744 777 Search Results

19 744

Abstract: wuerth 744 773 10 744 wurth wuerth choke 744 744 510 1 744 510 68 744 510 22 744 220 rdc semiconductor wuerth choke 744 773 10
Contextual Info: more than you expect Design Kit for Switcher CAD III Inductors more than you expect SMT Power-Chokes for Switcher CAD III Inductors 744 510 1 744 511 0 744 540 4 744 561 68 744 570 27 744 773 056 744 776 10 L: RDC: I: L: 10,0 . µH RDC: 0,075 Ω . I: 1,0

Contextual Info: DESIGN KIT Texas Instruments TECHNICAL DATA: L: IR: Isat: RDC: 0.82 ~ 1500 µH 0.52 ~ 27 A 0.68 ~ 35 A 0.0009 ~ 2.3 Ω Order Code 744 728 Version 2.0 www.we-online.com Texas Instruments 744 028 000 82 744 028 002 L: 0.82 H L: IR: 2.00 A IR: Isat: 1.60 A

WURTH 744 777 20

Abstract: WE-PD 777 744 744 771 20 744 777 920 wurth 744 777 002 744 777 smd diode 777 wurth 744 744 777 147 wuerth 744 771 133
Contextual Info: more than you expect TECHNICAL DATA: L 0: 1.00 - 470.0 µH RDCmax: 6.00 - 3010.00 mΩ I N: 0.64 - 12.00 A Isat: 0.80 - 12.50 A Sample Kit SMD - Shielded Power Inductors WE-PD Type M and L Order Code 744 777 Version 1.0 more than you expect SMD - Shielded Power Inductors WE-PD

c3378

Abstract: C3374 T10AH250V fuse c3377 af/rf signal generator 36 pin Centronics female connector to 26 pin power amplifier af car 4442 sine wave generator using ic 555 C3376 CONNECTOR 5 PIN macho
Contextual Info: COMMUNICATIONS SERVICE MONITOR 2944B Operating Manual Document part no. 46892/744 Issue 1 20 March 2006 COMMUNICATIONS SERVICE MONITOR 2944B  Aeroflex International Ltd. 2006 No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying,

PK-70873-0631

Contextual Info: II 12 10 9 7 8 6 1 4 71439 :i r c u i t S IZ E 3 DIM. A DIM. B DIM. C 20 13.90 .547 9.00 .354 12.40 30 18.90 .744 14.00 17.40 40 23.90 .941 .551 19.00 .685 22.40 17.22 .678 22.22 28.90 .748 24.00 .882 27.40 .875 27.22 1.138 33.90 .945 29.00 1.079 32.40 1.072

WE-PD XL

Abstract: WE-PD L 744 771 006 WE-PD-XL wuerth 744 771 147 LM25574 LM25575 LM25576 LM5574 LM5575
Contextual Info: more than you expect SIZE: a x b x c in mm 12.0 x 12.0 x 10.0 12.0 x 12.0 x 8.0 12.0 x 12.0 x 6.0 7.0 x 7.0 x 4.5 10.0 x 10.0 x 3.8 10.0 x 9.0 x 5.4 TECHNICAL DATA: L 0: 4.7 - 100 H DCRmax: 0.011 - 0.38 Ω Isat: 0.75 - 13.00 A I N: 0.79 - 9.30 A Design Kit for Simple Switcher

GaAs FET HEMT Chips

Abstract: 2064 fet FLK017XP DIE CHIP 51 FET
Contextual Info: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for

Contextual Info: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for

gearbox rev

Abstract: RPM 777 Cw 334 2SK2776-SMQ 2SA1962-OQ 2SC4935-O(Q)
Contextual Info: Single direction synchronous geared motors • ■ ■ ■ Constant speed, dependent on supply frequency Wide range of speeds Direction of rotation controlled by long-life mechanical anti-return >107 starts Permanent magnet rotor Types Applications - Programming devices

Contextual Info: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for

Contextual Info: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: hadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for

FLK017XP

Abstract: GaAs FET HEMT Chips
Contextual Info: FLK017XP - GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P-|<jB = 20.5dBm Typ. High Gain: G ^ b = 8.0dB(Typ.) High PAE: riadd = 26%(Typ.) Proven Reliability DESCRIPTION

