6E SOT23 Search Results

si2329

Abstract: SI2329DS
Contextual Info: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8

transistor 2N5461

Abstract: 2n5462 2N5460 CONFIGURATION 2N5461 2N5461 CBVK741B019 F63TNR MMBF5460 MMBF5461 PN2222N
Contextual Info: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.

transistor 2N5461

Contextual Info: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.

si2342

Abstract: SI2342DS
Contextual Info: New Product Si2342DS Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.017 at VGS = 4.5 V 6 0.020 at VGS = 2.5 V 6 0.022 at VGS = 1.8 V 6 0.030 at VGS = 1.5 V 6 0.075 at VGS = 1.2 V 6 VDS (V) 8 • Halogen-free According to IEC 61249-2-21

MARKING CODE 16 transistor sot23

Contextual Info: BC818 NPN General Purpose Transistor FEATURES • For general AF applications • Low collector-emitter saturation voltage MECHANICAL DATA • Case: SOT-23 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Symbol

6E SMD

Abstract: marking AF SOT-23 6F BC818A
Contextual Info: Transistors SMD Type NPN Silicon AF Transistors KC818A BC818A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High collector current. 1 0.55 For general AF applications. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High current gain. +0.05

Contextual Info: BC818 NPN General Purpose Transistor FEATURES • For general AF applications • Low collector-emitter saturation voltage MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI

BC817

Abstract: BC818
Contextual Info: BC 817 / BC 818 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN NPN Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1

Contextual Info: BC817, BC818 Small Signal Transistors NPN _ FEATURES SOT-23 + NPN Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications. ♦ Especially suited for automatic insertion in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16,

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

marking of m7 diodes

Abstract: BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2
Contextual Info: FERRANTI 4 semiconductors BSS64 ! NPN S ilico n Planar H igh V o lta g e T ra n s is to DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the BSS63.

sot 23 marking code 2t

Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
Contextual Info: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is

transistor marking code 7E SOT-23

Abstract: transistor dg sot-23 marking 1p transistor sot23 D6 TRANSISTOR MARKING m6 marking transistor sot-23 sot-23 MARKING CODE G1 TRANSISTOR 1P SOT23 transistor sot-23 Marking AR transistor G1 SOT-23 transistor cg sot-23
Contextual Info: FERRANTI semiconductors BSS63 PNP S ilico n Planar High V o lta g e T ra n s is to r D ES C R IPTIO N & This plastic encapsulated transistor is designed fo r any application requiring high vo lta g e capability a t relatively low collector currents. C o m p lem en tary to th e BSS64.

sot-23 MARKING CODE G1

Abstract: code marking 2M sot-23 sot23 marking m8 marking code T4 SOT-23 sot 23 marking code 2t A56 sot ferranti marking code FA sot23 FMMT-A56 amplifier A55 marking
Contextual Info: i FERRANTI FMMT-A55 FMMT-A56 T IIsemiconductorsL PNP Sili con Planar M e d i u m P o w e r Transistors D E S C R IP T IO N M e d iu m pow er transisto rs designed fo r sm all and am plification from d.c. to radio frequencies, in tio n s such as A u d io Frequency Am plifiers,

SOT-23 marking l31

Abstract: wA SOT23 SWITCHING F9 SOT23 marking va transistors C5 MARKING TRANSISTOR transistor dg sot-23 U/25/20/TN26/15/850/F9 SOT23 BCW29 BCW30 BFQ31
Contextual Info: FERRANTI * semiconductors FMMT2369 NPN Silicon Planar High Speed Switching Transistor DESCRIPTION This device is intended specificelly fo r use in high speed, lo w current switching epplications. Encapsulated in th e popular SOT-213 package these devices are designed specifically fo r use in thin and thick film

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

marking code AD

Abstract: transistor EH sot-23 ZD 103 ma BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20
Contextual Info: FERRANTI semiconductors FMMT2369A NPN Silicon Planar High Speed S w itching Transistor DESCRIPTION This device is intended specifically for use in high speed, low current switching applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid

BCV71R-K6

Abstract: BCV71 BCV72R small signal transistor BCV72-K8 marking H6 sot 23 BCV71R BCV72 BCW29 marking h5 sot-23-5
Contextual Info: FERRANTI *semiconductors BCV71 BCV72 NPN Silicon Planar Small Signal Transistor DES C R IPTIO N These devices are intended fo r lo w level, general purpose applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ic k film hybrid

ferranti

Abstract: FMMT-A20 FMMT2222A BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20
Contextual Info: FERRANTI semiconductors FMMT-A20 NPN S ilico n Planar Small Signal Transistor D E S C R IP T IO N These devices ere intended for sm all and m edium signal am plification applications from d.c. to radio frequencies. Encapsulated in the popular S O T -23 package these devices

transistor marking code 7E SOT-23

Abstract: transistor with marking BH BCV72 BFQ31 BFQ31A FMMT5087 FMMT5087R NPN transistors sot-23 26 ferranti CB SOT-23
Contextual Info: I t FERRANTI IlsemiconductorsL FMMT5087 PNP S ilicon Planar Small Signal T ra n s is to r D ES C R IPTIO N T h is d e v ic e is a p p lic a tio n s . in te n d e d fo r lo w le v e l, g e n e ra l p u rp o s e E n ca p s u la te d in th e p o p u la r SOT-123 p a c k a g e th e d e v ic e is

BCV72

Abstract: BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20 FMMT4125 transistor dg sot-23 ferranti
Contextual Info: I t FERRANTI llsemiconductorsL FMMT4125 PNP Silicon Planar General Purpose S w itch in g T ransistor D E S C R IP T IO N T h is device is intended for use in sm a ll and m e diu m sign a l a m p lificatio n a p p lica tio n s from d.c. to radio requencies.

Contextual Info: TMP411-Q1 www.ti.com SBOS527F – DECEMBER 2010 – REVISED NOVEMBER 2013 ±1°C Remote and Local Temperature Sensor With N-Factor and Series Resistance Correction Check for Samples: TMP411-Q1 FEATURES APPLICATIONS • • • 1 2 • • • • • • •

Contextual Info: UM10402 STARplug Triple Output demo board Rev. 1 — 1 September 2011 User manual Document information Info Content Keywords STARplug, SMPS, flyback, converter Abstract The NXP Semiconductors STARplug Triple Output demo board comes in two versions: 12 W and 18 W. By default the boards are configured as an

MAX6689

Abstract: MAX6689EP34 MAX6689EP38 MAX6689EP9A MAX6689EP9E MAX6689UP34 MAX6689UP38 MAX6689UP9A MAX6689UP9E
Contextual Info: 19-0567; Rev 0; 5/06 7-Channel Precision Temperature Monitor The MAX6689 precision multichannel temperature sensor monitors its own temperature and the temperatures of up to six external diode-connected transistors. All temperature channels have programmable alert thresholds. Channels 1, 4, 5, and 6 also have programmable