70 M 15 B Search Results

45 M 7.5 B

Abstract: UM-13 UM1-3
Contextual Info: Filters Monolithic crystal filters Type 45 M 7.5 A 45 M 7.5 B 45 M 20 A 45 M 20 B 45 U 20 B 45 M 32 A 45 M 32 B 70 M 15 A 70 M 15 B 70 M 20 A 70 M 20 B 70 U 20 A 90 M 20 A 90 M 20 B 45 R 15 C 45 M 15 A 45 M 15 A9 45 R 15 A 45 S 15 A 45 M 15 B 45 R 15 B 45 S 15 B

UPD27C256AK-15

Abstract: 27128 nec 27C256 uPD27C256AD-20 UPD27C256AG-20 UPD27C256AK-12 UPD27C256AK-20
Contextual Info: - - 27C256 m UPD27C256AD-20 UPD27C256AG-15 UPD27C256AG-20 UPD27C256AK-12 uPD27C256AK-15 UPD27C256AK-20 UPD27C256D-15 £ tt £ NEC NEC NEC NEC NEC NEC NEC &SSÌSI OC 0— 70 0-70 0— 70 0— 70 0-70 0— 70 X 4 •/ 7 * TAAC TCAC T O H TO E T O D max max max max max

29C101

Abstract: 32PIN HN29C101P-12 HN29C101P-15 HN29C101P-20 HN29C101R-15 HN29C101R-20 HN29C101T-15 Hitachi Scans-001
Contextual Info: - 160 - 2 9C 10 1 X 4 m. * í± £ i& s & m "O HN29C10IP-12 HN29CÎOIP-15 HN29C101P-20 HN29C10IR-12 HN29C101R-15 HN29C101R-20 HN29C101T-12 HN29C101T-15 HN29C101T-20 HÍTACHÍ HITACHI HITACHI HITACHI HITACHI HITACHI HITACHI HITACHI HITACHI 0— 70 0— 70

molex terminal block 10 position

Contextual Info: 10 39170 92.4 15 POSITION SHOWN NO. OF DIM. M A T E R IA L CIRCUITS "A" N UM BER S E E NOTE 4 09 39.4 [1.55] 391 70 -2 10 9 15 54.4 [2.14] 39170-2115 25 79.8 [3.14] 391 70 -2 12 5 37 106.4 [4.19] 391 70 -2 13 7 NOTES: 1. M A T E R I A L : S E E 3. M A T E S

HM6264ALP-10

Abstract: STATIC RAM 6264 FCB61C65-70 HM6264AP-15 HY6264 RAM HY62C64-55 HY62C64-70 DPS9264-120 DPS9264-150 DS1225AB-15
Contextual Info: - 86 - m DPS9264-120 DPS9264-150 DS1225AB-15 DS1225AB-20 DS1225AD-15 DS1225AD-2G DS1225Y-15 DS1225Y-20 EDI8810H-100 EDI8810H-120 EDI8810IM50 EDI8810H-55 EDI8810H-70 EDI8810H-85 EDI8810L-Î00 ED18810L-120 EDI8810L-150 EDI8810L'55 EDI8810L-70 EDI88101.-85 FCB61C65'45

bando transformer

Abstract: bando power transformer CS270M cushcraft r6000 A2706 13B2N A14810S A270-10S RIGS AR450
Contextual Info: Amateur Radio ANTENNAS NEW FOR 99 MA5B 10, 12, 15, 17, 20 m Multiband HF Beam.5 A627013S 6 m, 2 m & 70 cm Directional Yagi.7 AR6270B 6 m, 2 m & 70 cm Vertical Antenna.7 Visit our web site at http://www.cushcraft.com See back cover for web features

Contextual Info: CO M ’L : -15/20 M IL :-20 MACH230-15/20 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 84 Pins 70 Inputs ■ 128 M acrocells 64 Outputs ■ 15 n stpD Com m ercial 128 Flip-flops; 4 clock choices 20 ns tPD M ilitary

MA717

Abstract: MA723 ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713
Contextual Info: - Ä fií H SSlOl HS S 1 0 2 H SU88 H SU276 MA2S728 MA2S784 MA4S713 M A 700 MA700A MA 704 MA704A MA704WA MA704WK M A 707 M A 713 MA714 M A 715 M A 716 M A 717 MA717WA £ tt Vr V (V) 30 30 70 10 3 30 30 30 15 30 15 30 30 15 30 15 30 B aL B ÍL B Ä B Ä fôT

610A

Abstract: MA723 ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713
Contextual Info: - Ä fií H SSlOl HS S 1 0 2 H SU88 H SU276 MA2S728 MA2S784 MA4S713 M A 700 MA700A MA 704 MA704A MA704WA MA704WK M A 707 M A 713 MA714 M A 715 M A 716 M A 717 MA717WA £ tt Vr V (V) 30 30 70 10 3 30 30 30 15 30 15 30 30 15 30 15 30 B aL B ÍL B Ä B Ä fôT

40j2

Abstract: B8117805A-70
Contextual Info: DRAM 3 • DRAM - Normal Voltage Versions (CMOS) Vcc= +5V±10%, T a=0°C to +70°C Organization (Wxb) 4M x4 2M x8 1M x16 Part Number Cycle Time min. (ns) Power Consumption max. (mW) Operating M B8116400A-60 60[15]*1 110[40]*3 412.5 M B8116400A-70 70[17]’1

2N7104

Abstract: 2N7116 2N7106 2N7105 2N7108 SD5400 SST211
Contextual Info: SILICONIX INC lêE D • Ö2S473S 4 ■ 2N7104 SERIES S ilico n ix incorporated N-Channel Lateral D M O S FETs V BR DS M AX (V) rds(ON) M AX (fl) C rss M AX (pF) 2N7104 2N7106 20 10 70 70 0.5 0.5 2 2 2N7108 15 70 0.5 2 PART NUMBER TO-72 For additional design information please see

MJ15024 MJ15025

Abstract: 2n3055 MJ15003 2N3055H MOTOROLA MJ15003 Motorola MJ15024-MJ15025 2N5629 MOTOROLA MJ15003 MJ15004 2N3772 motorola 2N3055H 2N3773 MOTOROLA
Contextual Info: POWER TRANSISTORS — BIPOLAR METAL continued TO-2Q4AA (FORMERLY TO-3) (continued) R esistive S w itching lcCont VcEO (sus) Am ps Max V oljs Min 15 60 NPN ^FE PNP 2N3055H 2N3055 2N3055A UJ2955 MJ2955A lc (n M in/M ax Amp 20/70 20/70 20/70 4 4 4 ts tf MS

Contextual Info: 70 M Hz Bandpass Filter 1.228 M Hz Bandwdith Part Number 855107 D at a S heet T y p ic a l P e r f o r m a n c e Parameter Center Frequency S p e c if ic a t io n s Unit Minimum MHz - 70.75 70.6 25 20 15 10 5 -5 -10 -15 -20 -25 70.45 70.3 70.15 70 69.85 Horizontal: 150 kHz/Div

tl074 tl084

Abstract: tl084 national TL084 LF347 LF347B H13V tl074
Contextual Info: - 232 LF347/B National Semiconductor m & , M M , JFETA • ft A £ t§ h :1 3 V /ji;s V s=±15V Ta=25°C •G B # ': 4MHz •iBS t.7.2mA • A ^ 'M ± 18 ±18 ^»A ^® ± ±15 ± 30 0— +70 ± 15 ±30 0 —+70 / / s * If IS ^ XI:TLQ74/TLQS4 Aij37fe-i>m tS:

Contextual Info: S IE M E N S 4M X 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 ”C operating temperature • Performance: -50 -60 -70 ÍRAC R A S access time 50 60 70 *CAC C A S access time 13 15 20

