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Magnum Microwave mixer

Abstract: magnum microwave
Contextual Info: MAGNUM MICROWAVE CÔRP h'i M13T L: R: I: De | s 7SS73D ÛGD0G2S DOUBLE BALANCED MIXER .01— 65 MHz .01— 65 MHz DC— 65 MHz LOW CONVERSION LOSS HIGH ISOLATION MINIATURE TO-8 HERMETIC PACKAGE GUARANTEED SPECIFICATIONS' 1 PARAMETER MIN. TYP. RF LO IF 10 K H z -65 MHz

UC38xx

Abstract: UC3861-64
Contextual Info: IN T E G R A T E D C IR C U IT S U N IT R O D E Resonant-Mode Power Supply Controllers UC1861/64/65 UC2861/64/65 UC3861/64/65 PRELIMINARY FEATURES DESCRIPTION • Controls Zero Current Switched ZCS or Zero Voltage Switched (ZVS) quasiresonant converters

Contextual Info: ADC12C080 ADC12C080 12-Bit, 65/80 MSPS A/D Converter Texa s In s t r u m e n t s Literature Number: SNAS379B a l Semiconductor ADC12C080 12-Bit, 65/80 MSPS A/D Converter General Description Features The ADC12C080 is a high-performance CMOS analog-todigital converter capable of converting analog input signals

Contextual Info: AD C14C 080 ADC14C080 14-Bit, 65/80 MSPS A/D Converter Te x a s In s t r u m e n t s Literature Number: SNAS375B Semiconductor ADC14C080 14-Bit, 65/80 MSPS A/D Converter General Description Features The ADC14C080 is a high-performance CMOS analog-todigital converter capable of converting analog input signals

Contextual Info: 67C4503-35/50/65/80 Deep First-in First-out FIFO 2048x9 C M O S Memory DISTINCTIVE CHARACTERISTICS Retransmit capability Expandable in both width an djlepth Increased noise immunity for XI-CMOS threshold RAM based FIFO 2048x9 organization Cycle tim es of 45/65/80/100 nanoseconds

S10601

Contextual Info: am tec M M S-106-01-F-SH M M S-108-01-T-SV M M S-120-01-T-DV im M a te s w it h : Materials: Insulate r M aterial: Black Liquid Crystal Polym er C ontact Material: Phosphor Bronze Operating Tem p Range: -65=C to +125°C w ith Gold -65°C to + 1053C w ith Tin

AM7203

Contextual Info: a Am7203-25/35/50/65/80 CM O S First-in First-out FIFO Advanced Micro Devices 2048x9-Bit Buffer DISTINCTIVE CHARACTERISTICS • RAM based FIFO • Status fla g * - full, half-full, empty • 2048x9 organization • Retransmit capability • Cycle times of 35/45/65/80/100 nanoseconds

4735A diode

Contextual Info: International ZM4728 S em ico n d ucto r , /ñ c . thru 1.0 WATT ZENER DIODE ZM4764 LEA D LESS PACKAGE FOR S UR FAC E MOUNT DOUBLE SLUG C O N STR U C TIO N MAXIMUM RATINGS Operating Temperature: -65 °C to +200 °C Storage Temperature: -65 °C to +200 °C

TMC2010

Abstract: CY7C510 2210J0 y12 t 930 TDC1010 tmc2110
Contextual Info: TRW TMC2210 C M O S Multiplier-Accumulator Features 1 6 x 1 6 Bit, 45, 55, 65, 80, 95ns • 45, 55, 65, 80 Or 95ns Multiply-Accumulate Time The TMC2210 is a high-speed 1 6 x1 6 bit digital multiplier-accumulator which is available in speed bins of 45, 55, 65, 80 or 95ns. Input data may be specified as

DIODE 1N827

Contextual Info: IN T E R N A T IO N A L •=1000370 0000007 T 40 « I S E M 41E S EM IC O N D JEDEC REGISTERED, TEMPERATURE COMPENSATED VOLTAGE REFERENCE DIODES DO-7 Package MAXIMUM RATINGS MECHANICAL Operating Temperature: -65°Cto+200°C Herm etically Sealed DO-35 Storage Temperature: -65°C to +200°C

Contextual Info: m 2N2405 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2405 is Designed for General Purpose Amplifier, and Switching Applications. MAXIMUM RATINGS 1.0 A lc 90 V V ce P d is s 1.0 W @ TA = 25 °C P d is s 5.0 W @ Tc = 25 °C T j -65 °C to +200 °C T stg -65 °C to +200 °C

