7188 DIP Search Results

s482

Abstract: s484
Contextual Info: Pdt Integrated DeviceTechnology Inc C M O S STATIC RAM 64K 1 6 K x 4-BIT) IDT 7188S IDT 7188L FEATURES: DESCRIPTION: • The ID T7188 is a 65,536-blt high-speed static RAM organized as 16K x 4. It is fabricated using IDT's high-performance, highrellability te c h n o lo g y -C E M O S . This state-of-the-arl technology,

Contextual Info: National 240 * 241*244 ß Semiconductor 54F/74F240«54F/74F241«54F/74F244 Octal Buffers/Line Drivers with TRI-STATE Outputs General Description Features The 'F240, ’F241 and ’F244 are octal buffers and line driv­ ers designed to be employed as memory and address driv­

HS9390C

Abstract: HS9390 9390 9390B
Contextual Info: SÉpeX HS9390 "“c Corporali o r p o r a tio n ^ SIGNAL PROCESSING EXCELLENCE 16-BIT ULTRA HIGH SPEED, LOW GLITCH D/A CONVERTER FEATURES • 75nsec settling time 4mA step to ±0.006% ■ Segmented switching architecture reduces glitch a re a to 140% FSR-nsec

2989

Abstract: IDT7188S 7188L70 IDT7188 IDT7188L 7188S25
Contextual Info: CMOS Static RAM 64K 16K x 4-Bit IDT7188S IDT7188L Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 25ns are available. The IDT7188 offers a

IDT7188

Abstract: IDT7188L IDT7188S 7188 dip 2989
Contextual Info: IDT7188S IDT7188L CMOS Static RAM 64K 16K x 4-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 25ns are available. The IDT7188 offers a

Contextual Info: CMOS STATIC RAM 64K 16K x 4-BIT IDT7188S IDT7188L I n t e g r a t e d D e v ic e T e c h n o lo g y , I n c . FEATURES: DESCRIPTION: • High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35ns (max.)

2989

Abstract: 7188L70 7188S25
Contextual Info: IDT7188S IDT7188L CMOS Static RAM 64K 16K x 4-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 25ns are available. The IDT7188 offers a

Contextual Info: CM O S STATIC RAM 64K 1 6 K x 4-BIT I ? 8? IDT7188L FEATURES: DESCRIPTION: • The ID T7188 Is a 6 5 ,5 3 6 -b lt h ig h -s p e e d sta tic RAM orga n ized as 16K x 4. It is fa b rica te d u sin g ID T's h ig h -p erform a n ce, hlghre lla b lllty te c h n o lo g y —C EM O S . T h is state-of-the-art tech n olo gy,

DTM03

Contextual Info: CMOS STATIC RAM 64K 16Kx 4-BIT IDT7188S IDT7188L Integrated Device Technology, Inc. FEATURES: of-the-art technology, combined with innovative c irc u it design techniques, provides a cost effective approach for memory • High-speed (equal access and cycle times)

sensor 3414

Abstract: 79-3405-52-03 79-3381-55-04 circular connector
Contextual Info: Serie 718 718 Ü TI 620 702 709 710 711 712 719 423 425 440 581 678 680 682 720 Sensor Steckverbinder Serie 718 M8x1 Sensor connectors series 718 (M8x1) Kabelsteckverbinder • Rundsteckverbinder M8x1 mit Schraubverriegelung oder Schnappverriegelung 8mm

Contextual Info: CMOS STATIC RAM 64K 16Kx 4-BIT IDT7188S IDT7188L Integrated D evice Technology, Inc. of-the-art technology, combined with innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access tim es as fast as 20ns are available. The IDT7188

Contextual Info: CMOS STATIC RAM 64K 16K x 4-BIT IDT7188S IDT7188L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle times) — Military: 2 0 /2 5 /3 5 /4 5 /5 5 /7 0 /8 5 n s (m ax.) — Com mercial: 15/2 0 /2 5 /3 5 n s (m ax.)

s484

Abstract: t dc s479
Contextual Info: I I N T E G R A T E D D E VI CE 14E D 4 Ö 2 S 77 1 0 0 Q 3 3 4 3 7 CMOS STATIC RAM 64K 16K x 4-BIT IDT 7188S IDT 7188L T - H b ' 1 3 ' l O FEATURES: • • High-speed (equal access and cycle times) - Military: 2 0 /2 5/30 /3 5 /4 5 /5 5 /7 0/85 n s (max.)

