7 TO 128 DECODER Search Results

Contextual Info: CY62136ESL MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A

Contextual Info: CY62136ESL MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A

Contextual Info: CY62136ESL MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A

Contextual Info: CY62136ESL MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A

Contextual Info: CY62136ESL MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A

Contextual Info: CY62136ESL MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A

Contextual Info: S-2922AIF10 IL11 * C-MOS 2K 128x16 -BIT SERIAL EEPROM - TOP VIEW 5 1 NC 8 TEST IN 4 2 VDD GND 7 3 DI DO 6 SK CS TEST CS IN 3 6 DO OUT SK IN 4 5 DI IN 8 NOTE OPERATION READ WRITE VDD +1.8 to +6.5 V +2.7 to +6.5 V MEMORY ARRAY 128 X 16 BITS DATA REGISTER

SN74S262N

Abstract: video character generator circuit diagram character generator TEXAS TELETEXT texas instruments teletext decoder XM-11 280NS texas instruments teletext
Contextual Info: SN74S262N ROW OUTPUT CHARACTER GENERATOR features High speed - 280ns character access time Lower power — 250mW Static operation 5760 bit capacity 128 characters of 45 bits 5x9 7 input character decoder 4 input row decoder Character format chosen to allow rounding on all characters

ST7687S-G4-3

Abstract: COM126 COM127 fm 4213 ic ST7687S
Contextual Info: ST7687S 128RGB x 128 dot 65K Color with Frame Memory Single-Chip STN Controller/Driver Datasheet Version 1.6 2010/02 Sitronix Technology Corp. reserves the right to change the contents in this document without prior notice. ST7687S 1. 2. 3. 4. 5. 6. 7. 8.

OM117

Abstract: 1.5 128x128 CSTN LCD ge 3378 128x128 cstn 398825 cog lcm 116 niv5 1.5 128 CSTN LCD 128x128 lcd 4k colour OM113
Contextual Info: HIGH-VOLTAGE MIXED-SIGNAL IC 128 x 128RGB C-STN LCD Controller-Driver w/ 16-bit per RGB On-Chip SRAM ES Specifications Revision 0.6 February 7, 2007 ULTRACHIP The Coolest LCD Drive, Ever!! Specifications and information herein are subject to change without notice.

Contextual Info: a Advanced Micro Devices A m 2 7 C 1 2 8 128 Kilobit 16,384 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time Latch-up protected to 100 mA from -1 V to Vcc +1 V — 45 ns High noise immunity ■ Low power consumption Versatile features for simple interfacing

Contextual Info: PCF8531 34 x 128 pixel matrix driver Rev. 7 — 12 December 2013 Product data sheet 1. General description The PCF8531 is a low-power CMOS1 LCD row and column driver, designed to drive dot matrix graphic displays at multiplex rates of 1:17, 1:26, and 1:34. Furthermore, it can drive

2764 EPROM specification

Abstract: 27128 prom st 27128
Contextual Info: eeeo 2764 64K EPROM 27128 128K EPROM N ovem ber 1989 Pin Configuration Features • Fast Access Times at 0° to 70°C •2764 -1 6 0 ns ■ 2 7 128-2 0 0 ns ■ Programmed Using Intelligent Algorithm • 21 V VFP •2 Minutes for 27128 •1 Minute for 2764

Contextual Info: MN101E03G Type MN101E03G [ES Engineering sample available ] ROM (x× 16-bit) 128 K RAM (×× 16-bit) 4K Package QFP084-P-1818E *Lead-free Minimum Instruction Execution Time M Di ain sc te on na tin nc ue e/ d 100 ns (at 3.135 V to 3.465 V, normal-mode) External (7 lines)

MN101E03G

Abstract: MN101EF03G QFP084-P-1818E
Contextual Info: MN101E03G Type MN101E03G [ES Engineering sample available ] ROM (x× 16-bit) 128 K RAM (×× 16-bit) 4K Package QFP084-P-1818E *Lead-free Minimum Instruction Execution Time M Di ain sc te on na tin nc ue e/ d 100 ns (at 3.135 V to 3.465 V, normal-mode) External (7 lines)

