74LS86 NOISE IMMUNITY Search Results

M74HC86

Contextual Info: M54HC86 M74HC86 SGS-THOMSON H L H O T IR O D i QUAD EXCLUSIVE OR GATE HIGH SPEED tPD = 13 ns (TYP. at VCc = 5V LOW POWER DISSIPATION lcc = 1 nA (MAX.) at Ta = 25°C HIGH NOISE IMMUNITY VniH = V n il = 28% V CC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS

M74HC86

Contextual Info: Æ 7 SGS-THOMSON Ä T# M54HC86 M74HC86 QUAD EXCLUSIVE OR GATE • HIGH SPEED tPD = 10 ns TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 1 mA (MAX.) AT Ta = 25 *C ■ HIGH NOISE IMMUNITY Vnih = V nil = 28 % Vcc (MIN.) ■ OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS

74LS86 PIN

Abstract: 74hc86 74LS86 gate diagram M74HC86
Contextual Info: M54HC86 M74HC86 SGS-THOMSON QUAD EXCLUSIVE OR GATE • HIGH SPEED tPD = 13 ns TYP. at VCc = 5V ■ LOW POWER DISSIPATION Ice = 1 i*A (MAX.) at Ta = 25°C ■ HIGH NOISE IMMUNITY V nih = VNIL = 28 »/o VCC (MIN.) ■ OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS

ic 74ls86

Abstract: M74HC86 74hc86 54HC 74HC M54HC86 74LS86 noise immunity CRD Diode
Contextual Info: ! SGS-THOMSON M54HC86 M 74HC86 KÆD g[^(ô [i[L[l(gin^ KilD(gS QUAD EXCLUSIVE OR GATE i HIGH SPEED tPD = 13 ns (TYP.) at VCc = 5 V i LOW POWER DISSIPATION Ice = 1 >*A (MAX.) at T a = 25°C i HIGH NOISE IMMUNITY VNIH = V nil = 28% Vcc (MIN.) i OUTPUT DRIVE CAPABILITY

74HC86

Abstract: 74HC86 equivalent 74LS86 noise immunity 74hc86b M74HC86
Contextual Info: M54HC86 M74HC86 SGS-THOMSON M ^ [E [L i O T ( 9 iO ( ê S QUAD EXCLUSIVE OR GATE HIGH SPEED tpD = 10 ns (TYP.) AT Vcc = 5 V LOW POWER DISSIPATION Icc = 1 nA (MAX.) AT Ta = 25 "C HIGH NOISE IMMUNITY V nih = V nil = 28 % Vcc (MIN.) OUTPUT DRIVE CAPABILITY

Contextual Info: TOSHIBA TC74HC86AP/AF/AFN Quad Exclusive OR Gate The TC74HC86A is a high speed CMOS EXCLUSIVE OR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.

M74HC86

Abstract: M54HC86 M54HC86F1R M74HC86B1R M74HC86C1R M74HC86M1R
Contextual Info: M54HC86 M74HC86 QUAD EXCLUSIVE OR GATE . . . . . . . . HIGH SPEED tPD = 10 ns TYP. AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE

TC74HC86P

Abstract: 74LS86 noise immunity
Contextual Info: TC74HC86P/F TC74HC86P/F QUAD EXCLUSIVE OR GATE The TC74HC86 is a high speed CMOS QUAD EXCLUSIVE OR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.

TL 413

Abstract: 74LS86 noise immunity 74LS86 truth table
Contextual Info: TOSHIBA TC74HCT86AP/AF Quad Exclusive OR Gate The TC74HCT86A is a high speed CMOS EXCLUSIVE OR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.

74HC86 equivalent

Contextual Info: SbE D • 7^2*1237 003*5627 Sfl? ■ SGTH Æ T S C S -T H O M S O N ^ 7 #m DMflOMi[L[l TnS®RDÖ i M 54 HC86 M 7 4 H C 86 s g s-THonsoN T " Ì 2 -2-1 QUAD EXCLUSIVE OR GATE ■ HIGH SPEED tPD = 13 ns TYP. at Vcc = 5V ■ LOW POWER DISSIPATION Ice = 1 jtA (MAX.) at TA = 25°C

74LS86

Abstract: DIP14-P-300-2 TC74HC86AF TC74HC86AFN TC74HC86AP
Contextual Info: TO SHIBA TC74HC86AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC74HC86AP, TC74HC86AF, TC74HC86AFN Note The JEDEC SOP (FN) is not available in Japan. QUAD EXCLUSIVE OR GATE The TC74HC86A is a high speed CMOS EXCLUSIVE OR GATE fabricated with silicon gate C2MOS technology.

