660 TG Search Results

B 660 TG

Abstract: 7A PNP POWER TRANSISTOR "SOT23" BF660 7A PNP POWER TRANSISTOR SOT23 660 TG transistor CB 945
Contextual Info: SIEMENS PNP Silicon RF Transistor BF 660 • For VHF oscillator applications Type Marking Ordering Code tape and reel PinC tanfigu ration 1 2 3 Package1) BF 660 LEs Q62702-F982 B SOT-23 E C Maximum Ratings Parameter Symbol Collector-emitter voltage Collector-base voltage

TLR123

Abstract: LBR3378S TLS262 EBR3371X EBR3402S TLUR163 TLR124 EBR3368S TLR102A EBR3432S
Contextual Info: - 26- 53 a J+ 4» fltf c ’ , « X 1MÈS ft?#« 2 Xr ¡deg'i 5. 'T ., = 25’0 T,:=25'C tsm w - t 7, irnA: vv '.v; If imAi Wl « ¡ f \iW ï. »¡.fi ÌF Vu 'm A: •V ■ ¡’C.' EBR3402S ÄS 30 660 60 20 1.7 20 50 4 -30-85 3« BR3402S Ä it 30 660 30 20

56-Lead TSOP Package

Abstract: 28F008sa Intel StrataFlash Memory j3 28F008S3 28F016S3 28F320J5 28F640J5 298161
Contextual Info: Migration Guide to 3 Volt Intel StrataFlash Memory Application Note 660 December 2000 Order Number: 292218-005 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

00Q01

Abstract: ZQ50A BWRO
Contextual Info: PRELIMINARY CY7C1337 32K x 32 Synchronous-Pipelined Cache RAM Features • Low 660 |xW standby power (f=0, L version) • Supports 117-MHz bus operations with zero wait states • Fully registered Inputs and outputs for pipelined oper­ ation • 32K x 32 common I/O architecture

Contextual Info: electronic June 1992 HM65799 HI-REL DATA SHEET_ 64 k x 4 WITH OE HIGH SPEED CMOS SRAM FEATURES FAST ACCESS TIME : 25*/35/45/55 ns LOW POWER CONSUMPTION ACTIVE : 660 mW STANDBY : 190 mW WIDE TEMPERATURE RANGE : - 55 TO + 125°C TTL COMPATIBLE INPUTS AND OUTPUTS

mobile 478 SOCKET PIN LAYOUT

Abstract: optical out of balance sensor tcm8210 ITU656 RGB565 TCM8210MD YUV422 TOSHIBA CAMERA MODULE qqvga
Contextual Info: TCM8210MD TOSHIBA C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TCM8210MD TENTATIVE VGA CAMERA MODULE The TCM8210MD is a camera module which includes area color image sensor embedded with camera signal processor that meets with VGA format. In the sensor area 492 vertical and 660 horizontal signal pixels, and the image

tcm8210

Abstract: TCM8210MD ALC 655 VGA camera module TCM8210MDA ITU656 RGB565 YUV422 0YUV422 QCIF
Contextual Info: TCM8210MD A Ver. 2.07 TOSHIBA C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TCM8210MD (A) TENTATIVE VGA CAMERA MODULE The TCM8210MD(A) is a camera module which includes area color image sensor embedded with camera signal processor that meets with VGA format. In the sensor area 492 vertical and 660 horizontal signal pixels, and the image

TCM8230MD I2C

Abstract: TCM8230MD TCM8230MDA TCM8230 color tv block diagram sensor photo QCIF* tcm8230md toshiba filtering "average pixel value" ITU656 RGB565
Contextual Info: TCM8230MD A Ver. 1.20 TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TCM8230MD (A) TENTATIVE VGA CAMERA MODULE The TCM8230MD(A) is a camera module which includes area color image sensor embedded with camera signal processor that meets with VGA format. In the sensor area 492 vertical and 660 horizontal signal pixels, and the image

TCM8210MD

Abstract: ITU656 RGB565 YUV422 722H 1530h TCM8210MDA TOSHIBA CAMERA MODULE
Contextual Info: TCM8210MD A Ver. 2.01 TOSHIBA C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TCM8210MD (A) TENTATIVE VGA CAMERA MODULE The TCM8210MD(A) is a camera module which includes area color image sensor embedded with camera signal processor that meets with VGA format. In the sensor area 492 vertical and 660 horizontal signal pixels, and the image

Contextual Info: Ce nter Tap & Doubler Assemblies U l t r a f a s t Recovery 804 Series Dim. A B C D E F G H Inches M illim e te r .660 MAX. .165-,175 DIA. 2.240-2.260 1.870-1.880 1.470-1.490 .33 4-,354 .115-.135 .302-.322 16.76 MAX. 4.19-4.45 DIA. 56.90-57.40 47.50-47.75

SH30D13A

Abstract: SH30G13A SH30F13A SH30H13A SH30J SH30L13A S-H-30H SH30F 012-FC TOSHIBA THYRISTOR
Contextual Info: 9 0 9 7 2 5 0 TOSHIBA D IS C R E T E /O P T O 39C 02 2 9 7 Hl B i TOSHIBA -CDISCRETE/OPTOï SH30L13A D 7e 2 - ^ / 7 SPEED THYRISTO R TDTTSSO DOO SET? 1 | ~ 800V 30A MAXIMUM RATINGS R A T IN G 200 300 400 500 600 800 300 400 500 600 720 960 30 47 660(60Hz)

