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    702 TRANSISTOR Search Results

    702 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy
    54F573FM/B
    Rochester Electronics LLC 54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, PDF Buy

    702 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ic 701

    Abstract: ic 701 fairchild 702 transistor 701 transistor mje700 TRansistor 701
    Contextual Info: MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 TO-126 1 1 . Emitter 2. Collector 3. Base PNP Epitaxial Silicon Darlington Transistor


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    MJE700/701/702/703 MJE800/801/802/803 O-126 MJE700/701 MJE702/703 ic 701 ic 701 fairchild 702 transistor 701 transistor mje700 TRansistor 701 PDF

    GP 704

    Abstract: b09 n03 transistor
    Contextual Info: Blackfin+ Core Embedded Processor Preliminary Technical Data ADSP-BF700/701/702/703/704/705/706/707 FEATURES MEMORY Blackfin+ core with up to 400 MHz performance Dual 16-bit or single 32-bit MAC support per cycle 16-bit complex MAC and many other instruction set


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    ADSP-BF700/701/702/703/704/705/706/707 16-bit 32-bit 88-Lead 184-Ball 136KB BC-184-1 GP 704 b09 n03 transistor PDF

    2N7002 MARKING 712

    Abstract: 2N7002 800mA SOT-23 Marking code MU
    Contextual Info: Supertex inc. 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for TO-236AB: BVoss / BVoos R d S<ON ' d ON) (max) (min) TO-236AB* 702* 60V 7.5Q 0.5A 2N7002 where * = 2-week alpha date code “Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.


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    2N7002 O-236AB* O-236AB: OT-23. 2N7002 MARKING 712 2N7002 800mA SOT-23 Marking code MU PDF

    EL 14v 4c

    Abstract: z06m Q62702-D98 transistor 1B transistor 7g BDY39 Transistor bdy 11
    Contextual Info: N P N -T ran sisto r fü r leistungsstarke N F -E ndstufen BDY 39 BDY 39 ist ein einfachdiffundierter NPN -Silizium -Transistor im Gehäuse 3 A 2 DIN 41 872 ähnlich T O -3 . Der Kollektor ¡st m it dem Gehäuse elektrisch verbunden. Der Transistor ist besonders für den Einsatz in leistungsstarken NF-Endstufen und in stabilisierten Netzgeräten


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    Q62702-D98-V1 Q62702-D98-V2 Q62702-D98 Q62901-B11â Q62901-B EL 14v 4c z06m transistor 1B transistor 7g BDY39 Transistor bdy 11 PDF

    JE802

    Abstract: MJE802 transistor tic 701 MJE800 MJE101 transistor mje802 MJE801 MJE803 MJE702 MJE703
    Contextual Info: MJE700thru MJE703 PNP/MJE800 thru MJE803 NPN continued E L E C T R IC A L C H A R A C T E R IS T IC S (T q = 25°C unless otherwise noted) | Characteristic O F F C H A R A C T E R IS T IC S Collector-Emitter Breakdown VoltageM) (1C * 50 m Adc , \ q « 0)


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    MJE700thru MJE703 PNP/MJE800 MJE803 MJE700, MJE701, MJE800. MJE801 MJE702, MJE703, JE802 MJE802 transistor tic 701 MJE800 MJE101 transistor mje802 MJE702 PDF

    Contextual Info: Transistors IC MOSFET SMD Type Product specification 2N7002T SOT-523 Unit: mm +0.1 1.6-0.1 • Features +0.1 -0.1 1.0 +0.05 0.2-0.05 +0.01 0.1-0.01 1 +0.15 1.6-0.15 +0.05 0.8-0.05 2 ● Low Gate Threshold Voltage 0.55 ● Low On-Resistance ● Low Input Capacitance


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    2N7002T OT-523 PDF

    digital transistor array

    Abstract: marking 702 sot363
    Contextual Info: SIEMENS BCR 169S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistor (R1=4.7kQ) Cl U 12 FI FI FI U lii ÜJ Type Marking Ordering Code Pin Configuration


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    OT-363 digital transistor array marking 702 sot363 PDF

