6T SRAM Search Results

AS6SA1288

Abstract: 32-PIN 32PIN
Contextual Info: August 2001 Advance Information AS6SA1288 2.7 - 5.5 V 128K x 8 Low Power CMOS SRAM Evolutionary Pinout Features • Latest 6T 0.25u CMOS technology • Easy memory expansion with CE1 and CE2 • TTL/LVTTL-compatible, three-state I/O • 32-pin JEDEC standard packages

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Abstract: P4C147
Contextual Info: P4C147 ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM A - FEATURES • Full CMOS, 6T Cell ■ Single 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times -10/12/15/20/25 ns (Commercial)

Contextual Info: moi _ EDI8810H/L Electronic Designs Inc* Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic Features The E D I8810H /L is a 65,653bit, 6 transistor cell C M O S Static RAM organized as 8Kx8. It is available in both standard H and low power (L)

Contextual Info: FT7C168, FT7C169, FT7C170 HIGH SPEED 4K x 4 SRAM FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (FT7C168 Military) Three Options – FT7C168 Low Power Standby Mode

6Cs smd

Abstract: smd 6CS SMD-5962-88588 sei smd resistors P4C147 P4C150 RS723
Contextual Info: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM j *— -FEATURES • Full CMOS, 6T Cell ■ Single 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times -10 /1 2 /1 5 /2 0 /2 5 ns (Commercial)

Contextual Info: P4C1681, P4C1682 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible Inputs and Outputs High Speed Equal Access and Cycle Times – 12/15/20/25 ns (Commercial) – 20/25/35ns (Military) Standard Pinout (JEDEC Approved)

Contextual Info: FT61981/FT61981L FT61982/FT61982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current FT61981L/1982L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)

Contextual Info: P4C1981/P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current P4C1981L/1982L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)

Contextual Info: FT61981/FT61981L FT61982/FT61982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current FT61981L/1982L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)

P4C1026

Abstract: P4C1258
Contextual Info: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)

22-PIN

Abstract: P4C187 P4C187L
Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial)

Contextual Info: FT6168, FT6169, FT6170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (FT6168 Military) Three Options

Contextual Info: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)

ELECTRONIC DESIGNS INC 91 PAGE 343

Abstract: E2 SMD Transistor 5962-89598 EDI8810H EDI8810HL
Contextual Info: ^EDI _ EDI8810H/L Electronic Designs I n o Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic Features The EDI8810H/L is a 65,653bit, 6 transistor cell C M O S Static R A M organized a s 8Kx8. Random A cce ss Memory It is available in both standard H and low power (L)

Contextual Info: FT61981/FT61981 L FT61982/FT61982(L) ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current (FT61981L/1982L Military) Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)

P4C1258

Contextual Info: P4C1258 ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell Three-State Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Low Power Standard Pinout (JEDEC Approved)

P4C1298

Abstract: P4C1298L
Contextual Info: P4C1298/P4C1298L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM FEATURES Data Retention with 2.0V Supply Full CMOS, 6T Cell High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 15/20/25/35/45 ns (Military) Three-State Outputs

Contextual Info: P4C168/P4C168L , P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three Options – P4C168 Low Power Standby Mode – P4C169 Fast Chip Select Control – P4C170 Fast Chip Select, Output Enable Controls High Speed Equal Access and Cycle Times

P4C147

Abstract: P4C148 P4C149
Contextual Info: P4C148/P4C149 P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Two Options – P4C148 Low Power Standby Mode – P4C149 Fast Chip Select Control High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial)

Contextual Info: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell Three-State Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Low Power Standard Pinout (JEDEC Approved)

P4C165

Abstract: 1519B
Contextual Info: P4C165 ULTRA HIGH SPEED 8K x 8 RESETTABLE STATIC CMOS RAM FEATURES Full CMOS, 6T Cell Output Enable and Dual Chip Enable Control Functions High Speed Equal Access and Cycle Times – 15/20/25 ns (Commercial) – 20/25/35 (Industrial) Single 5V±10% Power Supply

Contextual Info: P4C1258 ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell Three-State Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Low Power Standard Pinout (JEDEC Approved)

P4C168

Abstract: P4C169 P4C170
Contextual Info: P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Three Options

Contextual Info: P4C1299/P4C1299L ULTRA HIGH SPEED 64K X 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C1299L High Speed (Equal Access and Cycle Times) – 15/20/25/35 ns (Commercial/Industrial) – 15/20/25/35/45 ns (Military) Three-State Outputs