Semikron MSK B 80

Abstract: RSM AH-16
Contextual Info: S1E D • Ô13bb71 GDDBTfll 2TT « S E K G s e MIKRG n SEMIKRON INC V rsm VVRMS V rrm V V 400 800 80 250 V BR VvRMS V V 1300 1700 500 660 M in ia t u r e B r i d g e R e c t if ie r s Id (Tamb = 45 °C) 2A M S K B . . - 1, 5 M SKa B . - 1, 5 Types ^ r?Jb -o s

660 TG

Abstract: B 660 TG 2764C 2462C 1703C
Contextual Info: 6-7. Chip LEDs 6-8. AIGalnP Ultra-High Intensity LEDs • A b s o lu te Maximum Ratings Ta=25°C Parameter ^Absolute Maximum Ratings (Ta=25°C) Ratings Parameter UnH If mA 30 If mA I fp mA 70 I fp mA 4 Vr V — 3 0 to + 8 5 Top V Vr Top r T s tg c c 30 1 00

k2785

Contextual Info: PRODUCT SELECTION LISTING li/M E X -U te s SSB-LX620XX SERIES 6 x2 0 m m LIG H T BAR, 3 LED CHIPS FEATURES A P P L IC A T IO N S O P T IO N S A V A IL A B L E • F o u r C o lo r O p tio n s • 3 a r L tg h t S o u rc e • B a c k L ig n tm g o f L e g e n d s

QFN 4x4 mm 20L

Abstract: JESD22-A114 RO4003 class 12 commerce 2011 T 2A 250V
Contextual Info: TGA4533-SM K-Band Power Amplifier Applications • • Point-to-Point Radio K-Band Sat-Com QFN 4x4 mm 20L Product Features • • • • • • • • Functional Block Diagram 20 Frequency Range: 21.2 – 23.6 GHz Power: 32 dBm Psat, 31 dBm P1dB Gain: 22 dB

Contextual Info: TGA4533-SM K-Band Power Amplifier Applications •  Point-to-Point Radio K-Band Sat-Com QFN 4x4 mm 20L Product Features         Functional Block Diagram Frequency Range: 21.2 – 23.6 GHz Power: 32 dBm Psat, 31 dBm P1dB Gain: 22 dB

operational amplifier power 1A

Contextual Info: TGA4533-SM K-Band Power Amplifier Applications • • Point-to-Point Radio K-Band Sat-Com QFN 4x4 mm 20L Product Features • • • • • • • • Functional Block Diagram 20 Frequency Range: 21.2 – 23.6 GHz Power: 32 dBm Psat, 31 dBm P1dB Gain: 22 dB

52E5

Abstract: TriQuint RO4003 TGA4530 "15 GHz" power amplifier 41dBm
Contextual Info: TGA4530-SM 17 - 21 GHz High Output TOI Packaged Amplifier Key Features • • • • • • • • Frequency Range: 17 - 21 GHz 41dBm Nominal Output TOI 21 dB Nominal Gain 29 dBm Nominal P1dB 12 dB Nominal Return Loss Bias 6 V @ 825 mA 4 x 4 QFN with 20 leads

Contextual Info: TGA4533-SM K-Band Power Amplifier Applications • • Point-to-Point Radio K-Band Sat-Com QFN 4x4 mm 20L Product Features • • • • • • • • Functional Block Diagram 20 Frequency Range: 21.2 – 23.6 GHz Power: 32 dBm Psat, 31 dBm P1dB Gain: 22 dB

Contextual Info: G M M 7 6 4 J 0 0 0 C T /T G -6 /7 L G S e m ic o n C o .,L td . 1,048,576 W O R D S x 64 BIT CMOS DYNAMIC RAM MODULE Description Features T h e GM M7641OOOCT/TG is an IM x 64 bits D ynam ic R A M M O D U L E w hich is assem bled 4 pieces o f 1M x 16bit D R A M s in 4 4 pin

gt 568

Abstract: rg33c
Contextual Info: 8 il L ig p ? a n Top r / T*tg / !H \ LEDTRONICS PART NO. BI-COLOR / TRI-COLOR LEDs \not93f T1 3mm , ABSOLUTE MAX. RATINGS Ta=25'C Pd mW Ifp mA If mA Vr V (5mm), 2 & 3 LEADS, RED/YELLOW/GREEN ELECTRO-OPTICAL CHARACTERISTICS Ta=25-C If mA typ Iv mcd m in /typ

Contextual Info: Advanced Product Information September 5, 2006 17-21 GHz High Output TOI Packaged Amplifier TGA4530-SM Key Features • • • • • • • • Primary Applications Measured Fixtured Data Sparameters dB Bias Conditions: Vd = 6V, Id = 825mA 25 20 15 10

"15 GHz" power amplifier 41dBm

Abstract: RO4003 TGA4530 41dBm
Contextual Info: Advanced Product Information September 14, 2006 17-21 GHz High Output TOI Packaged Amplifier TGA4530-SM Key Features • • • • • • • • Primary Applications Measured Fixtured Data Sparameters dB Bias Conditions: Vd = 6V, Id = 825mA 25 20 15

Contextual Info: 17-21 GHz High Output TOI Packaged Amplifier TGA4530-SM Key Features • • • • • • • • Primary Applications Measured Fixtured Data Sparameters dB Bias Conditions: Vd = 6V, Id = 825mA 25 20 15 10 5 -5 -10 -15 -20 -25 Gain IRL ORL • Point-to-Point Radio