    702 TRANSISTOR smd

    Abstract: 702 TRANSISTOR smd SOT23 70.2 TRANSISTOR smd 702 5 TRANSISTOR smd DIODE smd marking 702 smd transistor 702
    Contextual Info: MOSFET SMD Type N-Channel Enhanceent Mode Field Effect Transistor 2N7002K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low Gate Threshold Voltage 0.4 3 Low On-Resistance: RDS ON 1 Fast Switching Speed 0.55 Low Input Capacitance


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    2N7002K OT-23 702 TRANSISTOR smd 702 TRANSISTOR smd SOT23 70.2 TRANSISTOR smd 702 5 TRANSISTOR smd DIODE smd marking 702 smd transistor 702 PDF

    Contextual Info: Continental Device India Limited  An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP DARLIGNTON POWER SILICON TRANSISTORS EC BD676, 676A BD678, 678A BD680, 680A BD682, 684 TO126 Plastic Package B For Use As Output Devices In Complementary General Purpose Amplifier Applications.


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    BD676, BD678, BD680, BD682, BD675, MJE700, BD676 BD678 BD680 PDF

    BUW58

    Abstract: leistungstransistoren Q62702 Q62901-B11-A Q62901-B50 U110 BUW57 ES1010 KT 117
    Contextual Info: BUY 57 BUY 58 BUY 73 D re ifa c h d iffu n d ie rte N P N -S iliziu m Leistungstransistoren BUY 57, BUY 58 und BUY 73 sind dreifach-diffundierte NPN-Silizium-Leistungstransistoren im Gehäuse 3 A2 DIN 41 872 T O -3 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden.


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    Q62702-U109 Q62702â Q62702-U124 Q62901-B11-A Q62901-B50 BUW58 leistungstransistoren Q62702 Q62901-B11-A Q62901-B50 U110 BUW57 ES1010 KT 117 PDF

    Varistor 7D 471K

    Abstract: 14d 431K varistor transistor TPV 3100 14d 151K varistor 10d 471k 431K20D 7d 241k 14n 221k VARISTOR MVR 14D 391K
    Contextual Info: MVR Series Metal Oxide Varistors Description MERITEK FEATURES • • • • Fast response to rapidly rising surge voltage High performance clamping voltage characteristics Operating / storage temperature: -40 ~ +85°C / -40 ~ +125°C Varistor voltage: 18V to 1800 V


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    UL1449 E222955 UL1414 E197475 E326004 40D/R 34S/R Varistor 7D 471K 14d 431K varistor transistor TPV 3100 14d 151K varistor 10d 471k 431K20D 7d 241k 14n 221k VARISTOR MVR 14D 391K PDF

    c380 NPN transistor

    Abstract: transistor c380 c380 transistor c380 C379 BCW73 Q62702-C383-V1 48v to 24v buck c380 pnp Q62702-C383
    Contextual Info: NPIM-Silizium-Transistoren BCW BCW - BCW BCW 73 74 77 78 BCW 73, BCW 74, BCW 77 und BCW 78 sind epitaktische NPN -Silizium -Planar-Transistoren. Der Kollektor ist m it dem Gehäuse elektrisch verbunden. Die Transistoren eignen sich als


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    Q62702- -C379- Q62702-C383-V1 BCW73- BCW77- Q62702-C383â c380 NPN transistor transistor c380 c380 transistor c380 C379 BCW73 Q62702-C383-V1 48v to 24v buck c380 pnp Q62702-C383 PDF

    GE5060

    Abstract: tf 115 250v 15a tf 115 250v 2a GE5061 GE5062 GE-5060
    Contextual Info: HIGH SPEED GE5060,1,2 NPN POWER DARLINGTON TRANSISTORS 400-500 VOLTS 20 AMP, 125 WATTS These devices are designed for use in high speed switching applications, such as off-line switching power supplies, AC & DC motor control, UPS systems, ultrasonic equipment and


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    GE5060 T0-204AA 0225I572| GE5061 GE5062 GE623I, tf 115 250v 15a tf 115 250v 2a GE-5060 PDF

    Contextual Info: Preliminary 1011GN-700ELM Rev 2 1011GN-700ELM 700 Watts – 70% Efficiency Mode-S ELM, Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1011GN-700ELM is a common source, class AB, GaN on SiC HEMT power transistor specifically designed for Mode-S ELM Applications. It is


