71 DT 4 Search Results

Contextual Info: EUPEC blE ]> • BMGaS'ì? ODOllbS 354 « U P E C TT 71 F, TD 71 F, DT 71 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information TT 71 F screwing depth max. 12 fillister head screw M6x15 Z4-1 III II plug A 2,8 x 0,8 I 14 15 25 25 K2 G2 K1 G1 13,3 5 80 94 AK K A K1 G1 K2 G2 VWK Febr. 1997 TT 71 F, TD 71 F, DT 71 F

skkt 71 / 16

Abstract: semikron skkt 71/12d skkt 71/16 semikron skkt 19 120 semikron skkt semikron thyristor skkt semikron skkh heatsink for skkt 72 semipack skkt skkt 1000
Contextual Info: VRSM VRRM dv/ VDRM dt cr V V ITRMS (maximum value for continuous operation) 125 A V/µs ITAV (sin. 180; Tcase = 78 °C) 80 A 700 600 500 SKKT 71/06 D 900 800 500 SKKT 71/08 D SKKT 72/08 D 1300 1200 1300 1200 1000 SKKT 71/12 E SKKT 72/12 E 1500 1400 1000 SKKT 71/14 E SKKT 72/14 E

Contextual Info: SEMIKRON zurück V rsm V rrm dv/ Itrms (maximum value for continuous operation V drm dt)cr 125 A V V V/|xs 700 600 500 SKKT 71/06 D 900 800 SEMIPACK 1 Thyristor / Diode Modules Itav (sin. 180; T oase = 78 °C) 80 A - - SKKH 72/06 D 500 SKKT 71/08 D SKKT 72/08 D1> SKKH 71/08 D

ISOPLUS247

Contextual Info: HiPerFETTM Power MOSFETs IXFR 80N20Q TM ISOPLUS247 , Q-Class Electrically Isolated Back Surface VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr £ 200 ns RDS(on) = 200 V = 71 A = 28mW Preliminary data Symbol Test Conditions Maximum Ratings

Supercool

Abstract: Supercool BOX-27 Supercool BOX 27 DA Supercool AB box 27 40120 S-401-20 heat sensor fan project Supercool 12vdc DA-075-12-02-00-00 Supercool sweden
Contextual Info: 1 2 3 4 5 6 Specification: Ta=32°C D A 75 12 Direct Air Fan(s), cold side: Fan(s), warm side: Temperature controller, sensor: Temperature control settings, trim options: Additional controller information: 2 71 W at dT=0°C. Tolerance: ±10%. 12 VDC. Nominal: 12 VDC, Max: 15 VDC.

NFC10-24S05 computer products

Abstract: NFC10-24D15* computer products NFC10-12D15 NFC10-24S15 DC/DC converter max 12v NFC10 NFC10-24D12 NFC10-12D12 NFC10-12S05 NFC10-12S12
Contextual Info: COMPUTER P R DT S / POWER SEE ]> £313103 ODDDbn 4 ^ • CPR N F010 SERIES 10 W att High Density D C /D C Converters * Delivers 10 watts in a 71°C ambient temperature •S m a ll 1" X 2" X 0.375" package * Single and dual outputs * Rugged construction, easy to mount

Contextual Info: IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.14 Qg (Max.) (nC) 140 Qgs (nC) 24 Qgd (nC) 71 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.14 Qg (Max.) (nC) 140 Qgs (nC) 24 Qgd (nC) 71 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole

Contextual Info: Data Sheet No. PD60299 IRS212 7, 71, 8, 81 (S)PbF CURRENT SENSING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation • • • • • • Fully operational to +600 V Tolerant to negative transient voltage dV/dt immune Application-specific gate drive range:

91214

Abstract: IRFP254
Contextual Info: IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.14 Qg (Max.) (nC) 140 Qgs (nC) 24 Qgd (nC) 71 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: TT T O S H I B A -CDISC R E T E / O P T 01 ßFliaTTaSQ 9097250 TOSHIBA <DISCRETE/OPTO> 99D 16804 TOSHIBA F IE L D SEMICONDUCTOR QQltäQ4 DT-39-\3 E FFE C T TRANSISTOR Y T F 2 5 0 SILIC O N N CHANNEL MOS TYPE TECHNICAL DATA 71 -MOS I HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

L9470

Contextual Info: BT T Ô S Ï Ï Î B F T D Î S C R E T E / OPTO > 9097250 TOSHIBA dT | c1Dcì 75 S 0 D ooim s CDISCRETE/OPTO 39C 01945 71 J J - / / SEMICONDUCTOR T O S H IB A T R A N S IS T O R 2 S C 2 1 O 3 A TECHNICAL DATA m 2 S IL IC O N NPN E P IT A X IA L PLANAR ff x m. m

