71V124 Search Results

PB44

Abstract: PRODUCT CHANGE NOTIC (PCN) 9902-02 topmark 71124 PB32 71016s PJ32 PRODUCT CHANGE NOTIC PCN 9902-02
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT CHANGE NOTIC PCN PCN #: SR 9902-02 DATE: 2/15/99 Product Affected: 71V016S, 71016S, 71V124S, 71124S in PB44, PB32 and PJ32 packages Manufacturing Location Affected: N/A

71V124SA

Abstract: 71V016SA
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN 6/1/99 PCN #: SR9905-02 DATE: Product Affected: 71V016S, 71V124S, 71V016SA, 71V124SA Manufacturing Location Affected: NA 8/30/99 Date Effective:

Reliability product sheet

Abstract: 71V124S15Y
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR 9905-03 DATE: Product Affected: 71V124S15Y , 71V124S20Y 6/1/99 MEANS OF DISTINGUISHING CHANGED DEVICES: Product Mark "N" Die Revision on Top Mark

QS001

Abstract: 71V124SA
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN 11/30/00 PCN #: SR0011-05 DATE: Product Affected: 71V016SA , 71V124SA Manufacturing Location Affected: N/A Date Effective: Contact: Title: Phone #:

71V124SA

Abstract: 71V016SA
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN 5/3/00 PCN #: SR0003-02 DATE: Product Affected: 71V016S, 71V124S, 71V016SA, 71V124SA Manufacturing Location Affected: Date Effective: 8/3/00 Contact:

Contextual Info: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY 71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for

H9723

Abstract: h9740 l9718 L9712 L9709 L9727 T9934 l9731 L9706 l9735
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS April 1998 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT April 1998 TABLE OF CONTENTS Section I: Introduction Section II:

71V124SA

Abstract: 71V124 IDT71V124
Contextual Info: 71V124 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Commercial (0°C to +70°C) and Industrial (–40°C to

Contextual Info: 128K x 24 Three Megabit 3.3V CMOS Static RAM Features ◆ Description High density 3 megabit 3.3V static RAM Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array Fast RAM access times: 10,12,15ns Single 3.3V power supply Multiple Vcc & GND pins for maximum noise immunity

s0324

Contextual Info: dt) 3.3V CMOS STATIC RAM 1 MEG 128K x 8-BIT) REVOLUTIONARY PINOUT PRELIMINARY 71V124 Integrated De vice Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for reduced noise.

CS16LV40963

Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
Contextual Info: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D

71V124SA

Abstract: 71V124 IDT71V124
Contextual Info: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ 71V124 Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Commercial (0°C to +70°C) and Industrial (–40°C to

Contextual Info: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ 71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times

7MMV4101S10BG

Abstract: IDT71V124 IDT7MMV4101
Contextual Info:  PRELIMINARY IDT7MMV4101 128K x 24 THREE MEGABIT 3.3V CMOS STATIC RAM Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 3 megabit 3.3V static RAM • Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array • Fast RAM access times: 10,12,15ns

IDT71V124

Abstract: IDT7MMV4101
Contextual Info: 128K x 24 Three Megabit 3.3V CMOS Static RAM Features ◆ Description High density 3 megabit 3.3V static RAM Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array Fast RAM access times: 10,12,15ns Single 3.3V power supply Multiple Vcc & GND pins for maximum noise immunity

SO32-2

Abstract: IDT71V124 IDT71V124SA SO32
Contextual Info: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ 71V124SA/HSA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times

71v124

Abstract: IDT71V124 IDT71V124SA
Contextual Info: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ 71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times

71016S20PHG8

Abstract: 71016S15YG 71256SA15Y 71256SA20YI 71256-sa15y 71256sa25tp 7164 71V124SA12YGI 6116SA25TPGI 71V424L10PHG
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 Phone #: 408 284-8200 PRODUCT DISCONTINUANCE NOTICE (PDN) PDN #: Issue Date: Contact: Title: Phone #: Fax #: E-mail: SR-09-08R1 29-Apr-2010 Last Buy Deadline for Submission of Order:

71256-sa15y

Abstract: 71256sa25tp 71256SA15TP 71016s12y 71256SA15Y 7164S20Y 71256SA20YI 71024S15Y 6116SA15TPG 7164L25YGI
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 Phone #: 408 284-8200 PRODUCT DISCONTINUANCE NOTICE (PDN) PDN #: Issue Date: Contact: Title: Phone #: Fax #: E-mail: SR-09-08 Last Buy Deadline for Submission of Order:

SO32-3

Abstract: SO-323 IDT71V124 IDT71V124SA SO32
Contextual Info: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ 71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times

S0324

Abstract: S0323
Contextual Info: PRELIMINARY 71V124 o Integrated De o 3.3V CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED EC revolutionary pinout (center power/GND) for reduced noise. • Equal access and cycle tim es

Contextual Info: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout 71V124SA Features Description ◆ The 71V124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative

71v416l10

Abstract: 71256SA15Y 71V424S15PHGI8 71V416S12PHGI8 71V416-S12PHG 71256-SA12YG 71V424S15YGI 71256SA12YG 71V35761SA200BG8 71V416L10PHGI8
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 Phone #: 408 284-8200 PRODUCT DISCONTINUANCE NOTICE (PDN) PDN #: Issue Date: Contact: Title: Phone #: Fax #: E-mail: SR-10-07 Last Buy Deadline for Submission of Order:

L9939

Abstract: B897 k9920 L9924 k1917 JESD22-B100 K9928 K2837 P9848 h9910
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS October 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT October 1999 TABLE OF CONTENTS Section I: Introduction Section II: