7.1 SOT323 Search Results
7.1 SOT323 Datasheets Context Search
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sot323-6l
Abstract: SOT323-6 0113B
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OT323-6L OT323-6L 575in) 098in) sot323-6l SOT323-6 0113B | |
SOT323-5L
Abstract: 0113B SOT323
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OT323-5L OT323-5L 575in) 098in) SOT323-5L 0113B SOT323 | |
sot323
Abstract: 0113B
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OT323-8L OT323-8L 575in) 098in) sot323 0113B | |
Contextual Info: STLQ50XX 50 mA, 3 µA supply current low drop linear regulator Features • 2.3 V to 12 V input voltage range ■ 50 mA maximum output current ■ 3 µA quiescent current ■ Available in 1.8 V, 2.5 V, 3.3 V, 5.0 V and adjustable SOT323-5L ■ 200 mV dropout voltage at 25 mA output |
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STLQ50XX OT323-5L OT323-5L OT235L STLQ50 | |
RESISTOR BF 0207
Abstract: STLQ50 STLQ50C50R
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STLQ50XX OT323-5L OT323-5L OT235L STLQ50 RESISTOR BF 0207 STLQ50C50R | |
SOT323-5L
Abstract: STLQ50 STLQ50M25R STLQ50ADJ STLQ50M50R sot323xl 709 SOT23 OUTPUT 3.3V PACKAGE SOT323
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STLQ50XX OT323-5L OT323-5L OT235L STLQ50 OT323-xL SOT323-5L STLQ50M25R STLQ50ADJ STLQ50M50R sot323xl 709 SOT23 OUTPUT 3.3V PACKAGE SOT323 | |
SOT323-5L
Abstract: STLQ50 STLQ50XX25 sot323xl
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STLQ50XX OT323-5L OT323-5L OT235L STLQ50 OT323-xL SOT323-5L STLQ50XX25 sot323xl | |
Contextual Info: STLQ50 50 mA, 3 A supply current low drop linear regulator Datasheet - production data The PMOS pass element allows very good dropout values 200 mV at 25 mA IO and 350 mV at full load without affecting the consumption characteristics. Housed in the very small SOT323-5L, it meets |
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STLQ50 OT323-5L, OT323-5L STLQ50C18R STLQ50C25R STLQ50C33R STLQ50C50R STLQ50C-R DocID13205 | |
Contextual Info: BSH121 N-channel enhancement mode field-effect transistor Rev. 01 — 14 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSH121 in SOT323. |
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BSH121 BSH121 OT323. OT323, | |
BSH121Contextual Info: BSH121 N-channel enhancement mode field-effect transistor Rev. 01 — 14 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSH121 in SOT323. |
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BSH121 BSH121 OT323. OT323, OT323 | |
SDU3055L2
Abstract: STU9916L SDM8401 STM820 stu6025nl STU3525NL 635-75 STU2040PL SDP55N03L STM9435
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SDM4410 STM4410A SDM4800 STM4800A SDM40N02 SDM4884 STM4884A STM7821 STM7822 STM7822A SDU3055L2 STU9916L SDM8401 STM820 stu6025nl STU3525NL 635-75 STU2040PL SDP55N03L STM9435 | |
stu407d
Abstract: STU432S STU419S stm8309 STU432 STM6930A STM6922 STU426S STU3525NL stu309dh
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STF8220 STA6610 STA6620 STA6968 STM9926 STM4884A STM4410A SDM4410 STM480-40 stu407d STU432S STU419S stm8309 STU432 STM6930A STM6922 STU426S STU3525NL stu309dh | |
Contextual Info: STLQ50 50mA, 3µA Supply current low drop linear regulator Features • 2.3V to 12V Input voltage range ■ 50mA Maximum output current ■ 3µA Quiescent current ■ Available in 1.8 V, 2.5 V, 3.3V, 5.0V and adjustable ■ 200mV Dropout voltage at 25mA output current |
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STLQ50 200mV OT323-5L OT23-5L 350mV OT235L, OT23-5L | |
