682 SOT Search Results

SOT23-6 MARKING 310

Abstract: transistor MARKING NC KRC OPA2680 OPA2681 OPA2682 OPA3680 OPA3681 OPA3682 OPA680 OPA681
Contextual Info: OPA682 OPA 682 OPA 682 OPA6 82 Wideband, Fixed Gain BUFFER AMPLIFIER With Disable TM FEATURES ● ● ● ● ● ● ● ● APPLICATIONS INTERNALLY FIXED GAIN: +2 OR ±1 HIGH BANDWIDTH G = +2 : 240MHz LOW SUPPLY CURRENT: 6mA LOW DISABLED CURRENT: 320µA

transistor MARKING NC KRC

Abstract: OPA2680 OPA2681 OPA2682 OPA3680 OPA3681 OPA3682 OPA680 OPA681 OPA682
Contextual Info: OPA682 OPA 682 OPA 682 OPA6 82 Wideband, Fixed Gain BUFFER AMPLIFIER With Disable TM FEATURES ● ● ● ● ● ● ● ● APPLICATIONS INTERNALLY FIXED GAIN: +2 OR ±1 HIGH BANDWIDTH G = +2 : 240MHz LOW SUPPLY CURRENT: 6mA LOW DISABLED CURRENT: 320µA

transistor MARKING NC KRC

Abstract: OPA2680 OPA2681 OPA2682 OPA3680 OPA3681 OPA3682 OPA680 OPA681 OPA682
Contextual Info: OPA682 OPA 682 OPA 682 OPA6 82 Wideband, Fixed Gain BUFFER AMPLIFIER With Disable TM FEATURES ● ● ● ● ● ● ● ● APPLICATIONS INTERNALLY FIXED GAIN: +2 OR ±1 HIGH BANDWIDTH G = +2 : 240MHz LOW SUPPLY CURRENT: 6mA LOW DISABLED CURRENT: 320µA

Contextual Info: OPA682 OPA 682 OPA 682 OPA6 82 Wideband, Fixed Gain BUFFER AMPLIFIER With Disable TM FEATURES ● ● ● ● ● ● ● ● APPLICATIONS INTERNALLY FIXED GAIN: +2 OR ±1 HIGH BANDWIDTH G = +2 : 240MHz LOW SUPPLY CURRENT: 6mA LOW DISABLED CURRENT: 320µA

SOT23-6 MARKING 310

Abstract: carbon composition resistors SOT23-6 transistor MARKING NC KRC 8 pin 4v power supply converter op 50MHZ OPEN dip OPA2680 OPA2681 OPA2682 OPA3680
Contextual Info: OPA682 OPA 682 OPA 682 OPA6 82 Wideband, Fixed Gain BUFFER AMPLIFIER With Disable TM FEATURES ● ● ● ● ● ● ● ● APPLICATIONS INTERNALLY FIXED GAIN: +2 OR ±1 HIGH BANDWIDTH G = +2 : 240MHz LOW SUPPLY CURRENT: 6mA LOW DISABLED CURRENT: 320µA

parametric equalizer ic analog -digital

Abstract: OPA2680 OPA2681 OPA2682 OPA3680 OPA3681 OPA3682 OPA680 OPA681 OPA682
Contextual Info: OPA682 OPA 682 OPA 682 OPA6 82 Wideband, Fixed Gain BUFFER AMPLIFIER With Disable TM FEATURES ● ● ● ● ● ● ● APPLICATIONS INTERNALLY FIXED GAIN +2 OR ±1 HIGH BANDWIDTH G = +2 : 240MHz LOW SUPPLY CURRENT: 6mA LOW DISABLED CURRENT: 320µA HIGH OUTPUT CURRENT: 150mA

Contextual Info: _ J V BD676; 678 BD680; 682; 684 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit fo r audio and video output applications; SOT-32 plastic envelope. N-P-N complements are BD675, BD677, BD679, BD681 and BD683.

bd679 PNP transistor

Abstract: bd677 datasheet A-BD682 BD677 transistor BD682 transistor BD677 BD677 BD677A BD678 BD678A
Contextual Info: BD677/A/679/A/681 BD678/A/680/A/682  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

IC AL 6001 audio ic

Abstract: transistor 684 B0680 BD676 5559 transistor BD680 B0680 DIODE bd679 PNP transistor 684 k 100 BD675
Contextual Info: BD676; 678 J ^ BD680; 682; 684 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio and video output applications; SOT-32 plastic envelope. N-P-N complements are BD675, BD677, BD679, BD681 and BD683.

