6F SMD Search Results

Contextual Info: SMD Type Product specification KC818W BC818W Features For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage

DM 0365 R

Abstract: KS 0302 LUWW5AP
Contextual Info: Diamond DRAGON Lead Pb Free Product - RoHS Compliant LUW W5AP Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: schwarzes SMD-Gehäuse, farbloser klarer Silikon-Verguss, Silikon-Linse; Chip level conversion • Typischer Lichtfluss: 311 lm bei 1400 mA

FKP0D012200C0

Abstract: FKP0C001000B00 MKP 10 wima temperature coefficient FKP 02 FKP0C011000B00
Contextual Info: D WIMA FKP 02 Polypropylene PP Film and Foil Capacitors for Pulse Applications in PCM 2.5 mm Special Features Electrical Data ˜ Pulse duty construction ˜ PCM 2.5 mm ˜ Close tolerances up to ±2.5% ˜ Very low dissipation factor ˜ Negative capacitance change

Philips DC Power Amplifier 380

Abstract: BGA2051 hotel BP317
Contextual Info: DISCRETE SEMICONDUCTORS BGA2051 MMIC power amplifier Objective specification File under Discrete Semiconductors, SC14 1998 Jan 13 Philips Semiconductors Objective specification MMIC power amplifier BGA2051 FEATURES PINNING NO395 • Single 3.6 V supply voltage

MKP4J041006

Abstract: MKP4G036805F00 MKP4O141007E00 MKP4J023302E00 MKP4F MKP4J041006D00 MKP4D036804F00 MKP4D034704D wima 0,047 630 MKP4F026803C00
Contextual Info: D WIMA MKP 4 Metallized Polypropylene PP Capacitors PCM 7.5 mm to 37.5 mm Special Features Electrical Data ˜ High volume/capacitance ratio ˜ Self-healing ˜ Very low dissipation factor ˜ Negative capacitance change versus temperature ˜ Very low dielectric absorption

sod123 diode marking e.1

Contextual Info: MOTOROLA Order this document by MMSV3401T1/D SEMICONDUCTOR TECHNICAL DATA M MSV3401T1 S ilico n Pin Sw itching Diode Motorola Preferred Device This switching diode is designed primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits. It is supplied in a

M4C 51

Contextual Info: MOTOROLA Order this document by MMBV3102LT1/D SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 Silicon Timing Diode M otorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical

Contextual Info: MOTOROLA Order this document by MMBV3700LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general-purpose switching circuits. They are supplied in a

sot223, 31 64

Contextual Info: 1 MOTOROLA Order this document by m m fto o ti/d SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS

t2406 MOTOROLA

Contextual Info: f MOTOROLA Order this document by MMFT2406T1/D SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount MEDIUM POWER TMOS FET 700 mA

HV121WX5-111

Abstract: HV121WX5 HV121WX5-113 hydis hv121w hv121wx5-113 Back Light lvds cable hydis DE 113 LCD TFT colors 128 x 160 pixels Boe Hydis Technology
Contextual Info: PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE HYDIS AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE HYDIS AND MUST BE RETURNED TO BOE HYDIS UPON ITS REQUEST TITLE : HV121WX5-113 Product Specification for Customer Rev. 0

FKS2D013301A00

Contextual Info: D WIMA FKS 2 Polyester PET Film and Foil Capacitors for Pulse Applications in PCM 5 mm Special Features Electrical Data ˜ Pulse duty construction ˜ According to RoHS 2002/95/EC Typical Applications For general DC-applications e.g. ˜ Coupling ˜ Decoupling

Contextual Info: M OTOROLA Order this document by MMDF6N03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F 6N 03H D Medium Power Surface Mount Products M otorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 30 VOLTS RDS on = 35

Contextual Info: MOTOROLA Order this document by MMDF4P03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F4P 03H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 30 VOLTS RDS on = 85 m fi

5p03h

Abstract: FT5P03HDT3
Contextual Info: MOTOROLA Order this document by MMFT5P03HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Medium Power Surface Mount Products TMOS P-C hannel Field E ffect Transistor TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS RDS on = 100 m il MMFT5P03HD is an advanced power MOSFET which utilizes

Contextual Info: MOTOROLA Order this document by MTDF1N02HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TDF1N02HD Medium Power Surface Mount Products Motorola Preferred Device TM OS Dual N-Channel Field E ffect Transistor Micro8™ devices are an advanced series of power MOSFETs

MOTOROLA 3055V

Abstract: 3055VL 3055V
Contextual Info: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD3055VL TMOS V Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.18 OHM N-Channel Enhancement-Mode Silicon Gate

r0402

Abstract: GRM1555C1H101JD01D ERJ2RKF1003X Phycomp C0402 ERJ2RKF10R0X bd 5987 ADP1708 SP02 SP03 LSML291W264H118
Contextual Info: 利用开关电源为高速模数转换器供电 作者：Michael Cobb，ADI公司高速转换器组高级应用工程师 经Power Management DesignLine授权重印，2009年5月27日 简介 采用模数转换器 ADC 的现代电子系统要求更低功耗和更高性能。

era 555 MOTOROLA

Contextual Info: I MOTOROLA Order this document by MTSF3N03HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TSF3N03HD Medium Power Surface Mount Products TMOS Single N-Channel Field Effect Transistor Motorola Preferred Device Micro8™ devices are an advanced series of power MOSFETs

MTB4N80E

Abstract: AN569 SMD310 824 mosfet
Contextual Info: MOTOROLA Order this document by MTB4N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB4N80E Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N–Channel Enhancement–Mode Silicon Gate

MBR370

Abstract: AN1327 AN569 MOC8102 MTB3N120E MTP3N120E MUR430 UC3845BN
Contextual Info: MOTOROLA Order this document by MTB3N120E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB3N120E Motorola Preferred Device TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS on = 5.0 OHM N–Channel Enhancement–Mode Silicon Gate

AN569

Abstract: MTB50N06V SMD310
Contextual Info: MOTOROLA Order this document by MTB50N06V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTB50N06V Designer's TMOS Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET 42 AMPERES 60 VOLTS RDS on = 0.028 OHM N–Channel Enhancement–Mode Silicon Gate

PCA82C251

Abstract: PCA82C251T PCA82C251U PCA82C251 SMD SO8 TYPE
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCA82C251 CAN transceiver for 24 V systems Product specification Supersedes data of 1997 Mar 14 File under Integrated Circuits, IC18 2000 Jan 13 Philips Semiconductors Product specification CAN transceiver for 24 V systems PCA82C251

BUX 0715

Abstract: BUX 127
Contextual Info: M M O T O R O L A Military 10579 Look-Ahead Carry Block ELECTRICALLY TESTED PER: 5962-8774601 The 10579 is a high speed, low power, standard M E C L complex function that is designed to perform the look-ahead carry function. Th is device can be used with the 10581 4-bit A LU directly, or with the 10580 dual arithmetic unit in any