660 TG DIODE Search Results

660 tg diode

Abstract: 660 TG
Contextual Info: 3.4mm RIGHT ANGLE LED INDICATOR Part Number: WP138A8QMP/SRD/TG Super Bright Red Features Description z SURFACE MOUNT TYPE. The Super Bright Red source color devices are made with z I.C.COMPATIBLE. Gallium Aluminum Arsenide Red Light Emitting Diode. z BLACK CASE ENHANCES CONTRAST RATIO.

660 tg diode

Abstract: 660 TG
Contextual Info: 3.4mm RIGHT ANGLE LED INDICATOR WP138A8QMP/SRD/TG Features SUPER BRIGHT RED Description PRE-TRIMMED LEADS FOR PC MOUNTING. The Super Bright Red source color devices are made with CAN BE ASSEMBLED WITH EACH OTHER. Gallium Aluminum Arsenide Red Light Emitting Diode.

AC Motors

Abstract: 6r1100e fuji 6000 newave power 6RI100E FUJI POWER MODULES DIODE
Contextual Info: _ H- 6-Pack Diode «¡85v 6R1100E-060/080 POWER DIODE MODULE Features • All the term inals and the m ounting plate are electrically isolated. These modules can be installed in the same cooling fin as other modules, thus saving installation space - a cost-effective feature.

tig 140

Abstract: tig ac inverter circuit 6RI50E diode power i 50 9080F
Contextual Info: FUJI dlUMËÜÜSDË 6-Pack Diode 600/800 V 50 A 6RI 50E-060/080 POWER DIODE MODULE Features All the term inals and the m ounting plate are electrically isolated. These modules can be installed in the same cooling fin as other modules, thus saving installation

Y234

Abstract: newave power 2RI100E ZS1000
Contextual Info: _ _ _ 2-Pack Diode 2R110OE-060/080 '“ S T POWER DIODE MODULE Features • All the term inals and the m ounting plate are electrically isolated. These modules can be Installed in the same cooling fin as other modules, thus saving installation space - a cost-effective feature.

Contextual Info: 5 /a y h '+ - yiy u JKUT S W -h 5 Schottky Barrier Diode Twin Diode • W I 2 \ f i£ I I ] OUTLINE DIMENSIONS D20SC9M 90V 20A •T jl5 0 ° C • P rrsm 7 7 ^ m •S R S S %DC/DC n y j K — 2 • m m , t f - h s oAggg • I f > 7 ti-^ w *gg RATINGS T c = 25°C

660 tg diode

Contextual Info: S/as/h=*P- AUT' Schottky Barrier Diode OUTLINE DIMENSIONS DF20SC9M U n it • m m Packag e I STO -220 I n 9 ±0.5 nyH B -^ W 90V 20A >SM D >Tjl50°C > P rrs m t j ^ y ' j i f f iti nm-xmzamm >SRS;H i DC/ DCnyj K- z (2 )@ (D m m s t f - h s oAHtg l i S f e s 7tt—

Contextual Info: v a y Schottky Barrier Diode Twin Diode O U T L IN E D IM E N S IO N S SF20SC4 40V 20A • T j 15CTC • P r r s m 77/ 5 V î ' i S ë Œ •« » 1 Œ 2 K V 1 S E •S R 8 S •D C /D C •ma. f-A . oa §5 • a « . • Æ tè ü R A T IN G S • fê & fii^ ü É të

660 tg diode

Contextual Info: 2 /a v h + - K U 7 S W - I * y j y a Schottky Barrier Diode Twin Diode SF20SC9 Unit •mm P a c k a g e I FT O -2 2 0 1 0 ±0-2 </>3.2-cu 90V 20A 4.5 ±a 2 .7 ±a: Date code nafe_ @1 010N Type No. VF20!SC9 M _ •Tjl50°C Polarity • P rrsm T 2.7±0~

smd diode 27 E

Abstract: 660 tg diode smd marking rs Diode SOT-23 marking 27 smd transistor marking 26 MMBD1201 MMBD1204 mmbd1201 datasheet MMBD1203 MMBD1205
Contextual Info: Diodes SMD Type High Conductance Ultra Fast Diode MMBD1201;MMBD1203 MMBD1204;MMBD1205 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base

Contextual Info: 2 /a v h + - KU7 S W - I * y j y a Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS SF20SC4 Unit • mm Package I FTO-220 4.5 ±a 10±0-2 2.7±0- <¿3.2-01 Date code nafe_ Type No. mu_ Polarity 40V 20A • T jl5 0 ° C I7 •P rrsm ffiiE @ 1 0181

Contextual Info: s/3'.vh+ - a"uy y- Schottky Barrier Diode Single Diode Surface Mount DE10S3L 30 V 10A >SM D >Tjl50°C U S V f = 0.45V >Prr sm tv ^ : iim-xmzami >SRS;H > D C /D C m n . 'f - h . o A i m l ì s f e s 7ti — ' ^ y i i ' S ^ s RATINGS Absolute Maximum Ratings isÊ » & ^i|rêa