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    1011GN-700ELM 1011GN-700ELM 55-KR 55-KR PDF

    ZVN4206E

    Abstract: Small Signal MOSFETs FMMT4401 ZVN3320F B558 BSS66 BSS67 BSS79B ZVP2106 FMMT2222
    Contextual Info: SOT-23 TRANSISTORS & DIODES SWITCHING TRANSISTORS NPN V cbo Volts Type BSS79B 75 75 B SS79C FMM T2222A 75 FMMT4400 60 60 FMMT4401 60 BSS66 BSS67 60 60 FMMT3903 FMMT3904 60 60 FMMT2222 40 FMMT4123 FMM T4124 30 FMMT2369A 40 40 FMMT2369 BSV52 20 VcEO Volts


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    OT-23 BSS79B BSS79C FMMT2222A FMMT4400 FMMT4401 BSS66 BSS67 FMMT3903 FMMT3904 ZVN4206E Small Signal MOSFETs ZVN3320F B558 ZVP2106 FMMT2222 PDF

    nec 2741

    Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.


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    2SC4226 2SC4226 SC-70 2SC4226-T1 nec 2741 2SC4226 datasheet 2SC4226-T1 2SC4226-T2 PDF

    Contextual Info: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details LS-9519L Product Details Quick Links Military/Aerospace High Performance Relays


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    LS-9519L LS-9519L PDF

    Contextual Info: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details LS-9514L Product Details Military/Aerospace High Performance Relays


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    LS-9514L LS-9514L PDF

    Contextual Info: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details LS-9520L Product Details Military/Aerospace High Performance Relays


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    LS-9520L LS-9520L PDF

    RCA 40411 transistor

    Abstract: audio amplifier with rca 40411 transistor RCA 383 rca 40411 40411 transistor RCA Power Transistor 40411 RCA 40250 RCA 40250 transistor Transistor rca 40250 RCA transistor 40411
    Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 MHz . . . Ir to 60 A . . . P r to 140 W ic • 1 A HIM. P f ■ 5 W max. TO-39 * le * - 1 A MX. P j « 7 W max. (T O - » ) • ic ■ 2 A max. P j “ 10 f t max. (TO-39) ft 30 x 30* 30x30 2N2102 (N-P-N]


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    ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 RCA 40411 transistor audio amplifier with rca 40411 transistor RCA 383 rca 40411 40411 transistor RCA Power Transistor 40411 RCA 40250 RCA 40250 transistor Transistor rca 40250 RCA transistor 40411 PDF

    marking R24

    Abstract: 2sc4226 nec 2741 MARKING 702 6pin ic
    Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA801T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 ELEMENTS MINI MOLD The µPA801T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS (Unit: mm)


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    PA801T PA801T marking R24 2sc4226 nec 2741 MARKING 702 6pin ic PDF

    TD-2411

    Abstract: NEC 3552 2SC5011 2SC5011-T1 2SC5011-T2 702 mini transistor P1039 1357 transistor NEC
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters PART NUMBER QUANTITY 2SC5011-T1 3 Kpcs/Reel.


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    2SC5011 2SC5011-T1 2SC5011-T2 TD-2411 NEC 3552 2SC5011 2SC5011-T1 2SC5011-T2 702 mini transistor P1039 1357 transistor NEC PDF

    Contextual Info: 25Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 25 Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.


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    SERI751KD25 781KD25 821KD25 911KD25 102KD25 112KD25 122KD25 142KD25 162KD25 PDF

    431k varistor

    Abstract: 14n 431K varistor
    Contextual Info: 25M E,N TMOV SERIES DATA SHEET METAL OXIDE VARISTOR – TMOV SERIES FEATURE TMOV integrated thermal protection device High peak surge current rating up to 15KA Designed to facilitate compliance to UL1449 for TVSS products Wide operating voltage (V1mA) range from 150V to 1200V.


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    UL1449 J-STD-020 elect505 681KM 751KM 781KM 821KM 911KM 102KM 112KM 431k varistor 14n 431K varistor PDF