Contextual Info: TOSHIBA TC74HC86AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC86AP, TC74HC86AF, TC74HC86AFN QUAD EXCLUSIVE OR GATE Note The JEDEC SOP (FN) is not available in Japan The TC74HC86A is a high speed CMOS EXCLUSIVE OR GATE fabricated with silicon gate C2MOS technology.

74LS86p

Abstract: 74LS86 DIP14-P-300-2 TC74HC86AF TC74HC86AFN TC74HC86AP
Contextual Info: TO SHIBA TC74HC86AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC86AP, TC74HC86AF, TC74HC86AFN Note The JEDEC SOP (FN) is not available in Japan QUAD EXCLUSIVE OR GATE The TC74HC86A is a high speed CMOS EXCLUSIVE OR GATE fabricated with silicon gate C2MOS technology.

74LS86

Abstract: DIP14-P-300-2 TC74HC86AF TC74HC86AFN TC74HC86AP ic 74LS86
Contextual Info: TC74HC86AP/AF/AFN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC86AP,TC74HC86AF,TC74HC86AFN Quad Exclusive OR Gate The TC74HC86A is a high speed CMOS EXCLUSIVE OR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent

74LS86 truth table

Abstract: 74LS86 DIP14-P-300-2 TC74HC86AF TC74HC86AFN TC74HC86AP
Contextual Info: TO SH IBA TC74HC86AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC86AP, TC74HC86AF, TC74HC86AFN Note The JEDEC SOP (FN) is not available in Japan QUAD EXCLUSIVE OR GATE The TC74HC86A is a high speed CMOS EXCLUSIVE OR GATE fabricated with silicon gate C2MOS technology.

74ls86

Contextual Info: TOSHIBA TC74HC86AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC86AP, TC74HC86AF, TC74HC86AFN QUAD EXCLUSIVE OR GATE Note The JEDEC SOP (FN) is not available in Japan The TC74HC86A is a high speed CMOS EXCLUSIVE OR GATE fabricated with silicon gate C2MOS technology.

Contextual Info: £ Z 7 SGS-THOMSON A T # [» [fÄ L iO T O K S M54HCT86 M74HCT86 QUAD EXCLUSIVE OR GATE • HIGHSPEED tpo = 15 ns TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 1 nA (MAX.) AT Ta = 25 'C ■ COMPATIBLE WITH TTL OUTPUTS V ih = 2V (MIN.) V il = 0.8V (MAX)

74LS86p

Abstract: 74ls86 DIP14-P-300-2 TC74HCT86A TC74HCT86AF TC74HCT86AP 74LS86 IEC
Contextual Info: TOSHIBA TC74HCT86AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HCT86AP, TC74HCT86AF QUAD EXCLUSIVE OR GATE The TC74HCT86A is a high speed CMOS EXCLUSIVE OR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent

74ls86

Abstract: for ic 74ls86
Contextual Info: TC74HC86AP/AF/AFN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC86AP,TC74HC86AF,TC74HC86AFN Quad Exclusive OR Gate The TC74HC86A is a high speed CMOS EXCLUSIVE OR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent

74LS86 truth table

Abstract: 74HCT86 equivalent
Contextual Info: M54HCT86 M74HCT86 SGS-THOMSON E H mo QUAD EXCLUSIVE OR GATE • HIGHSPEED tPD = 15 ns TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 1 HA (MAX.) AT Ta = 25 °C ■ COMPATIBLE WITH TTL OUTPUTS Vih = 2V (MIN.) V il = 0.8V (MAX) . OUTPUT DRIVE CAPABILITY

Contextual Info: TC74HC86AP/AF/AFN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC86AP,TC74HC86AF,TC74HC86AFN Quad Exclusive OR Gate The TC74HC86A is a high speed CMOS EXCLUSIVE OR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent

M74HC86P

Abstract: M74HC86
Contextual Info: M54HC86 M74HC86 SGS-THOMSON Rffl0» [iy iM ! 0 gi QUAD EXCLUSIVE OR GATE • HIG HSPEED tpD = 10 ns (TYP.) AT Vcc = 5 V ■ LOW POWER DISSIPATION lec = 1 |iA (MAX.) AT T a = 25 °C ■ HIGH NOISE IMMUNITY V nih = V n il = 28 % V cc (MIN.) ■ OUTPUT DRIVE CAPABILITY

Contextual Info: TC74HCT86AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HCT86AP,TC74HCT86AF Quad Exclusive OR Gate The TC74HCT86A is a high speed CMOS EXCLUSIVE OR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent

74LS86

Abstract: DIP14-P-300-2 TC74HCT86A TC74HCT86AF TC74HCT86AP
Contextual Info: TO SH IBA TC74HCT86AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HCT86AP, TC74HCT86AF QUAD EXCLUSIVE OR GATE The TC74HCT86A is a high speed CMOS EXCLUSIVE OR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent