660 SPICE Search Results

in6263

Abstract: coil gold detector circuit diagram OPA660 R2M diode transconductance amplifier spice OPA660AU REF200 2N2907 BUF601 OPA1013
Contextual Info: OPA 660 OPA660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● HIGH SLEW RATE: 3000V/µs ● VIDEO/BROADCAST EQUIPMENT ● COMMUNICATIONS EQUIPMENT ● LOW DIFFERENTIAL GAIN/PHASE

opa1013 equivalent

Abstract: AGC OPA660 2N2907 OPA1013 OPA660 OPA660AP OPA660AU REF200 CCII APPLICATION 0525P
Contextual Info: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION

AGC OPA660

Abstract: in6263 transconductance amplifier spice spice model 1n4148 DMF3068A operational amplifier discrete schematic 1n4148 spice model Group-Delay phase filter OTA operational transconductance amplifier pin configuration transistor 2n2907
Contextual Info: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION

IN6263

Abstract: AGC OPA660 R2M 45 2N2907 OPA1013 OPA660 OPA660AP OPA660AU REF200 sbos007
Contextual Info: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION

AGC OPA660

Abstract: in6263 operational amplifier discrete schematic bridge rectifier 1N4007 bl Common collector configuration basic R2M diode 1N4007 spice DMF3068A R2M 45 spice model 1n4148
Contextual Info: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION

in6263

Abstract: BUF601
Contextual Info: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION

2N2907

Abstract: OPA1013 OPA660 OPA660AP OPA660AU REF200 BUF601
Contextual Info: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION

opa660 spice

Abstract: ACF2101 equivalent SBOA047 BUF601
Contextual Info: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION

IN6263

Abstract: 1N4007 BL transconductance amplifier spice 2N2907 OPA1013 OPA660 OPA660AP OPA660AU REF200 2N2907 spice
Contextual Info: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION

Contextual Info: Metallized Impregnated Paper EMI Suppression Capacitors PME264 Series, Class X2, 660 VAC Overview Applications Multilayer metallized paper, encapsulated and impregnated in selfextinguishing material meeting the requirements of UL 94 V–0. For worldwide use in electromagnetic interference suppression

Contextual Info: AC Line EMI Suppression and RC Networks PME264 Series Metallized Impregnated Paper, Class X2, 660 VAC Overview Applications Multilayer metallized paper, encapsulated and impregnated in selfextinguishing material meeting the requirements of UL 94 V–0. For worldwide use in electromagnetic interference suppression

Contextual Info: AC Line EMI Suppression and RC Networks PME264 Series Metallized Impregnated Paper, Class X2, 660 VAC Overview Applications The PME264 Series is constructed of multilayer metallized paper encapsulated and impregnated in self-extinguishing material meeting the requirements of UL 94 V–0.

Contextual Info: AC Line EMI Suppression and RC Networks PME264 Series Metallized Impregnated Paper, Class X2, 660 VAC Overview Applications The PME264 Series is constructed of multilayer metallized paper, encapsulated and impregnated in self-extinguishing material meeting the requirements of UL 94 V–0.

IRHM9064

Abstract: IRHM93064 JANSF2N7424 JANSR2N7424
Contextual Info: PD - 91438C IRHM9064 JANSR2N7424 60V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9064 100K Rads (Si) IRHM93064 300K Rads (Si) RDS(on)

Contextual Info: PD - 91438C IRHM9064 JANSR2N7424 60V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9064 100K Rads (Si) IRHM93064 300K Rads (Si) RDS(on)

Contextual Info: AC Line EMI Suppression and RC Networks PME264 Series Metallized Impregnated Paper, Class X2, 660 VAC Overview Applications The PME264 Series is constructed of multilayer metallized paper, encapsulated and impregnated in self-extinguishing material meeting the requirements of UL 94 V–0.

Contextual Info: PD - 93858 IRHM9260 JANSR2N7426 200V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9260 100K Rads (Si) IRHM93260 300K Rads (Si) RDS(on)

P264EL104

Abstract: PME264 IEC60062
Contextual Info: AC Line EMI Suppression and RC Networks PME264 Series Metallized Impregnated Paper, Class X2, 660 VAC Overview Applications The PME264 Series is constructed of multilayer metallized paper, encapsulated and impregnated in self-extinguishing material meeting the requirements of UL 94 V–0.

Contextual Info: AC Line EMI Suppression and RC Networks PME264 Series Metallized Impregnated Paper, Class X2, 660 VAC Overview Applications The PME264 Series is constructed of multilayer metallized paper, encapsulated and impregnated in self-extinguishing material meeting the requirements of UL 94 V–0.

IRHM9064

Abstract: IRHM93064 JANSF2N7424 JANSR2N7424
Contextual Info: PD - 91438B IRHM9064 JANSR2N7424 60V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9064 100K Rads (Si) RDS(on) 0.05Ω ID QPL Part Number

JANSR2N7425

Abstract: IRHM9160 IRHM93160 JANSF2N7425
Contextual Info: PD - 91415E IRHM9160 JANSR2N7425 100V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9160 100K Rads (Si) 0.073Ω ID QPL Part Number

JANSR2N7425

Abstract: IRHM9160 IRHM93160 JANSF2N7425 35AA L082
Contextual Info: PD-91415G IRHM9160 JANSR2N7425 100V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9160 100K Rads (Si) 0.073Ω IRHM93160 300K Rads (Si) 0.073Ω

Contextual Info: PD-91415G IRHM9160 JANSR2N7425 100V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9160 100K Rads (Si) 0.073Ω IRHM93160 300K Rads (Si) 0.073Ω

IRHM9160

Abstract: IRHM93160 JANSF2N7425 JANSR2N7425
Contextual Info: PD - 91415F IRHM9160 JANSR2N7425 100V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9160 100K Rads (Si) 0.073Ω IRHM93160 300K Rads (Si) 0.073Ω