702 Y TRANSISTOR Search Results

702 y TRANSISTOR

Abstract: JE701 JE700 702 P TRANSISTOR je 701
Contextual Info: r n r e n i maiml MJE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE 800/801/802/803 ABSOLUTE MAXIMUM RATINGS C haracteristic

702 y TRANSISTOR

Abstract: KSE800
Contextual Info: PNP EPITAXIAL KSE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BAS E-EMITTER RESISTORS * Complement to KSE800/801/802/803 ABSOLUTE MAXIMUM RATINGS C haracteristic

702 y TRANSISTOR

Abstract: 702 Z TRANSISTOR transistor marking 702 application marking 702 FAIRCHILD ic 701
Contextual Info: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor

bd437 siemens

Abstract: transistor d437 D437 transistor bd 439
Contextual Info: ESC D • ôSBSbOS QQQ43b3 4 M S I E 6 • -h ' z i -H NPN Silicon Epibase Transistors ' BD 433 BD 435 0 -BD 437 BD 439 BD 441 SIEMENS AKTIENGESELLSCHAF The transistors BD 4 3 3 , BO 4 3 5 , BD 4 3 7 , BD 4 3 9 , and BD 441 are NPN silicon epibase

EL 14v 4c

Abstract: z06m Q62702-D98 transistor 1B transistor 7g BDY39 Transistor bdy 11
Contextual Info: N P N -T ran sisto r fü r leistungsstarke N F -E ndstufen BDY 39 BDY 39 ist ein einfachdiffundierter NPN -Silizium -Transistor im Gehäuse 3 A 2 DIN 41 872 ähnlich T O -3 . Der Kollektor ¡st m it dem Gehäuse elektrisch verbunden. Der Transistor ist besonders für den Einsatz in leistungsstarken NF-Endstufen und in stabilisierten Netzgeräten

JE802

Abstract: MJE802 transistor tic 701 MJE800 MJE101 transistor mje802 MJE801 MJE803 MJE702 MJE703
Contextual Info: MJE700thru MJE703 PNP/MJE800 thru MJE803 NPN continued E L E C T R IC A L C H A R A C T E R IS T IC S (T q = 25°C unless otherwise noted) | Characteristic O F F C H A R A C T E R IS T IC S Collector-Emitter Breakdown VoltageM) (1C * 50 m Adc , \ q « 0)

relay busbar

Abstract: SB-S11-P1-01-1-1A 710 opto coupler Weidmuller plc terminal phoenix 17PLUS-Q02-00 50035-G32 DC24 relay coupler with 2 n o contacts E-1048-7
Contextual Info: Solid State Remote Power Controller E-1048-7. Description The E-T-A Solid State Remote Power Controller E-1048-7. is a transistorised switching device providing both protection and signalisation. It is suitable for all applications where the capabilities

transistor k 702

Abstract: TRANSISTOR S 802 kse800
Contextual Info: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor

MJE801

Abstract: MJE802 JE700 MJE703 je802 MJE800 MJE803 transistor mje802 TRANSISTOR JC 515 MJE701
Contextual Info: MJE700 thru MJE703 PNP SILICON MJE800 th,uMJE803 NPN 4.0 AMPERE PLASTIC MEDIUM-POW ER C O M PLEM EN T A R Y SILIC O N T R A N SIST O R S . . . designed to replace discrete driver and o u tp u t stages in co m p le ­ m entary a u d io am plifier applications.

OPB814

Abstract: OP8813 transistor k 425 OPB813S10 OPB817 C1969 MST6120 e/H21A1
Contextual Info: ÖUALITY T E C H N O L O G I E S CORP QUALITY TECHNOLOGIES S7E D 7MbböSl QQQ3b53 1 SLOTTED TRANSISTOR OPTOSWITCHES MST6XXX MST8XXX MST7XXX MST9XXX PACKAGE TYPES liL E D TYPE 6 E DESCRIPTION E The MSTXXXX series of optoswitohes is designed to allow the user maximum flexibility in his application.