Contextual Info: Fast Thyristor Modules Type V V drm RRM V V TO h V m i2 Itavm/Ic A 10 m s, ^vj max kA2s 10 m s, ^vj max •103 A/°C 180° el sin t* = ^vj max 1150 6,60 45/85 1,30 It s m A Vdsm=Vdrm, Vrsm=Vrrm+ 100V S i2d t It r m s m ( d i /d t ) cr A/pS DIN tvi = ^vj max IEC747-6

irkt 40

Abstract: IRKH 180 irk 60 IRKT IRK 91 IRK 180 71 DT 4 irkt 180
Contextual Info: IRK.71, .91 Series Bulletin I27132 rev. D 09/97 Circuit Configurations Table IRKT IRKH IRKL 1 ~ (1) ~ (1) ~ + (2) + (2) + (2) (3) (3) (3) G1 K1 (4) (5) K2 G2 (7) (6) G1 K1 (4) (5) K2 G2 (7) (6) Ordering Information Table Device Code T 91 1 2 3 / 16 S90 IRK.92 types

thyristor aeg

Abstract: aeg powerblock tt aeg powerblock tt 32 n thyristor AEG t 10 n 600 aeg thyristor aeg powerblock td aeg tt 18 n 1200 aeg tt 46 n 1200 AEG DD 65 N 1200 K AEG DD 31 n 1200
Contextual Info: A E G CORP 17E D • GOa'iMSb 000=1313 4 Powerblocks für netzgeführte Stromrichter Power modules for line commutated converters Modules surmoulés pour applications secteur é zté -o l I - - « r- a 3 TT.N - Vollgesteuerte Kompaktbaustelne/Fully controlled power modules/Modules surmoulés à 2 thyristors

Contextual Info: UPD72123GJ-5BG 1/4 IL00 * C-MOS ADVANCED GRAPHIC DISPLAY CONTROLLER GND GND VDD (+5V) GND VDD (+5V) GND GND GND VDD (+5V) GND GND 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

Contextual Info: • International 1 &r] Rectifier 4BS545E DQlbb^O QQfl ■ INR s e r ie s 56, .71, i r k . 26, .41, . HIGH VOLTAGE THYRISTOR/ DIODE .91 ADD-A-pak Power Modules and THYRISTOR/ THYRISTOR Features INTERNATIONAL RECTIFIER ■ ■ E le c tric a lly is o la te d b a s e p late

Contextual Info: PD - 9.1320B International IG R Rectifier IRLI3803 HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Ultra Low On-Resistance • Isolated Package • High Voltage Isolation = 2.5KVRMS <D • Sink to Lead Creepage Dist. = 4.8mm

Contextual Info: CXD8160Q 1/2 IL08D C-MOS CHROMA LINE CRAWL CANCELLER AND DIGITAL CLAMPER GND GND 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 VDD VDD GND GND GND CXD8160 : NC CXD8935 : GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 65 66 67 68 69

Q500A

Contextual Info: CS 300 Phase Control Thyristors VRRM = 1200-1800 V IT RMS = 600 A IT(AV)M = 380 A 3 2 VRSM VDSM VRRM VDRM V V 1300 1700 1900 1200 1600 1800 4 Type 1 2 4 3 CS 300-12io3 CS 300-16io3 CS 300-18io3 Not for new application Symbol Test Conditions IT(RMS) IT(AV)M

TM-127-1

Abstract: 50x50x3 TM-127-31-5 20AWG 40X40X7 TM1273 TM127 TM1271
Contextual Info: www.i-t.su info@i-t.su òåë: 095 785-48-05, 739-09-95 Òåðìîýëåêòðè÷åñêèå ìîäóëè (ýëåìåíòû Ïåëüòüå) Ýëåìåíò Ïåëüòüå - ýòî ïîëóïðîâîäíèêîâûé ýëåìåíò òèïà òåïëîâîé ïîìïû,

Contextual Info: PD - 9.1320A International IGR Rectifier IRLI3803 PRELIMINARY HEXFET Power MOSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm

skn diodes

Abstract: Semikron SKR 71 semikron skn 70/12 semikron SKN 71 diode skn 71 SKN 71/04 SKR 71/04 Semikron SKR 40 /12 semikron SKR 45 SKR 50 semikron skn 50
Contextual Info: VRSM Rectifier Diodes IFRMS maximum values for continuous operations VRRM 80 A 150 A SKN 45 SKN 70 SKN 71 IFAV (sin. 180; Tcase = .) 50 A (118 °C) 95 A (100 °C) V 400 SKN 45/04 SKR 45/04 SKN 70/04 SKR 70/04 SKN 71/04* SKR 71/04* 800 SKN 45/08 SKR 45/08 SKN 70/08 SKR 70/08 SKN 71/08* SKR 71/08*