transistor 6bw
Abstract: 3BW 02 R047 ERJ6BQ code 6BW ERJ6R ERJ8BW
Contextual Info: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ BW : 0402, 0603, 0805, 1206 ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2512 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2BW, 3BW, 6BW, 8BW
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transistor 6bw3bw 02r047erj6bq+3code 6bwerj6rerj8bw
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transistor 6bw
Abstract: 6BW 16 6bw 01 R047 1206- 0,25 ERJ6RQ ERJ8BW
Contextual Info: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2512 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3R, 3B, 6R, 6B, 8R, 8B, 14R, 14B, 12R, 1TR ERJ L03, L06, L08, L14, L12,
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erjl03erjl14transistor 6bw6bw 16+56bw 01r0471206- 0,25erj6rqerj8bw
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Contextual Info: Product specification KC817-25 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 ● High current gain. 1 ● Low collector-emitter saturation voltage 0.55 ● High collector current. +0.1 1.3-0.1 +0.1 2.4-0.1 ● For general AF applications. 2
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Contextual Info: Transistors SMD Type NPN General Purpose Transistors KC817-25 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 ● High current gain. 1 ● Low collector-emitter saturation voltage 0.55 ● High collector current. +0.1 1.3-0.1 +0.1 2.4-0.1 ● For general AF applications.
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transistor 6bw
Abstract: transistor l1w R 1206 resistor ERJ8BW 6BW 16 resistor E24 R047 8R8B ERJ6R ERJ6RQ
Contextual Info: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2512 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3R, 3B, 6R, 6B, 8R, 8B, 14R, 14B, 12R, 1TR ERJ L03, L06, L08, L14, L12,
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erjl03erjl14transistor 6bwtransistor l1w+8r 1206 resistorerj8bw6bw 16resistor e24r0478r8berj6rerj6rq
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ERJ6RQ
Abstract: 6BW 16 ERJ6R ERJ8BW
Contextual Info: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2512 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3R, 3B, 6R, 6B, 8R, 8B, 14R, 14B, 12R, 1TR ERJ L03, L06, L08, L14, L12,
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erjl03erjl14erj6rq6bw 16+2erj6rerj8bw
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marking code 6BW
Abstract: 6BW MARKING 6BG TVS marking 6BN marking 6Cn marking 6ah SMA6J14A 6cg marking code SMA6J12 tvs 6ae
Contextual Info: SMA6J5.0 thru 40A Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AC SMA Cathode Band 0.065 (1.65) Stand-off Voltage 5.0 to 40V Peak Pulse Power 600W 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) t c u rod P New Mounting Pad Layout 0.066 MIN. (1.68 MIN.)
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do-214acmil-std-750marking code 6bw6bw marking+86bg tvsmarking 6bnmarking 6cnmarking 6ahsma6j14a6cg marking codesma6j12tvs 6ae
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marking code 6BW
Abstract: marking 6Cn marking 6bs 6cg marking code tr 6bp marking 6ap 6Af surface mount marking 6CP 6BW MARKING 6az 17
Contextual Info: SMA6J5.0 thru 40A Vishay Semiconductors New Product formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AC SMA Stand-off Voltage 5.0 to 40V Peak Pulse Power 600W Cathode Band 0.065 (1.65) 0.110 (2.79) 0.100 (2.54)
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do-214ac07-may-02marking code 6bwmarking 6cn+8marking 6bs6cg marking codetr 6bpmarking 6ap6af surface mountmarking 6cp6bw marking6az 17
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6BW 74
Abstract: 6BW 81 6BW 48 6BW 83 6BW 68 6bw 95 UG25T7200L4DR 6BW 87 6BW 94
Contextual Info: UG25T7200L4DR Data sheets can be downloaded at www.unigen.com Solutions For A Real Time World TM 2G Bytes 256M x 72 bits SYNCHRONOUS DRAM MODULE 240 Pin DDR2 SDRAM Register & PLL DIMM w/ECC based on 36 pcs 128M x 4 DDR2 SDRAM 8K Refresh FEATURES ABSOLUTE MAXIMUM RATINGS
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ug25t7200l4dr240-pinpc2-3200pc2-4200+14pc2-530018-compatibled0-d17a0-a13d18-d35d0-d356bw 746bw 816bw 486bw 836bw 686bw 956bw 876bw 94
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6BW 81
Abstract: 6BW 74 6BW 83 6BW MARKING
Contextual Info: UG25T7200L4DR Data sheets can be downloaded at www.unigen.com 2G Bytes 256M x 72 bits SYNCHRONOUS DRAM MODULE 240 Pin DDR2 SDRAM Register & PLL DIMM w/ECC based on 36 pcs 128M x 4 DDR2 SDRAM 8K Refresh FEATURES ABSOLUTE MAXIMUM RATINGS • • • • •
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ug25t7200l4drpc3200pc4200pc5300+8pc6400400mps533mps667mps6bw 816bw 746bw 836bw marking
