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    72410M Search Results

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    72410M Price and Stock

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    Molex 55917-2410 (MICROCLASP 55917)

    Connector, Header, 24Pos, 2Row, 2Mm; Connector Systems:Wire-To-Board; Pitch Spacing:2Mm; No. Of Rows:2Rows; No. Of Contacts:24Contacts; Contact Termination Type:Through Hole Straight; Product Range:Microclasp 55917 Series Rohs Compliant: Yes |Molex 55917-2410
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark 55917-2410 (MICROCLASP 55917) Bulk 163 1
    • 1 $0.53
    • 10 $0.53
    • 100 $0.53
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    • 10000 $0.53
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    TURCK Inc WKC 5724-10M

    Neu |Turck WKC 5724-10M
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    Newark WKC 5724-10M Bulk 1
    • 1 $73.10
    • 10 $73.10
    • 100 $73.10
    • 1000 $73.10
    • 10000 $73.10
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    TURCK Inc PSG5M5724-10M

    Npo |Turck PSG5M5724-10M
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    Newark PSG5M5724-10M Bulk 1
    • 1 $55.64
    • 10 $55.64
    • 100 $55.64
    • 1000 $55.64
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    TURCK Inc PSW5M5724-10M

    Npo |Turck PSW5M5724-10M
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    Newark PSW5M5724-10M Bulk 1
    • 1 $66.25
    • 10 $66.25
    • 100 $66.25
    • 1000 $66.25
    • 10000 $66.25
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    TURCK Inc RSC RKC 5724-10M

    Neu |Turck RSC RKC 5724-10M
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    Newark RSC RKC 5724-10M Bulk 1
    • 1 $70.80
    • 10 $70.80
    • 100 $70.80
    • 1000 $70.80
    • 10000 $70.80
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    72410M Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: polyfet rf devices F2047 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended


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    F2047 72410m 1110AvenidaAcaso, 72mDD1 PDF

    Contextual Info: polyfet rf devices F1520 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended lifetime. Low output capacitance


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    F1520 \Q612V 1110AvenidaAcaso, 724100e PDF

    Contextual Info: polyfet rf devices F2013 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended lifetime. Low output capacitance


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    F2013 72410CH 0DD023S PDF

    Contextual Info: polyfet rf devices F2247 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended


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    F2247 1110AvenidaAcaso, PDF

    Contextual Info: polyfet rf devices F1020 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1,11 process features gold metal for greatly extended


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    F1020 72410m D000135 PDF