72 038 Search Results

Contextual Info: MOSEL VITELIC V437216S04VTG 3.3 VOLT 16M x 72 HIGH PERFORMANCE PC100AND 100 M HZ SDRAM UNBUFFERED DIMM PRELIMINARY Features Description • 168 Pin Unbuffered 16,777,216 x 72 bit Oganization SDRAM Modules ■ Utilizes High Performance 8M x 8 SDRAM in TSOPII-54 Packages

Contextual Info: 9 NO. OF CIRC. "XX” DIM. "B " DIM. "A" 8 MATERIAL NO. STANDARD MATERIAL NO. ( -10A OPTION) 7 MATERIAL NO. (-72 OPTION! MATERIAL NO, ( -10A-72 O PT .) 02 10.2 (.401 5.00 I . 197) 398503102 398503202 398503302 398503502 03 15.2 1.60) 10.00 1.394) 398503103

THMY7232G1EG-80

Abstract: 3DE3 D036 SA247 M9101
Contextual Info: TOSHIBA THMY7232G1EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232G1EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.

k2718

Contextual Info: M OSEL V I T E L I C V437216S04VTG 3.3 VOLT 16M x 72 HIGH PERFORMANCE PC100 AND 100 M H Z SDRAM UNBUFFERED DIMM PRELIMINARY Features Description • 168 Pin Unbuffered 16,777,216 x 72 bit Oganization SDRAM Modules ■ Utilizes High Performance 8M x 8 SDRAM in

Contextual Info: PRELIMINARY M im O N I MT2LSYT3272T1/T2, MT4LSY6472T1/T2 32K, 64K X 72 SYNCHRONOUS SRAM MODULE SYNCHRONOUS SRAM MODULE 32K, 64K x 72 SRAM 256KB/512KB, 3.3V, FLOW-THROUGH SYNCHRONOUS BURST, SECONDARY CACHE MODULES FEATURES PIN ASSIGNMENT Front View 160-lead, dual-in-line memory module (DIMM)

CL 1107

Contextual Info: TO SH IB A THMY7240D1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 72-BIT SYNCHRONOUS D R A M MODULE DESCRIPTION The THMY7240D1BEG is a 4,194,304-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6416BFTL DRAMs and an unbuffer on a printed circuit board.

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-422000LFB72F 3.3 V OPERATION 2M -WORD BY 72-BIT DYNAMIC RAM MODULE HYPER PAGE MODE ECC Description The MC-422000LFB72F is a 2 097 152 words by 72 bits dynamic RAM module on which 9 pieces of 16M DRAM ( m PD 4217805L) are assembled.

cs 2313

Contextual Info: M OSEL V I T E L I C V43728S04VTG 3.3 VOLT 8M x 72 HIGH PERFORMANCE PC100 AND 100 MHZ SDRAM UNBUFFERED DIMM PRELIMINARY Features Description • 168 Pin Unbuffered 8,388,608 x 72 bit Oganization SDRAM Modules ■ Utilizes High Performance 8M x 8 SDRAM in TSOPII-54 Packages

Nippon capacitors

Contextual Info: ^ O T O RO LA 0rder thi, document by MCM72F8/D SEMICONDUCTOR TECHNICAL DATA Advance Information 2MB and 4MB Synchronous Fast Static RAM Module MCM72F8 MCM72F9 The MCM72F8 2MB is conf igu red as 256K x 72 bits and the MCM72F9 (4MB) is configured as 512K x 72 bits. Both are packaged in a 168 pin dual-in-line

1ss nec

Contextual Info: PRELIM INARY DATA S H E E T MOS IN TEGRATED CIRCUIT MC-428LFF72 3.3 V OPERATION 8 M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, HYPER PAGE MODE EDO Description Th e M C-428LFF72 1« • 6.388,608 words by 72 bits dynam ic RAM m oduli on which 8 pieces of 84 M DRAM :

pc3200u-30331

Abstract: PC3200U-30331-B2 PC3200U PC3200U 30331 DDR400 infineon PC3200U-30331-C3 HYS64D32301HU-5-C PC3200 PC3200U-30331-a1 HYS64D64300HU-5-C
Contextual Info: Data Sheet, Rev. 1.1, May. 2005 HYS64D32301HU–[5/6]–C HYS[72/64]D64300HU–[5/6]–C HYS[64/72]D128320HU–[5/6]–C 184-Pin Unbuffered Double Data Rate SDRAM UDIMM DDR SDRAM RoHS Compliant Products DDR SDRAM Memory Products N e v e r s t o p t h i n k i n g .

Contextual Info: P R E LIM IN A R Y DATA S H E E T NEC MOS INTEGRATED CIRCUIT MC-422000LAB72F 3.3 V OPERATION 2M -WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-422000LAB72F is a 2 097 152 words by 72 bits dynamic RAM module on which 9 pieces of 16M DRAM ( /xPD 4217800L) are assembled.