FLK017XP

Abstract: GaAs FET HEMT Chips
Contextual Info: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for

Contextual Info: SCHAFFNER Schaffner’s worldwide sales, distribution and production network HEADQUARTERS Schaffner Elektronik AG Nordstrasse 11 CH-4542 Luterbach Switzerland Tel: 032 6816 626 Fax: (032) 6816 641 EUROLOGISTICS CENTER Schaffner 1A, avenue de Suisse F-68311 liizach

LST-2130

Abstract: CD 1517 LST-780 LST-1010 LST-2020 LST-1680 1120 LST-1120 LST-900 cd 1691
Contextual Info: 12-360 RE RE TU RN LIBERTY SERIES VALVE-REGULATED SEALED , LEAD-CALCIUM BATTERY WITH PRELYTE® CY E CL LEAD MODEL LST For Telecommunication Applications 780-2130 Ampere-hours FEATURES & BENEFITS • Valve-regulated for low maintenance and low cost operation

ferrum

Abstract: CH-8953 F-68311 CH-4542 RG41 SCHAFFNER FN 610 selco usa Schaffner
Contextual Info: SCHAFFNER IEC inlet filter FN 9246 The basis for the IEC inlet filter series FN 9246 was extensive development with manufacturers of top of the range power supplies. The design allows users to cut cost during assembly, and the high performance in a small package means that customers have more

GEDELEX

Abstract: UG-94 Radiall R161-715 Radiall R161-753-000 Radiall R191 UG-1185 R161-020 R191 316 700 r161168 R161 753 000
Contextual Info: STANDARD COAXIAL CONNECTORS N series ISO 9001 APPROVED N CONTENTS N Page RADIALL company profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-5 N series introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-7

ferrum

Abstract: ind 160UH EH28-1.5-02-27M SCHAFFNER 400hz SSR
Contextual Info: SCHAFFNER Common mode suppression chokes • • • • Current rating up to 5A Broadband attenuation characteristics Low leakage flux UL rated materials • • • • Nennströme bis 5A Breitbandige Dämpfungseigenschaften Minimaler Streufluss UL konformes Material

guideSLVU081

Abstract: WE-PD 777 744 744 778 122 M20110
Contextual Info: TPS62050, TPS62051 TPS62052, TPS62054, TPS62056 www.ti.com SLVS432D – SEPTEMBER 2002 – REVISED OCTOBER 2003 800-mA SYNCHRONOUS STEP-DOWN CONVERTER FEATURES DESCRIPTION • The TPS6205x devices are a family of high-efficiency synchronous step-down dc/dc converters ideally suited

amd athlon 64 socket 939

Abstract: k A1659A LSI 53C710 1FT1-0002 PA-7200 intel 8042 RTL8150 MPC6041 3050RX PA-8900
Contextual Info: The OpenPA Project First Edition Paul Weissmann Berlin Preface This is the dead-tree, made-for-printing edition of The OpenPA Project openpa.net . The content is based on the online version’s content from mid-June 2006, parts and pieces were removed and modified

gw 340 diode

Abstract: DIODE 236 1334
Contextual Info: MITEQ AU-1642 AMPLIFIER FREQUENCY MHz GAIN (dB) (Min.) MODEL NUMBER VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1dB Gain (dB) 27 26 25 24 23 22 21 20 19 18 145 240 340 430 525 620 715 810 25 24 23 22 21 20 19 18 17 16 905 1000

Contextual Info: HB56D51236 Series 524,288-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56D51236B is a 512k x 36 dynamic RAM module, mounted 16 pieces of 1 Mbit DRAM HM514256JP sealed in S O J package and 8 pieces of 256k-bit DRAM (HM51256CP) sealed in PLCC package. An outline of the HB56D51236B is

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WE-PD 777 744

Abstract: TPS6205x TPS62050 TPS62050DGS TPS62051 TPS62051DGS TPS62052 TPS62052DGS TPS62054 TPS62056
Contextual Info: TPS62050, TPS62051 TPS62052, TPS62054, TPS62056 www.ti.com SLVS432D – SEPTEMBER 2002 – REVISED OCTOBER 2003 800-mA SYNCHRONOUS STEP-DOWN CONVERTER FEATURES DESCRIPTION • The TPS6205x devices are a family of high-efficiency synchronous step-down dc/dc converters ideally suited