7188s20

Abstract: 7188L 55AC10
Contextual Info: CMOS STATIC RAM 64K 16Kx 4-BIT IDT7188S IDT7188L Integrated D evice T ech n o lo gy, Inc. of-the-art technology, combined with innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 20ns are available. T h e ID T 7 188

40874

Abstract: T80FR
Contextual Info: 4 -B IT D IG ITA L-TO ANALOG CONVERTER WITH LOOK-UP TABLE FU JITSU M B 40874 A p r. 1989 Edition 1.0 MB40874 4-B IT DIGITAL-TO-ANALOG CONVERTER WITH LOOK-UP TABLE The Fujitsu MB40874 is 50 MSPS M eg a Sam ple Per Second 4 - b it D ig ita lto -A n a lo g C o n v e rte r w ith L o o k -u p Table. The MB40874 is designed fo r

64 CERAMIC LEADLESS CHIP CARRIER LCC

Abstract: L7C164CC20 L7C164WC12 L7C164WC15 L7C164WC20
Contextual Info: L7C164/166 16K x 4 Static RAM L7C164/166 DEVICES INCORPORATED 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 16K x 4 Static RAM with Common I/O q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 12 ns maximum q Low Power Operation

L7C164CC20

Abstract: L7C164WC12 L7C164WC15 L7C164WC20
Contextual Info: L7C164/166 16K x 4 Static RAM L7C164/166 DEVICES INCORPORATED 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 16K x 4 Static RAM with Common I/O q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 12 ns maximum q Low Power Operation

Contextual Info: 16K x 4 Static RAM L 7 C 1 6 4 /1 6 5 / 1 6 6 Features Description_ □ 16K by 4 Static RAM with common I/O Q Auto-Powerdown design □ Advanced CMOS technology □ High speed — to 20 ns worst-case □ Low Power Operation Active: 285 mW typical at 45 ns

64 CERAMIC LEADLESS CHIP CARRIER LCC

Abstract: L7C164CC20 L7C164WC12 L7C164WC15 L7C164WC20
Contextual Info: L7C164/166 16K x 4 Static RAM L7C164/166 DEVICES INCORPORATED 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION ROW SELECT 8 O ROW ADDRESS CONTROL The L7C164 and L7C166 provide asynchronous unclocked operation with matching access and cycle times.

L7C164PC85

Abstract: L7C164PC25 8A720 ma 8630 L7C164PC35 L7C164PC45
Contextual Info: L7C164/165/166 16K x 4 Static RAM Features Description □ 16K by 4 Static RAM with common I/O □ Auto-Powerdown design □ Advanced CMOS technology □ High speed — to 20 ns worst-case □ Low Power Operation Active: 285 mW typical at 45 ns Standby: 50 xW typical

Contextual Info: L7C1R4/1RR *- — • — - - L 7 C 134 MGG 16K x 4 Static RAM JbVUI-S ■ :XJHHO -■A Ih □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation

s2ld

Abstract: MA 166s
Contextual Info: . i O <I!!H € •Hi L 7 C 16K x 4 Static RAM DEVICES INCORPORATED DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 8 ns maximum □ Low Power Operation Active: 210 mW typical at 35 ns

Contextual Info: L 7 C 164/166 16K x 4 Static RAM DEVICES INCORPORATED DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 325 mW typical at 25 ns

Contextual Info: L 7 C 1 6 4 /1 6 6 16K x 4 Static RAM FEATURES □ 16K x 4 Static RAM with Common I/O □ □ □ □ Auto-Powerdown Design Advanced CMOS Technology High Speed — to 12 ns maximum Low Power Operation Active: 325 mW typical at 25 ns Standby: 400 [iW typical