            • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery Powered Equipment 2 • PCS Communication Systems
    The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT

Contextual Info: RF* RF2319 Preliminary MICRO DEVICES LINEAR CATV AM PLIFIER Typ ical A p plications • CATV Distribution Amplifiers 3 The RF2319 is a low cost, high power, high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT

RF2125

Abstract: RF2128 transistor w26
Contextual Info: RF RF2128 M ICRO-DEVICES POWER AMPLIFIERS M E D IU M POW ER L IN E A R A M P L IF IE R G allium A rsenide H eterojunction B ipolar Transistor HBT process, and has been designed fo r use as the final RF am plifier in 2.4 5 G H z ISM applications such as W LAN

Contextual Info: RF RF2128 MICRO DEVICES POWER A M P L IF IE R S M EDIUM POWER LINEAR AM PLIFIER Gallium Arsenide Heterojunction Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and POS terminals. The part also will function as the final

Contextual Info: RF2132 2 LINEAR POWER AMPLIFIER Typical Applications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery-Powered Equipment 2 Product Description -A- The RF2132 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT

Contextual Info: RF RF2128 MICRO DEVICES POWER A M P L IF IE R S M EDIUM POWER LINEAR AM PLIFIER Gallium Arsenide Heterojunction Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and POS terminals. The part also will function as the final

RF2119

Abstract: PSSOP16 F2119
Contextual Info: RF RF2119 Preliminary M ICRO-DEVICES POWER AMPLIFIERS H IG H E F F IC IE N C Y 2 V POW ER A M P L IF IE R ufactured on an advanced Gallium Arsenide Heterojunc­ tion Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in hand-held

class h power amplifier schematic

Abstract: power supply schematic diagram RF2125
Contextual Info: RF RF2125 M ICRO-DEVICES POWER AMPLIFIERS H IG H POW ER L IN E A R A M P L IF IE R Hum A rsenide H eterojunction B ipolar Transistor HBT process, and has been designed fo r use as the final RF am plifier in digital PCS phone transm itters and base sta ­

Contextual Info: RF RF2125 MICRO DEVICES POWER A M P L IF IE R S HIGH PO W ER LINEAR A M PLIFIER Hum Arsenide Heterojunction Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base sta­ tions requiring linear amplification operating between

RF2125

Abstract: class h power amplifier schematic transistor J1y
Contextual Info: RF RF2125 M ICRO-DEVICES POWER AMPLIFIERS HIGH POWER LINEAR AMPLIFIER Hum A rsenide H eterojunction B ipolar Transistor HBT process, and has been designed for use as the final RF am plifier in digital PCS phone transm itters and base sta ­ tions requiring linear am plification operating betw een

Contextual Info: RF RF2125 MICRO DEVICES POWER A M P L IF IE R S HIGH POWER LINEAR AM PLIFIER Hum Arsenide Heterojunction Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base sta­ tions requiring linear amplification operating between

Contextual Info: RF RF2125 MICRO DEVICES POWER A M P L IF IE R S HIGH POWER LINEAR AM PLIFIER Hum Arsenide Heterojunction Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base sta­ tions requiring linear amplification operating between

L910

Contextual Info: RF2146
 


      • 4.8V CDMA PCS Handsets • Driver Amplifier in Cellular Base Stations • 4.8V TDMA PCS Handsets • Portable Battery Powered Equipment 2 POWER AMPLIFIERS • 4.8V PACS PCS Handsets
    The RF2146 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT

RF2146

Contextual Info: RF2146 2 PCS LINEAR POWER AMPLIFIER Typical Applications • 4.8V CDMA PCS Handsets • Driver Amplifier in Cellular Base Stations • 4.8V TDMA PCS Handsets • Portable Battery-Powered Equipment 2 Product Description The RF2146 is a high-power, high-efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT

cdi schematics pcb

Abstract: IT28 it27 ac cdi schematic diagram cdi schematic cdi schematics F2152 I960 RF2152
Contextual Info: RF RF2152 Preliminary M ICRO-DEVICES POWER AMPLIFIERS DU AL-M O D E CD M A /A M PS OR TD M A /A M P S 3 V POWER A M P L IF IE R manufactured on an advanced Gallium Arsenide Hetero­ junction Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in dual-mode

Contextual Info: RF2336
       
      • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Broadband Test Equipment • Driver Stage for Power Amplifiers
    4 .004 .000

Contextual Info: RF3106 Proposed
              • 3V CDMA US-PCS Handsets • Spread-Spectrum Systems VCC1 Si CMOS 1 2 7 GND 4 RF OUT 5 VCC2
       Rev A0 000719 0.100 6.0 sq    4.390 2.500 0.600 Dimensions in mm.