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6BW 48
Abstract: MARKING 6BW 6BW MARKING
Contextual Info: UG12T7200K4DR Data sheets can be downloaded at www.unigen.com Solutions For A Real Time World TM 1G Bytes 128M x 72 bits SYNCHRONOUS DRAM MODULE 240 Pin DDR2 SDRAM Register & PLL DIMM w/ECC based on 36 pcs 64M x 4 DDR2 SDRAM 8K Refresh FEATURES ABSOLUTE MAXIMUM RATINGS
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ug12t7200k4dr240-pinpc2-3200pc2-4200+9pc2-530018-compatibled0-d17a0-a13d18-d35d0-d356bw 48marking 6bw6bw marking
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Contextual Info: _ LT1097 / T L i n C A ß TECHNOLOGY Low Cost, Low Power Precision O p Amp F€ ATU R € S D C S C R IP T IO n 50/tV Max • Offset Voltage ■ Offset Voltage Drift 1.0/jV/°CMax ■ Bias Current 250pA Max 250pA Max ■ Offset Current
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lt109750/tv250pa560/1a+2115db10/iv
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6BG marking DIODE
Abstract: diode 6BG
Contextual Info: SMA6J High junction temperature Transil Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low clamping voltage versus standard series
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do-214ac883g-method6bg marking diodediode 6bg |
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SMBJ100D
Contextual Info: SMBJ5.0D thru SMBJ188D www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • ± 3.5 %, very tight VBR tolerance • Available in uni-directional
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smbj188ddo-214aaj-std-0202002/95/ec+42011/65/eujs709a02-oct-12smbj100d
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6bw 95
Abstract: 6BG marking DIODE marking code 6BW 6ba diode SMA6J12 marking 6BN 6bg diode 6BW 81 6BW 48 SMA6J15A
Contextual Info: SMA6J High junction temperature Transil Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low clamping voltage versus standard series
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do-214ac883g-method6bw 956bg marking diode+8marking code 6bw6ba diodesma6j12marking 6bn6bg diode6bw 816bw 48sma6j15a
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transistor 6bw
Abstract: 3 PIN 6Bw transistor 6Bw transistor 6bw 12 transistor 6BW MARKING TOP marking 6BW
Contextual Info: r j urm TECHNOLOGY LTC125Q Very Low Noise Zero-Drift Bridge Amplifier FCfflURCS D CSCRIPTIOn • Very Low Noise: 0.75nVp.p Typ, 0.1 Hz to 10Hz ■ DC to 1Hz Noise Lower Than OP-07 ■ Full Output Swing into 1k Load ■ Offset Voltage: 10 iV Max ■ Offset Voltage Drift: 50nV/°C Max
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75nvpop-07110db115db+8ltc125qltc1250transistor 6bw3 pin 6bw transistor6bw transistor6bw 12 transistor6bw markingtop marking 6bw
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marking code 6BW
Abstract: ERJA1 ERJB2
Contextual Info: 2014 CATALOG Fixed Resistors LQGXVWULDOSDQDVRQLFFRP Fixed Resistors CONTENTS Product Item Type Safety Precautions Common precautions for Fixed Resistors Rectangular Type Surface Mount Resistors Attenuator Power Type 2 Thick Film Chip Resistors
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marking code 6bwerja1erjb2 |
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dd417
Contextual Info: 'd a t a b427525 GÜM17SE ST2 « N E C E NEC sh eet MOS INTEGRATED CIRCUIT f juPD42S4260L, 424260L 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The /¿PD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs with optional fast page mode
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b427525m17sejupd42s4260l424260l+516-bitpd42s4260l/1pd42s4260l//pd424260ldd417
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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fjj141/a2305dfjj181/a2305e/848+16fjj191/afjl101/acd2306dfjy101/a2306e/832cd2307/9443te4452n3303ecc88taa*310b9d transistorbyy32gex36/7ferranti zs706ej73n159
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
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dg211dg300dg308tca965 equivalent+9uln2283capacitor 473j 100nuaf771transistor gdv 65apbd352303cm2716taa2761taa4761uln2401
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panasonic inverter dv 707 manual
Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
Contextual Info: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594
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panasonic inverter dv 707 manual018t a423mosfet ftr 03-earcotronics 1.27.6+6nsl 7053mkp dx 3500 manualhoneywell dbm 01apolyester capacitors 823k 250vsprague powerlytic 36dxsprague 68d
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