72873 Search Results

VMO 440

Abstract: ixys VMO 440 VMO 550-01F lb 1470 2360A
Contextual Info: HiPerFETTM MOSFET Module VMO 550-01F VDSS = 100 V = 590 A ID25 RDS on = 2.1 mW D N-Channel Enhancement Mode G E 72873 G Preliminary Data S KS S Symbol Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 10 kW 100 V VGS Continuous

diode n04

Abstract: ic 7698 ic 7698 pin detail MIXA30W1200TED pcb diagram welding inverter CIRCUIT diagram welding inverter
Contextual Info: MIXA30W1200TED Six-Pack XPT IGBT VCES = 1200 V IC25 = 43 A VCE sat = 1.8 V Part name (Marking on product) MIXA30W1200TED 15, 16 25, 26 17 1 5 9 2 6 10 NTC 23, 24 21, 22 19, 20 E 72873 18 3 4 7 11 8 12 Pin configuration see outlines. 13, 14 27, 28 Features:

G4EU

Abstract: E72873 MIXA20W1200TMH
Contextual Info: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin configuration see outlines. G2 G4 EU G6 EV

Contextual Info: IGBT Modules Sixpack ^C25 VCES VCE sat typ. 90 A 1200 V 2.2 V Short Circuit SOA Capability Square RBSOA E 72873 Preliminary data Symbol Conditions Maximum Ratings v CES v CGR T j = 25°C to 150°C 1200 V T,J = 2 5 ° C to 150°C;} FL = 2 0 k ft 1200 V VeES

T 3512 H diode

Abstract: diode T 3512 H A5140 ds 35-12 e
Contextual Info: IGBT Modules Sixpack ^C25 V CES V CE sat typ. 45 A 1200 V 2.2 V Short Circuit SOA Capability Square RBSOA E 72873 Preliminary data Symbol Conditions v CES v CGR Tj = 25°C to 150°C T,J = 2 5 °C to 150°C;} FL = 2 0 kft VeES v GEM Continuous ±20 V Transient

TS 100-12

Contextual Info: ÖIXYS MH 100*12 A3 MIO 100*12 A3 Um 100-12 A3 IGBT M odules lC25 = 135 A Short Circuit SOA Capability ^ ces ” ^ Square RBSOA ^ C E s a t t yP. = M il MID I ^ ^-2 V MDI E' : : 60—I- • i : E 72873 P relim in ary data S ym bo l C o n d itio n s M ax im u m R atin g s

IXYS DS 145

Abstract: diode 14512 H
Contextual Info: ÖIXYS Mil 145*12 A3 MIO 145*12 A3 U m 145-12 A3 IGBT M odules lC25 = 160 A Short Circuit SOA Capability Square RBSOA ^ ces ” ^ ^ C E s a t t yP. = M il MID I ^ ^-2 V MDI E' : : 60—I- isÖL • i : E 72873 P relim in ary data S ym bo l C o n d itio n s

Contextual Info: MWI150-12T8T Six-Pack Trench IGBT VCES = 1200 V IC25 = 215 A VCE sat = 1.7 V Part name (Marking on product) MWI150-12T8T 16, 17, 18 30, 31, 32 5 1 19 6 2 27 28 29 NTC 9 10 24 25 26 21 22 23 E 72873 20 3 7 11 4 8 12 Pin configuration see outlines. 13, 14, 15

Contextual Info: MID 550-12 A4 MDI 550-12 A4 IGBT Modules IC25 = 670 A VCES = 1200 V VCE sat typ. = 2.3 V Short Circuit SOA Capability Square RBSOA MDI MID 3 3 1 2 3 11 10 9 1 11 10 8 9 8 1 2 2 E 72873 Symbol Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW

Contextual Info: MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4 IC25 = 270 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MDI MID 3 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 8 9 8 1 2 2 E 72873 Symbol Conditions Maximum Ratings VCES

pcb diagram welding inverter

Abstract: MWI100-12T8T resonant inverter for welding mwi10012t8t pcb diagram power supply welding inverter
Contextual Info: MWI100-12T8T Six-Pack Trench IGBT VCES = 1200 V IC25 = 145 A VCE sat = 1.7 V Part name (Marking on product) MWI100-12T8T 16, 17, 18 30, 31, 32 19 10 6 2 27 28 29 NTC 9 5 1 24 25 26 21 22 23 E 72873 20 3 7 11 4 8 12 Pin configuration see outlines. 13, 14, 15

MIXA60W1200TED

Abstract: ic 7698 solar inverters circuit diagram ic 7698 pin detail
Contextual Info: MIXA60W1200TED Six-Pack XPT IGBT VCES = 1200 V IC25 = 85 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA60W1200TED 15, 16 25, 26 17 1 5 9 2 6 10 NTC 23, 24 21, 22 19, 20 E 72873 18 3 4 7 11 8 12 Pin configuration see outlines. 13, 14