M5M482128

Abstract: HM538121JP-10 HM538122-10 HM538123-10 M5M482128J-8
Contextual Info: - 380 - 1M 1 2 8 K X 8 (o o # ) 1 HM538121JP-10,-12,-15 HM538122-10.-12.-15 HM538123-10.-12.-15 ^PD42275LE-80,-10,-12 HiC H it a it NEC / — t) 128KW x 8 bit t f - 1 - * * (R A M / S A M ) M5M482128J-8, -10,-12 - - - «- - - X X 40lmax) - - X X 70-, 60, 50/120, 100, 80,m„,

M5M416400C

Contextual Info: M ITSU BISHI LSIs P , * 2 ‘£ s " e" M * x * 5 M 4 1 6 4 0 0 C J , T DESCRIPTION PIN CONFIGURATION TOP VIEW vcc [T O FEATURES M5M416400CXX*6,-6S M5M416400CXX-7.-7S 50 60 70 13 15 20 25 30 35 Power dissipa­ tion (min.ns) (typ.mW) Cycle time 13 15 90 110

40636

Abstract: 2N3265 40321 40327 40363 150w class ab audio amplifier 40346 2N3055 2n3055 audio 200W AUDIO AMP
Contextual Info: 2N3055 F A M ILY [n-p-n] silicon f f = 0.8 MHz min; Py up to 150 W max 1 15-W Hom etaxial-Base, General Purpose 1 15-W Hom etaxial-Base, General Purpose 150-W Hom etaxial-Base, General Purpose 4 0-V , 1 17-W Hom etaxial-Base 45 60 80 40 55 70 85 45 _ 70

ofw3

Abstract: 2097152-BIT
Contextual Info: IVSTS'JBISHI L S Is STATIC RAM S R A M M O D U L E 25 6K X 8 BIT Max. Access Type name Load memory time Outward dimensions Data sheet W x H x D (mm) page (ns) MH25608S1N-70 ★ 70 MH25608S1N-85 85 MH25608S1N-10 100 MH25608S1N-12 120 MH25608S1N-15 150 M 5M 5256B FP x 8

Contextual Info: DRAM 6 • DRAM - Low Voltage Versions (CMOS) Vcc= +3.3V±0.3V, T a=0°C Organization (Wxb) Access Time max. (ns) Part Number Power Consumption max. (mW) Cycle Time min. (ns) M B81V 16 160 A -60 60[15]*1 1 10[40]"3 324 M B81V 16 160 A -70 70(17]*1 130[45]*3

2SD1557

Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
Contextual Info: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m

Contextual Info: M 1:1 (7 x 10)=70 15 15 10 40 10 100  Schutzvermerk gemäß DIN ISO 16016 beachten Fischer Elektronik GmbH & Co. KG 2006 Freimasstoleranz Oberfläche DIN EN 12020 nach Angabe Datum Erst. 13.07.2006 Bearb. 09.08.2006 Werkstoff / Material AlMgSi0,5 F22

Contextual Info: Advanced Technical Information HiPerFET Power M OSFETs Single Die M OSFET IXFN 280N07 VDSS ^D25 D DS on 'r r N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Tj = 25°Cto150°C 70 V T,J = 25 °C to 15 0 °C ;’ R~. = 1 M fl öS 70

TC5565PL-15L

Abstract: TC5588P TC5565PL15 NEC150 tc5565pl-15 tc5565pl UM6264-10L UM6264-12 NEC 200 V62C64-10
Contextual Info: - 6 4 K 'f a m f± £ % CC TAAC TCAC T O E max max max ns) (ns) (ns) TC5565PL-151 TOSHIBA 0— 70 150 TC5588P/J-2Û TC5588P/J-25 TOSHIBA TOSHIBA 20 25 20 25 TC5588P/J-35 TMS6264L-12 TMS6264L-15 TOSHIBA 0— 70 0 —'70 0— 70 35 35 TI TI 0— 70 0— 70