HA1325

Contextual Info: FINAL AMDZ1 A m 2 7 C 1 28 128 Kilobit 16 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ High noise immunity — Speed options as fast as 45 ns ■ Low power consumption ■ Versatile features for simple interfacing

Contextual Info: MN101E02G Type MN101E02G [ES Engineering sample available ] ROM (x× 16-bit) 128 K RAM (×× 16-bit) 18 K Package QFP084-P-1818E *Lead-free Minimum Instruction Execution Time 100 ns (at 3.135 V to 3.465 V, normal-mode) External (7 lines) Internal (15 lines) : Timer × 4, A/D × 1, RESET × 1, OSD × 1, Serial × 2, Teletext decoder × 2,

Contextual Info: MN101E13G Type MN101E13G ROM x× 16-bit 128 K RAM (×× 16-bit) 4K Package QFP084-P-1818E *Lead-free Minimum Instruction Execution Time 100 ns (at 3.135 V to 3.465 V, normal-mode) Interrupts External (7 lines) Internal (13 lines) : Timer × 4, A/D × 1, RESET × 1, OSD × 1, Serial × 2,

Contextual Info: MN101E13G Type MN101E13G ROM x× 16-bit 128 K RAM (×× 16-bit) 4K Package QFP084-P-1818E *Lead-free Minimum Instruction Execution Time 100 ns (at 3.135 V to 3.465 V, normal-mode) Interrupts External (7 lines) Internal (13 lines) : Timer × 4, A/D × 1, RESET × 1, OSD × 1, Serial × 2,

MN101E13G

Abstract: MN101EF13G QFP084-P-1818E
Contextual Info: MN101E13G Type MN101E13G ROM x× 16-bit 128 K RAM (×× 16-bit) 4K Package QFP084-P-1818E *Lead-free Minimum Instruction Execution Time 100 ns (at 3.135 V to 3.465 V, normal-mode) Interrupts External (7 lines) Internal (13 lines) : Timer × 4, A/D × 1, RESET × 1, OSD × 1, Serial × 2,

D431000AGZ

Abstract: d431000a UPD431OOOAGZ-7OLL-KKH d431232 d431000ag D431000 ypd431000a D4310 d431000all 031T
Contextual Info: Low Power SRAM 7 DATA SHEET NEC MOS INTEGRATED CIRCUIT ~PD431000A 1 M-BIT CMOS STATIC RAM 128 K-WORD BY 8-BIT Description ThepPD431000A isa high speed,lowpower, and l,048,576bits 131,072 words x8 bits CMOS static RAM. The vPD431OOOA has two chip enable pins (CEI, CE2) to extend the capacity. And battery backup is

Contextual Info: MN101E02G Type MN101E02G [ES Engineering sample available ] ROM (x× 16-bit) 128 K RAM (×× 16-bit) 18 K Package QFP084-P-1818E *Lead-free Minimum Instruction Execution Time 100 ns (at 3.135 V to 3.465 V, normal-mode) Interrupts External (7 lines) Internal (15 lines) : Timer × 4, A/D × 1, RESET × 1, OSD × 1, Serial × 2, Teletext decoder × 2,

Contextual Info: MN101E04G Type MN101E04G under development ROM (x× 16-bit) 128 K RAM (×× 16-bit) 4K Package QFP084-P-1818E *Lead-free Minimum Instruction Execution Time 100 ns (at 3.135 V to 3.465 V, normal-mode) Interrupts External (7 lines) Internal (13 lines) : Timer × 4, A/D × 1, RESET × 1, OSD × 1, Serial × 2,

Contextual Info: MN101E03G Type MN101E03G [ES Engineering sample available ] ROM (x× 16-bit) 128 K RAM (×× 16-bit) 4K Package QFP084-P-1818E *Lead-free Minimum Instruction Execution Time 100 ns (at 3.135 V to 3.465 V, normal-mode) Interrupts External (7 lines) Internal (13 lines) : Timer × 4, A/D × 1, RESET × 1, OSD × 1, Serial × 2,