660 tg diode

Abstract: S25SC zc marking diode
Contextual Info: Schottky Barrier Diode Twin Diode W tm S25SC6M OUTLINE Unit-mm Weight 6.1 g Typ Package : MTO-3P 60V 25A @ Feature • Tj=150°C • Tj=150°C • PRRSM T’y ' C ^ V ^ x f f i l l • P rrsm Rating • Small 8 jc • High lo Rating • 8 jc ftW S U Main Use

Contextual Info: BF3510TV FULL 50-60HZ RECTIFICATION BRIDGE PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS I f a v 35 A V rrm 1000 V Tj (max) 150 °C V f (max) 1.30 V FEATURESAND BENEFITS • COMPACT ISOTOP DESIGN COMPATIBLE WITH FAST DIODES AND TRANSISTORS. ■ EXCELLENT THERMAL TRANSFER BETWEEN

660 tg diode

Contextual Info: Schottky Barrier Diode Twin Diode W tm OUTLINE P ackage : FTO-220 SF20SC4 Unit-mm Weight 1.9g Typ (W 40V 20A 4.5 Feature • Tj=150°C • Tj=150°C • PRR SM T ’A ' i ^ V Î ' I ' K i E • P • 71 [ Æ - J U K • Full Molded • l Ë S I f f i 2 kV S Ï I

L17c

Abstract: D25SC6M ftz marking
Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE D25SC6M Unit : mm P a c k a g e : IT O -3 P Weight 4.3« T yp 5.5 60V 25A Feature • T j= i5 (rc • Tj=150°C • P r r s m P K t? • P rrsm • ttU K S B Rating • High lo Rating • 7 J I Æ - J L/K • Full Molded

D20SC9M

Abstract: marking code AJs
Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE D20SC9M Unit : mm P a c k a g e : IT O -3 P Weight 4.3« Typ 15 90V 20A Date code Feature • T j= 1 5 0 t: • Tj=150°C • P rrs m T lK r jy is x fä M . • *«9K8B • P rr s m Rating • High lo Rating • 7 J I Æ - J L-K

Semikron MSK B 80

Abstract: RSM AH-16
Contextual Info: S1E D • Ô13bb71 GDDBTfll 2TT « S E K G s e MIKRG n SEMIKRON INC V rsm VVRMS V rrm V V 400 800 80 250 V BR VvRMS V V 1300 1700 500 660 M in ia t u r e B r i d g e R e c t if ie r s Id (Tamb = 45 °C) 2A M S K B . . - 1, 5 M SKa B . - 1, 5 Types ^ r?Jb -o s

660 tg diode

Contextual Info: Schottky Barrier Diode Twin Diode Wtm SF20SC6 OUTLINE Unit-mm Package : FTO-220 Weight 1.9g Typ 60V 20A Feature 4.5 • Tj=150°C • Tj=150°C • PRRSM T ’A ' i ^ V Î ' I ' K i E • P rrsm • 71 [Æ - J U K • Full Molded • l Ë S I f f i 2kV S Ï I

Contextual Info: Schottky Barrier Diode Twin Diode W tm S20SC4M 40V OUTLINE A Feature • Tj=150°C • P r r s m Rating • Small B jc • High lo Rating • T j= 1 5 0 °C • P rR S M 7 A '5 V '> I« § Œ • * i « S i Main Use • • • • • D C /D C Z iy iK — S

Contextual Info: DIXYS Thyristor Modules Thyristor/Diode Modules MCC 170 ITRMS TAVM v RRM V RSM V RRM v DSM V DRM V V 1300 1500 1700 1900 1200 1400 1600 1800 MCC MCC MCC MCC 170-12io1 170-14io1 170-16io1 170-18io1 ^TRMS ^TAVM Tc = 85°C; 180° sine ^TSM> ^FSM TVJ = 45°C;

Contextual Info: 6RI50E 50 a POWER DIODE MODULE : Features • <'>*<—'>3>?-'ym 7 Glass Passivation Chip • J È i l & A ' l i P Easy Connection • fê it Insulated Type : A p p lica tio n s • Inverters • /<-yT-U— Battery Chargers • f i i ï fi Æ— DC Motors

Contextual Info: Product specification MMBD1201;MMBD1203 MMBD1204;MMBD1205 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5

TCA 700 y

Abstract: piezoelectric disc 5A 1 Mhz Thomson csf ceramic capacitor hp 2211 8 kvar capacitor capacitor package 2200 pf ceramic capacitor Voltage Tripler AC to DC 5 V Thomson-CSF ceramic capacitor filter block diagram induction heating
Contextual Info: HIGH VOLTAGE AND POWER CERAMIC CAPACITORS TPC, a subsidiary of THOMSON CSF, is a worldwide electronic component manufacturer, with over 40 years experience in ceramic capacitors and offers a complete package covering design, manufacture, just-in-time delivery and quality assurance for ceramic capacitors.