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CEM9433 Abstract: ON 5134 Contextual Info: AUGUST 1999 P-Channel Enhancement Mode Field Effect Transistor FEATURES • - 2 0 V , - 5 . 4 A , Rds on =65itiQ Rds(on)=1 OOmQ @ V gs =-4.5V. D @ V gs =-2.5V. D D D • Super high dense cell design for extremely low R ds(on). • High power and current handing capability.	OCR Scan	65itiQ CEM9433 CEM9433 ON 5134	PDF

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CEM9433

Abstract: ON 5134
Contextual Info: AUGUST 1999 P-Channel Enhancement Mode Field Effect Transistor FEATURES • - 2 0 V , - 5 . 4 A , Rds on =65itiQ Rds(on)=1 OOmQ @ V gs =-4.5V. D @ V gs =-2.5V. D D D • Super high dense cell design for extremely low R ds(on). • High power and current handing capability.

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65itiQ CEM9433 CEM9433 ON 5134

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