Contextual Info: SGS-THOMSON MDO^miera «! BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

BD677

Abstract: BD677A BD678 BD678A BD679 BD679A BD680 BD680A BD681
Contextual Info: BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION

BD677

Abstract: 679 st BD677A BD678 BD678A BD679 BD679A BD680 BD680A BD681
Contextual Info: BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

BD677

Abstract: bd679 PNP transistor transistor BD677 BD677A BD678 BD678A BD679 BD679A BD680 BD680A
Contextual Info: BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

B0679

Abstract: d677a D679 B0680 DIODE B0677 diode 682 bd677 679A
Contextual Info: SCS-THOMSON BD677/A/679/A/681 BD678/A/680/A/682 HôÊl |[LiÊîi®[MSigi COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS * SGS-THOMSON PREFERRED SALESTYPES • COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLfNGTON CONFIGURATION . INTEGRATED ANTIPARALLEL

B0680

Abstract: bd 682 0477A2 her32 bd676 Bd 676/BD 675 BD677 BD 678 BD680 BD681
Contextual Info: BD 676 'BD 678 -BD 680 -BD 682 'W Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: Features: • Sehr hohe Stromverstärkung • Very high current transfer ratio

BD683

Abstract: BD679 TO126 BD675 BD676 TO126 package transistor bd681 BD675A BD677 BD677A
Contextual Info: Transys Electronics L I M I T E D NPN PLASTIC POWER DARLINGTON TRANSISTORS BD675, BD675A BD677, BD677A BD679, BD679A BD681, BD683 TO126 Plastic Package EC B Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684 ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage

BD683

Abstract: BD675 BD675A BD676 BD677 BD677A BD679 BD679A BD681 bd676 10k
Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN PLASTIC POWER DARLINGTON TRANSISTORS BD675, BD675A BD677, BD677A BD679, BD679A BD681, BD683 TO126 Plastic Package EC B Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684

BD676

Abstract: 684 k 100
Contextual Info: BD676; 678 BD680; 682; 684 PHILIPS INTERNATIONAL SbE D • 711002b 0045^00 7Ta M P H I N SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio and video output applications; SOT-32 plastic envelope. N-P-N complements are BD675, BD677, BD679, BD681 and BD683.

TO126 package

Abstract: BD683 darlington power pack pin configuration NPN transistor BD679 to-126 transistor BD675 BD675A BD676 BD677 BD677A
Contextual Info: Continental Device India Limited IS/ISO 9002 Lic# QSC/L- 000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer NPN PLASTIC POWER DARLINGTON TRANSISTORS BD675, BD675A BD677, BD677A BD679, BD679A BD681, BD683 TO126 Plastic Package EC B Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684

ifr 2945b service manual

Abstract: c2581 12v 1000W car AUDIO AMPLIFIER CIRCUIT DIAGRAM hp 1007 printer logic card diagram car power amp circuit diagrams 1000w active power meter with ten level controller b1417 1000w audio amplifier circuit diagram c3377 C3240
Contextual Info: COMMUNICATIONS SERVICE MONITOR 2945B Operating Manual Document part no. 46892/682 Issue 2 28 February 2006 COMMUNICATIONS SERVICE MONITOR 2945B  Aeroflex International Ltd. 2006 No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying,

BDG82

Abstract: BD676 BD680 B0680 BD683 BD675 BD677 BD679 BD681 BD684
Contextual Info: BD676; 678 BD680; 682; 684 PHILIPS INTERNA TIO NA L SbE D • 7110fl2b 0042^00 7 Tô ■ P HIN SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio and video output applications; SOT-32 plastic envelope. N-P-N complements are BD675, BD677, BD679, BD681 and BD683.

resistor

Abstract: 1n5819 smd 1mh inductor tl431 smd ln4001 .1k 400V capacitor 4.7uF 400V capacitor 1N5819 smd diode smd 472 resistor smd 102
Contextual Info: D esignator P art Type F oot P rint D e scrip tio n A ccu ra te L1 1mH Inductor C1 4.7UF/400V Electric Capacitor 85eC C2 4.7UF/400V Electric Capacitor 85eC C3 222/1KV Ceramic Capacitor C4 100U/16V Electric Capacitor C5 682/60V 0805A SMD Capacitor C6 222/60V

I682

Abstract: T-973 accm sot23-5 682 SOT23
Contextual Info: T9-73 05; R e v O ; 10/97 A lif lX I A I Sw itched-Capacitor Voltage Doublers G eneral D escription Oscillator control circuitry and four power M O SFET switches are included on-chip. The MAXI 682 operates at 12kHz and the MAX1683 operates at 35kHz. A typi­

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35