6F SMD Search Results

Contextual Info: SMD Type Product specification KC818W BC818W Features For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H

Contextual Info: Thyristor SMD Type Sensitive Gate Triacs MAC08BT1,MAC08MT1 SOT-223 +0.2 3.50-0.2 6.50 0.1max +0.05 0.90-0.05 Sensitive Gate Trigger Current in Four Trigger Modes Blocking Voltage to 600 Volts +0.1 3.00-0.1 +0.15 1.65-0.15 Features Unit: mm +0.2 -0.2 +0.2 0.90-0.2

SMD A06 AMPLIFIER

Abstract: MAV-4 MMIC MAR-6 MMIC MAR-3 MAV11 MSA01104 MAV-3 MMIC MAR-1 MAV3 A04 monolithic amplifier
Contextual Info: MINI-CIRCUITS / AVANTEK MONOLITHIC AMPLIFIERS DC TO 8GHz 10GHz Usable MARKING IDENTIFICATION / EQUIVALENT Model Plastic Mini-circuits Equivalent SMD Mini-Circuits Equivalent 83mil HP/Avantek Equivalent Plastic HP/Avantek Equivalent SMD HP/Avantek Other Known

diode smd marking code 76

Abstract: s4 69 diode smd BA892 BP317 DIODE marking S4 45 diode 1407 str f 6707 smd diode S4 69 str 6707 smd diode 1407
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BA892 Band-switching diode Preliminary specification File under Discrete Semiconductors, SC01 1998 May 08 Philips Semiconductors Preliminary specification Band-switching diode BA892
 FEATURES PINNING SOD523 • Small plastic SMD package

BB145

Abstract: DIODE Sp marking code BP317 943 vco st smd diode marking code str 4090
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB145 VCO variable capacitance diode Preliminary specification 1999 Sep 15 Philips Semiconductors Preliminary specification FEATURES DESCRIPTION • Ultra small plastic SMD package The BB145 is a planar technology

DM 0365 R

Abstract: KS 0302 LUWW5AP
Contextual Info: Diamond DRAGON Lead Pb Free Product - RoHS Compliant LUW W5AP Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: schwarzes SMD-Gehäuse, farbloser klarer Silikon-Verguss, Silikon-Linse; Chip level conversion • Typischer Lichtfluss: 311 lm bei 1400 mA

Contextual Info: D WIMA Snubber FKP Snubber FKP Capacitors for High Pulse Applications with Metal Foil Electrodes, Schoopage Contacts and Self-Healing Internal Series Connection Special Features Electrical Data ˜ High pulse duty ˜ Self-healing ˜ Particularly reliable contact configurations: 4-pin versions and

Contextual Info: D WIMA Snubber MKP Snubber MKP Capacitors for Pulse Applications with Double-Sided Metallized Electrodes, Schoopage Contacts and Internal Series Connection Special Features Electrical Data ˜ Pulse duty construction ˜ Self-healing ˜ Particularly reliable contact configurations: 4-pin versions and

Contextual Info: D WIMA Snubber MKP Snubber MKP Capacitors for Pulse Applications with Double-Sided Metallized Electrodes, Schoopage Contacts and Internal Series Connection Special Features Electrical Data ˜ Pulse duty construction ˜ Self-healing ˜ Particularly reliable contact configurations: 4-pin versions and

FKP0D012200C0

Abstract: FKP0C001000B00 MKP 10 wima temperature coefficient FKP 02 FKP0C011000B00
Contextual Info: D WIMA FKP 02 Polypropylene PP Film and Foil Capacitors for Pulse Applications in PCM 2.5 mm Special Features Electrical Data ˜ Pulse duty construction ˜ PCM 2.5 mm ˜ Close tolerances up to ±2.5% ˜ Very low dissipation factor ˜ Negative capacitance change

Contextual Info: MOTOROLA Order this document by TP5051/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP5051 The TP5051 is designed for 470 MHz cellular radio base stations in both analog and digital applications. It incorporates high value emitter ballast

