6V 33 DIODE Search Results

Contextual Info: CA3310, CA3310A 33 h a r m 's CMOS, 10-Bit, A/D Converters with Internal Track and Hold August 1997 Features • Description CMOS Low Power Typ . 15mW • Single Supply Voltage. 3V to 6V

zener DIODE A112

Abstract: tpo610l flame detector tokin 2N4391 MOTOROLA mbrs130lt data sheet nimh solar LTC1659 solar voltage regulator and battery charger circuit tpo610
Contextual Info: LinearTechnologyChronicle A Showcase of Linear Technology’s Focus Products December 1997 Product of the Month Step-Down DC/DC Converter Operates from Single Li-Ion Cell VIN 2.7V TO 6V + CIN† EFFICIENCY % 95 90 85 80 VIN = 3.5V L1 = 33µH VOUT = 2.5V

mevc

Abstract: 080L
Contextual Info: SENSITRON SEMICONDUCTOR SAF27N10-080L TECHNICAL DATA DATA SHEET 4272, REV. D RAD TOLERANT LOW RDS HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 100 Volt, 0.08 Ohm, 27A MOSFET • Characterized at VGS of 6V • Total Dose Characterized to 300 Krad • Single Event Effect Capability Equivalent to 33 MeV cm2/mg LET

HI155G1S02X

Abstract: HI155G1S14X HI155G1S07X
Contextual Info: Laser Diodes High Intensity Pulsed Laser Diodes 1550 HI-Series Features ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ High intensity output Low divergence 0.5 W/A efficiency Excellent temperature stability Hermetic and custom designed package High Reliability

Contextual Info: Laser Diodes High Intensity Pulsed Laser Diodes 1550 HI-Series Features ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ High intensity output Low divergence 0.5 W/A efficiency Excellent temperature stability Hermetic and custom designed package High Reliability

Contextual Info: Laser Diodes High Intensity Pulsed Laser Diodes 1550 HI-Series Features ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ High intensity output Low divergence 0.5 W/A efficiency Excellent temperature stability Hermetic and custom designed package High Reliability

6v 33 diode

Abstract: LTC5507ES6 diode schottky A28 LT5503
Contextual Info: LTC5507 100kHz to 1GHz RF Power Detector FEATURES • ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Temperature Compensated Internal Schottky Diode RF Detector Wide Input Power Range: –34dBm to 14dBm Ultra Wide Input Frequency Range: 100kHz to 1000MHz Buffered Output

DIODE RF DETECTOR

Abstract: LTC5507 LTZX audio envelope detector diode LTC5508 LTC1757A LTC1758 LTC1957 LTC4400 LT5503
Contextual Info: LTC5507 100kHz to 1GHz RF Power Detector U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Temperature Compensated Internal Schottky Diode RF Detector Wide Input Power Range: –34dBm to 14dBm Ultra Wide Input Frequency Range: 100kHz to 1000MHz Buffered Output

DIODE RF DETECTOR

Abstract: audio envelope detector diode PEAK DETECTOR LTC5507 MO-193 5507 pi metal detector metal detector schematic 28-22-16 envelope detector
Contextual Info: Final Electrical Specifications LTC5507 100kHz to 1GHz RF Power Detector May 2002 U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ Temperature Compensated Internal Schottky Diode RF Detector Wide Input Power Range: –34dBm to 14dBm Ultra Wide Input Frequency Range: 100kHz to

BATWING sop-16

Abstract: micro choke 820 uH 140 mA TTWB-2-B RF2320
Contextual Info: RF2320 LINEAR GENERAL PURPOSE AMPLIFIER Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description The RF2320 is a general purpose, low-cost, high-linearity

Contextual Info: RF2320 LINEAR GENERAL PURPOSE AMPLIFIER Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description The RF2320 is a general purpose, low-cost, high-linearity

Contextual Info: RF2320 LINEAR GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description

ST 12 55C

Abstract: C36V 55C 2v4
Contextual Info: DATA SHEET ZMM55-C2V4 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.4 to 47 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation .063(1.6) • Both normal and Pb free product are available :

DNA 1002

Abstract: rnx w16 dn5 marking packaging resistor MARKING W16 SOT23 rnx Q24 DN6 marking diode
Contextual Info: NETWORKS TECHNOLOGY OF TOMORROW RESISTORS / CAPACITORS / DIODES 3 2 THIN FILM ON SILICON TFOS INTEGRATED PASSIVE COMPONENTS KPC STRUCTURE 1 1 2 3 4 5 6 7 Die pad Silicon substrate Circuit Bonding pad Lead Mold resin Gold wire bonding 6 5 NETWORKS (PASSIVE COMPONENTS)

ADL65055SA2

Contextual Info: APC Laser Diode TM ADL-65055SA2 2007/03/07 Ver. 2.0 APC Laser Diode TM Perfect Solution For Auto Power Controlled Laser Diode By converting the external APC circuit board into an ASIC, we package the APC circuit into a traditional TO-can together with the laser chip. From now on, single package APC function

marking Z58

Abstract: z58 diode Zener 9v 201 zener diode sot23 ZX84C z58 zener diode zener diode zx 12 zener 8v diode MARKING z57 ZX84-B
Contextual Info: 300mW SOT-23 ZENER DIODES BZX84 SERIES Features S OT -23 Vz R ange 2.4 to 75V Power Dis s ipation 300mW .122 3.1 .110 (2.8) .016 (0.4) Top V iew .056 (1.43 ) .052 (1.33 ) 3 1 0.031 (0.8) 2 0.035 (0.9) 0.079 (2.0) .045 (1.15) .037 (0.95) .007 (0.175) .005 (0.125)

zener 14v diode

Contextual Info: High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5154S External Dimensions unit: mm ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use

Contextual Info: MSTC110 Thyristor/Diode Modules VRRM / VDRM 800 to 1600V ITAV 110Amp Applications „ „ „ „ Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Circuit MSTC 1 2 3 Features 6 7 „ „ „ 5 4 „ „ International standard package

Contextual Info: SCH2809 SCH2809 Features • • • Ordering number : ENA0446 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET SCH1305 and a Schottky barrier diode (SBS018) contained

Contextual Info: Ordering number : ENA0958A MCH6336 P-Channel Power MOSFET http://onsemi.com –12V, –5A, 43mΩ, Single MCPH6 Features • • Ultrahigh-speed switching Halogen free compliance • • 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C

102N30P

Contextual Info: Advanced Technical Information PolarHTTM HiPerFET IXFK 102N30P IXFN 102N30P Power MOSFET VDSS ID25 RDS on trr = = = ≤ 300 V 102 A Ω 33 mΩ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

IXTK120N25P

Contextual Info: IXTK120N25P PolarTM Power MOSFET VDSS ID25 = 250V = 120A Ω ≤ 24mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGSS VGSM Continuous

Contextual Info: MSTC160 Thyristor/Diode Modules VRRM / VDRM 800 to 1600V ITAV 160Amp Applications „ „ „ „ Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Circuit MSTC 1 2 3 Features 6 7 „ „ „ 5 4 „ „ International standard package

Contextual Info: MSTC130 Thyristor/Diode Modules VRRM / VDRM 800 to 1600V ITAV 130Amp Applications „ „ „ „ Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Circuit MSTC 1 2 3 Features 6 7 „ „ „ 5 4 „ „ International standard package