Contextual Info: 2 3 4 5 6 7 Part number D E G 5 . 56 4. 56 1. 19 16 6 . 83 5. 83 1. 19 43 8 . 10 7 . 10 2. 46 9 . 37 8. 37 2. 46 97 10 . 64 9. 64 3. 73 24 11 . 91 1 0 . 91 3. 73 16 51 13 18 12 18 5 00 17 78 14 45 13 45 5 00 7 0 17 12 19 05 15 72 14 72 6 27 0 2 4 13 9 7 18

PC 4200U-444

Abstract: PC2-4200U-444-11 HYS64T64000HU-37-A 1Gb PC2-4200u 444 12 d3 HYS64T32000 MO-237 T64000 HYS72T64000HU-37-A SPD Revision 1.1 HYS64T32000HU-5-A
Contextual Info: D a t a S h e e t , Rev. 0.87, J u n e 2 0 0 4 HYS64T32000[G/H]U–[3.7/5]–A HYS[64/72]T64000[G/H]U–[3.7/5]–A HYS[64/72]T128020[G/H]U–[3.7/5]–A 240-Pin Unbuffered DDR2 SDRAM Modules DDR2 SDRAM Memory Products N e v e r s t o p t h i n k i n g . The information in this document is subject to change without notice.

Contextual Info: TOSHIBA TENTATIVE TC55YD1873YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 262,144-WORD BY 72-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1873YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory

Contextual Info: TOSHIBA TC55YD1873YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 262,144-WORD BY 72-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1873YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory

Contextual Info: W3J512M72K-XPBX W3J512M72K-XLBX *ADVANCED 4GB – 512M x 72 DDR3 SDRAM 1.35V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1,066, 1333, 1600* Mb/s  Differential clock terminations included

Contextual Info: Data sheet Multifunctional three-phase monitoring relays CM-MPN CM-MPN.52, CM-MPN.62 and CM-MPN.72 The three-phase monitoring relays CM-MPN.x2 monitor the phase parameters phase sequence, phase failure, over- and undervoltage as well as phase unbalance. Characteristics

enclosure

Abstract: fiber patch panels
Contextual Info: Instruction Sheet Distribution Patch Panel Enclosures 408-8430 559542-[ ] 24-Port , 559614-[ ] (48-Port), and 559552-[ ] (72-Port) 09 MAY 08 Rev A Chassis Back Cover (Shown Open) Patch Panel Cable Clamp Bracket (2 Places) Front Cover Cutout (Shown Open) (4 Places)

upturn

Abstract: switch 2711 LR26229
Contextual Info: Introduction | 61 Handles / Actuators | 62 Configurations | 67 Operating Characteristics | 69 Delay Curves & Specs | 70 Specifications | 71 Hardware | 72 Decision Tables | 73 T/R/PP/PR CR/CPP/CPR SNAPAK SNAPAK® Series Magnetic Circuit Protectors T/R/PP/PR CR/CPP/CPR Series

MIL-C-28731

Abstract: datasheet ty 8016 ty 8016 VARIL tensile strength crimping
Contextual Info: The Varicon Range Number of Contacts Pitch Body Style Current Rating Amps Series Number 0.050" 2 to 152 Plugs and Receptacles Staggered, Fixed: Solder, Eyelet 5 8218 0.050" 18, 30, 36, 42, 54, 72 Plugs and Receptacles Staggered, Fixed: Straight & Right Angle Solder, Eyelet

TIES16A

Contextual Info: «701 TIES16A Gallium Arsenide Infrared-Emitting Diode Texas Optoelectronics, Inc. DESIGNED TO EM IT NEAR-IN FRARED R A D IEN T ENERGY WHEN FORW ARD BIASED • High Output Power . . . 100 m W Min at 25 °C • Hemispherically Shaped 72-Mil-Diameter Chip •

Contextual Info: STM32F302xB STM32F302xC ARM Cortex-M4 32b MCU+FPU, up to 256KB Flash+32KB SRAM 2 ADCs, 1 DAC ch., 4 comp, 2 PGA, timers, 2.0-3.6 V operation Datasheet - production data Features • Core: ARM Cortex -M4 32-bit CPU with FPU 72 MHz max , single-cycle multiplication

Contextual Info: STM32F302xB STM32F302xC ARM -based Cortex®-M4 32b MCU+FPU, up to 256KB Flash+ 32KB SRAM, 2 ADCs, 1 DAC ch., 4 comp, 2 PGA, timers, 2.0-3.6 V Datasheet - production data Features • Core: ARM® Cortex®-M4 32-bit CPU with FPU 72 MHz max , single-cycle multiplication and