Contextual Info: MIXA40W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 60 A VCE sat = 1.8 V Part name (Marking on product) MIXA40W1200TMH E 72873 Pin coniguration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required

ic 7698

Abstract: MIXA30W1200TED diode n04 pcb diagram welding inverter solar inverters circuit diagram CIRCUIT diagram welding inverter ic 7698 pin detail 7698
Contextual Info: MIXA30W1200TED Six-Pack XPT IGBT VCES = 1200 V IC25 = 43 A VCE sat = 1.8 V Part name (Marking on product) MIXA30W1200TED 15, 16 25, 26 17 1 5 9 2 6 10 NTC 23, 24 21, 22 19, 20 E 72873 18 3 4 7 11 8 12 Pin configuration see outlines. 13, 14 27, 28 Features:

pcb diagram welding inverter

Abstract: MWI100-12T8T NTC solar sensor
Contextual Info: MWI100-12T8T Six-Pack Trench IGBT VCES = 1200 V IC25 = 145 A VCE sat = 1.7 V Part name (Marking on product) MWI100-12T8T 16, 17, 18 30, 31, 32 5 1 19 6 2 27 28 29 NTC 9 10 24 25 26 21 22 23 E 72873 20 3 7 11 4 8 12 Pin configuration see outlines. 13, 14, 15

MIXA40W1200TED

Abstract: NTC 2500 5540A
Contextual Info: MIXA40W1200TED Six-Pack XPT IGBT VCES = 1200 V IC25 = 55 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA40W1200TED 15, 16 25, 26 17 1 5 9 2 6 10 NTC 23, 24 21, 22 19, 20 E 72873 18 3 4 7 11 8 12 Pin configuration see outlines. 13, 14

ic equivalent MID 400

Abstract: E72873 550-12A4 high power free wheeling diode
Contextual Info: MID 550-12 A4 MDI 550-12 A4 IGBT Modules IC25 = 670 A VCES = 1200 V VCE sat typ. = 2.3 V Short Circuit SOA Capability Square RBSOA MID MDI 3 3 1 2 3 11 10 9 1 11 10 8 9 8 1 2 2 E 72873 Symbol Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW

diode 14512 H

Contextual Info: Li IXYS Mil 145-12 A3 MID 145-12 A3 MDI 145-12 A3 IGBT Modules lC25 = 160 A Short Circuit SOA Capability ^ ces ” ^ Square RBSOA ^CE sat typ. = ^ Mil MID I Ir 7C ^J 6 0 -+ ^ MDI I 11 l. o1 M : : ^ l iïjÔ jj E 72873 Preliminary data Symbol Conditions Maximum Ratings

0002K

Abstract: 550-12A4
Contextual Info: MID 550-12 A4 MDI 550-12 A4 IGBT Modules IC25 = 670 A VCES = 1200 V VCE sat typ. = 2.3 V Short Circuit SOA Capability Square RBSOA MID MDI 3 3 1 2 3 11 10 9 1 11 10 8 9 8 1 2 2 E 72873 Preliminary data Symbol Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

bt 2025

Contextual Info: IGBT Modules Sixpack ^C25 VCES VCE sat typ. 60 A 1200 V 2.2 V Short Circuit SOA Capability Square RBSOA E 72873 Preliminary data Symbol Conditions Maximum Ratings vCES vCGR VeES v GEM T j = 25°C to 150°C 1200 V 1200 V Continuous ±20 V Transient ±30 V

Contextual Info: Li IXYS Mil 75-12 A3 MID 75-12 A3 MDI 75-12 A3 IGBT Modules lC25 = 90 A Short Circuit SOA Capability ^ ces ” ^ Square RBSOA ^ C E s a t typ. = Mil MID I Ir 7C ^J 6 0 -+ ^ MDI I 11 l. o1 M : : ^ ^ l iïjÔ jj E 72873 Preliminary data Symbol Conditions

VMO 440

Contextual Info: HiPerFETTM MOSFET Module VMO 550-01F VDSS = 100 V ID25 = 590 A RDS on = 2.1 mW D N-Channel Enhancement Mode G E 72873 G Preliminary Data S KS S Symbol Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 10 kW 100 V VGS Continuous

Contextual Info: VUM 85-05A VDSS = 500 V ID25 = 130 A Ω RDS on = 36 mΩ Rectifier Module for Three Phase Power Factor Correction Preliminary data VRRM VRRM, DRM VDSS Type (FAST Diode) (Diode, Thyr.) (MOSFET) V V V 600 500 500 VUM 85-05A E 72873 Symbol Conditions Maximum Ratings

MJ1016

Abstract: robot circuit diagram free FREE ENERGY DIAGRAM MWI75-12A8 12A-8 mwi7512a8
Contextual Info: MWI 75-12A8 Six-Pack NPT IGBT VCES = 1200 V IC25 = 125 A VCE sat typ. = 2.2 V Part name (Marking on product) MWI 75-12A8 13, 21 1 5 9 2 6 10 19 17 15 E 72873 3 7 11 4 8 12 Pin configuration see outlines. 14, 20 Features: Application: Package: • NPT IGBT technology