Contextual Info: STLQ50xx 50 mA, 3 µA supply current low drop linear regulator Datasheet − production data Features • 2.3 V to 12 V input voltage range ■ 50 mA maximum output current ■ 3 µA quiescent current ■ Available in 1.8 V, 2.5 V, 3.3 V, 5.0 V and adjustable voltage |
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STLQ50xx OT323-5L OT235L OT23-5L STLQ50xx | |
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Contextual Info: BBY 57-05W 3 Silicon Tuning Diode Excellent linearity High Q hyperabrupt tuning diode 2 Low series inductance High capacitance ratio 1 Designed for low tuning voltage operation VSO05561 for VCO's in mobile communications equipment For control elements such as TCXOs and VCXOs |
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7-05W VSO05561 EHA07179 OT-323 Feb-19-2001 | |
BBY57-05W
Abstract: VSO05561
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BBY57-05W VSO05561 EHA07179 OT323 Jul-26-2001 BBY57-05W VSO05561 | |
A2 diode
Abstract: marking c2 diode VSO05561
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7-05W VSO05561 EHA07179 OT-323 May-20-1999 A2 diode marking c2 diode VSO05561 | |
Contextual Info: BBY 57-05W Silicon Tuning Diode Preliminary data 3 • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • High capacitance ratio 2 • Designed for low tuning voltage operation 1 for VCO’s in mobile communications equipment |
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7-05W VSO05561 EHA07179 Q62702-B933 OT-323 | |
Philips FA 261Contextual Info: Philips Semiconductors N bbS B IB l AMER 0 0 2 5 TtiT M A P X PH ILIP S /D IS C R E TE Product specification b?E D NPN 9 GHz wideband transistor FEATURES BFS505 PIN CONFIGURATION PINNING PIN DESCRIPTION • Low current consumption • High power gain • |
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BFS505 OT323 MBC87I0 OT323. OT323 Philips FA 261 | |
74LX1G04
Abstract: 74LX1G04CTR 74LX1G04BJR SOT323-5 74LX1G04STR SOT323-5L reflow
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74LX1G04 74LX1G04 74LX1G04CTR 74LX1G04BJR SOT323-5 74LX1G04STR SOT323-5L reflow | |
STTH2004S
Abstract: stth20p03 stth30p03s stth1004s stth20p035 STTH1004 stth2004 stth20p035sfp STTH30P03SW STTH
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DO-41, DO-15, DO-201 O-220AC O-220I O-220AB O-220FPAB O-247 DO-247 BRECT0408 STTH2004S stth20p03 stth30p03s stth1004s stth20p035 STTH1004 stth2004 stth20p035sfp STTH30P03SW STTH | |
Contextual Info: SMD ESD Protection Diode CPDV3-5V0U RoHS Device Features SOT-323 -IEC61000-4-2 8kV Contact , 15kV(air). -Surface mount package. 0.087(2.20) 0.079(2.00) -High component density. 3 Mechanical data 0.053(1.35) 0.045(1.15) 1 -Case: SOT-323 Standard package, molded |
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OT-323 -IEC61000-4-2 OT-323 STD-750D, QW-BP009 | |
Philips FA 564Contextual Info: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT93W uses the same crystal as the SOT23 version, BFT93. • Gold metallization ensures |
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BFT93W OT323 BFT93W BFT93. MBC870 OT323. 711002b. Philips FA 564 | |
Contextual Info: SMD ESD Protection Diode CPDV3-5V0U RoHS Device Features SOT-323 -IEC61000-4-2 Level 4 ESD protection. -Surface mount package. 0.087 2.20 0.079(2.00) -High component density. 3 Mechanical data 0.053(1.35) 0.045(1.15) 1 -Case: SOT-323 Standard package, molded plastic. |
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OT-323 -IEC61000-4-2 OT-323 MIL-STD-750, QW-BP009 |