Philips DC Power Amplifier 380

Abstract: BGA2051 hotel BP317
Contextual Info: DISCRETE SEMICONDUCTORS BGA2051 MMIC power amplifier Objective specification File under Discrete Semiconductors, SC14 1998 Jan 13 Philips Semiconductors Objective specification MMIC power amplifier BGA2051 FEATURES PINNING NO395 • Single 3.6 V supply voltage

BAV73

Abstract: Power Pin configuration for str 6707 BP317 SOT23 DIODE marking CODE AV Diode smd marking 44 SMD MARKING 541 DIODE
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV73 Dual high-speed switching diode in common cathode configuration Preliminary specification 1997 May 06 Philips Semiconductors Preliminary specification Dual high-speed switching diode in common cathode configuration

smd diode code ok 96

Abstract: A2 DIODE SMD CODE MARKING marking code 10 sot23 philips 23 SMD MARKING CODE s4 BP317 BAP63-05 marking 5BX
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BAP63-05 Silicon PIN diode Objective specification 2000 Feb 17 Philips Semiconductors Objective specification Silicon PIN diode BAP63-05 PINNING FEATURES • High speed switching for RF signals PIN DESCRIPTION

MKP4J041006

Abstract: MKP4G036805F00 MKP4O141007E00 MKP4J023302E00 MKP4F MKP4J041006D00 MKP4D036804F00 MKP4D034704D wima 0,047 630 MKP4F026803C00
Contextual Info: D WIMA MKP 4 Metallized Polypropylene PP Capacitors PCM 7.5 mm to 37.5 mm Special Features Electrical Data ˜ High volume/capacitance ratio ˜ Self-healing ˜ Very low dissipation factor ˜ Negative capacitance change versus temperature ˜ Very low dielectric absorption

BAP50-04

Abstract: BP317 s21 diode smd diode marking CA
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 BAP50-04 General purpose PIN diode Preliminary specification 1999 May 10 Philips Semiconductors Preliminary specification General purpose PIN diode BAP50-04 PINNING FEATURES • Two elements in series configuration in a small-sized

sod123 diode marking e.1

Contextual Info: MOTOROLA Order this document by MMSV3401T1/D SEMICONDUCTOR TECHNICAL DATA M MSV3401T1 S ilico n Pin Sw itching Diode Motorola Preferred Device This switching diode is designed primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits. It is supplied in a

M4C 51

Contextual Info: MOTOROLA Order this document by MMBV3102LT1/D SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 Silicon Timing Diode M otorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical

BAP64-05

Abstract: MCD772
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BAP64-05 Silicon PIN diode Product specification Supersedes data of 1999 Jul 01 1999 Aug 19 Philips Semiconductors Product specification Silicon PIN diode BAP64-05 FEATURES PINNING • High voltage, current controlled

Contextual Info: MOTOROLA Order this document by MMBV3700LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general-purpose switching circuits. They are supplied in a

BAS16WT1

Abstract: BAW62 SMD310 baw62 surface mount
Contextual Info: MOTOROLA Order this document by BAS16WT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Switching Diode BAS16WT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 MAXIMUM RATINGS TA = 25°C 1 Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current

BAS70

Abstract: BAS70-04 BAS70-05 BAS70-06 BAS70-07
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 M3D071 BAS70 series Schottky barrier double diodes Product specification Supersedes data of 1996 Oct 01 1999 Jun 01 Philips Semiconductors Product specification Schottky barrier (double) diodes BAS70 series PINNING

MT108 motorola transistor

Abstract: mt108 MMFT108T1 SMD310
Contextual Info: MOTOROLA Order this document by MMFT108T1/D SEMICONDUCTOR TECHNICAL DATA Field Effect Transistor MMFT108T1 N–Channel Enhancement–Mode Logic Level SOT–223  2, 4 DRAIN TMOS FET TRANSISTOR N–CHANNEL — ENHANCEMENT 1 GATE 4 3 SOURCE 1 2 3 CASE 318E–04, STYLE 3