TRANSISTOR SMD MARKING CODE 702

Abstract: 702 TRANSISTOR smd 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N 702 y smd TRANSISTOR 702 N smd transistor SMD transistor marking 702 702 transistor smd code 702 L TRANSISTOR smd 70.2 TRANSISTOR smd
Contextual Info: Central S e m ic o n d u c to r C o rp . NEW PRODUCT ANNOUNCEMENT 2N7002 SMD Power MOSFET % SOT-23 Case DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process. This device can be utilized in the computer, telecommunications

DTC144WKA ROHM BY SMT

Abstract: DTC144 DTC144WU dtC144 transistor
Contextual Info: h 7 > V \X £ /'Transistors DTC144 WE/DTC144 WUA/DTC144 WKA DTC144WE/DTC144WU A/DTC144WKA Digital Transistors Includes Resistors h7>y Z ' f y ^-/Transistor Switch fl.Jg-^-;±EÜ]/Dimensions (Unit : mm) • w * 1) A 'i'77 :xffl<7)iêjjî;£p*3jK LT i'-S/c

Contextual Info: DATA SHEET PHOTOCOUPLER PS2702-1 ,PS2702-2,PS2702-4 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR SOP MULTI PHOTOCOUPLER SERIES nepoc series DESCRIPTION T he P S 2 7 0 2 -1 , P S 2702-2, P S 2702-4, are o p tica lly co u p le d Isolators c o n ta in in g a G aA s light em ittin g d io d e and an

Contextual Info: Solid State Remote Power Controller E-1048-7. Description The E-T-A Solid State Remote Power Controller E-1048-7. is a transistorised switching device providing both protection and signalisation. It is suitable for all applications where the capabilities

ALD1702

Contextual Info: E A dvanced ALD1702A/ALD1702B ALD1702/ALD1703 L iN E A R D e vic es , In c . 5V RAIL TO RAIL PRECISION OPERATIONAL AMPLIFIER GENERAL DESCRIPTION FEATURES The ALD1702/ALD1703 is a mqnqlittiic operational amplifier intended primarily for a wide range of analog applications in +5V single power

2SC4775

Abstract: 701b7 702 P TRANSISTOR 702 y TRANSISTOR 2SC4776M
Contextual Info: h ~7> V 7 2 /T ra n s is to rs 2S C 4775/2S C 4776M /2S C 4777/2S C 4778 2 S C 4 7 7 5 /2 S C 4 7 7 6 M x t: * * y 7 7“U•-*% NPN y 1J □ > h7 > y 7 £ 2 3 Q 4 7 7 7 /2 S C 4 7 7 8 Epitaxial Planar NPN Silicon Transistor - « 'J 'O T * M /G e n e r a l Small Signal Amp.

blv 33 transistor

Abstract: BLV25 rf 2222 vp1020 multilayer
Contextual Info: N AMER PHILIPS/DISCRE TE bTE » • bbS3<i31 ÜÜEflc Mcl l'il BLV25 I V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily for use in v.h.f.-f.m . broadcast transmitters. Features: • internally matched input for wideband operation and high power gain;

bd132

Abstract: transistor ALG 20
Contextual Info: BD132 _ J V _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE DATA Collector-base voltage open emitter

transistor h44

Abstract: BD132 PNP POWER TRANSISTOR SOT-32 BD131 NPN POWER TRANSISTOR SOT-32
Contextual Info: BD132 _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE D A T A Collector-base voltage open em itter Collector-em itter voltage (open base)

k72 transistor sot 23

Abstract: transistor marking s72 k72 sot-23 transistor s72 k72 sot 23 k72 transistor S72 transistor S72 marking 702 TRANSISTOR sot-23 K72 SOT23
Contextual Info: 2N7002-01 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~ *\ : h - A TOP VIEW

2SB945

Contextual Info: Power Transistors 2SB945 2SB945 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD127Q . *-* U n it mm 4 .¿m ax. 10-2max. • Features 2.9 max. • L ow c o lle c to r -e m itte r s a tu ra tio n v o lta g e V ce <ssd

BUW58

Abstract: leistungstransistoren Q62702 Q62901-B11-A Q62901-B50 U110 BUW57 ES1010 KT 117
Contextual Info: BUY 57 BUY 58 BUY 73 D re ifa c h d iffu n d ie rte N P N -S iliziu m Leistungstransistoren BUY 57, BUY 58 und BUY 73 sind dreifach-diffundierte NPN-Silizium-Leistungstransistoren im Gehäuse 3 A2 DIN 41 872 T O -3 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden.

Contextual Info: _/V_ BDV92 BDV94 BDV96 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P epitaxial base power transistors in the plastic SOT-93 envelope. These transistors are intended for use in audio output stages and general amplifier and switching applications.

Contextual Info: NPN Silicon Switching Transistors • • • BSS 79 BSS 81 High DC current gain Low collector-emitter saturation voltage Complementary types: B S S 80, B S S 82 PNP Type BSS BSS BSS BSS 79 79 81 81 B C B C Marking Ordering code for versions in bulk Ordering code for