824-560

Contextual Info: Typen / Types 824-560, 824-880 Drahtbrücken Jumper wires F [mm2] R ['S»] C 0,6 0,28 0,68 65 0,8 0,50 0,38 65 Typ/Type 0 d [mm] 824-560 824-880 Verpackung / Packaging: 824-560 10.000 St./Spule pcs/reel 50 824-880 6.000 St./Spule pcs/reel (50) Bestellbeispiel / Ordering example:

2N3508

Contextual Info: 2N3508 SILICON NPN TRANSISTOR DESCRIPTION: PACKAGE STYLE TO- 46 The 2N3508 is Designed for General Purpose Very Fast Switching Applications MAXIMUM RATINGS 500 mA p e a k 20 V P d is s 2.0 W @ T e # 25 0 C Tj -65 0 C to +200 ° C Ts t g -65 0 C to +200 0 C

pd6523

Abstract: PD65-31MC 30-90VDC
Contextual Info: 50-65 WATT DC TO DC CONVERTERS PROTEK DE S CR I PT IO N PD65 SERIES RoHS The PD65 series of DC/DC converters provide 50 to 65 watts of continuous output power. Available in three standard input range of 10-30VDC, 20-60VDC and 30-90VDC, they are ideal for a variety of applications including telecoms,

2N2273

Contextual Info: 2N2273 GERMANIUM PNP TRANSISTOR DESCRIPTION: The 2N2273 is Designed for General Purpose Switching, and VHF Amplifier Applications. PACKAGE STYLE TO-18 MAXIMUM RATINGS < o m Ie p d is s 1OO mA -15 V 15O mW @ Ta $ 25 °C Tj -65 0C to +1OO 0C Ts tg -65 0C to +1OO 0C

2N3033

Contextual Info: 2N3033 SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3033 is Designed for Avalanche-Mode Very Fast Switching Applications. PACKAGE STYLE TO-18 MAXIMUM RATINGS 200 mA < o m Ie 100 V p d is s 1.0 W @ Te = 25 °C Tj -65 0C to '200 0C Ts t g -65 0C to '200 0C

Contextual Info: I n ter n a tio n a l 1N3305 S e m ic o n d u c to r , I n c . thru 50 WATT ZENER DIODES 1N3350 MAXIMUM RATINGS Operating Tem perature: Storage Tem perature: DC Power Dissipation: -65 °C to +175 °C -65 °C to +175 °C 50 Watts at 75 °C Power Derating: 0.5 W /°C above 75 °C

pt21

Abstract: SPS-281 PT-20 PT-23F PT-23F-HLD ST-24F ST-302 NJL811B sps 606 SPS-103
Contextual Info: - 28 4 - € - 200 2 00 5 _ r „ = 2 5 ’C h’— u S.i i is k Ev VCE VcE sit E Ic tr Ic (V ) max iVi mW cm!; (lx) (m A ) tvp 'nnr typ [fisi 1m A ) 10 1.4 1000 65 5 800 1.4 5 10 1000 800 65 _ 10 1000 1 65 1.4 800 2 00 10 P T -7 L 5 - 2 00 10 1.4 - S T -2 4 F

Contextual Info: F-204 HSEC8-130-01-S -D -E M 2 ,80Um l-S SPECIFICATIONS For complete specifications see www.samtec.com?FISEC8-EM Insulator Material: Liquid Crystal Polymer Contact: BeCu Current Rating: Testing Now! Operating Temp: -65°C to +125°C Plating: Au over 50g" 1,27pm Ni

diode germanium 1n270

Abstract: 1N270 diode 1N270 "Germanium Diode" Germanium Diode 1n270
Contextual Info: 1N270 asii GERMANIUM DIODE DESCRIPTION: PACKAGE STYLE DO-7 The 1N270 is Designed for General Purpose Small Signal, and Switching Applications. MAXIMUM RATINGS 200 mA If p e a k Vr 100 V Pd is s 80 mW @ Te # 25 °C Tj -65 0C to +85 0C Ts t g -65 0C to +85 0C

1N4396

Abstract: diode 1n4396
Contextual Info: 1N4386 SILICON MULTIPLIER VARACTOR DIODE DESCRIPTION: PACKAGE STYLE DO- 4 The 1N4396 is a High Power Silicon Multiplier Varactor Diode. MAXIMUM RATINGS If 200 mA Vr 250 V Pd is s 20 W @ Te = 25 °C Tj -65 0C to +150 0C Ts t g -65 0C to +175 0C 0 jc 5.0 0C/W

1N5469A

Contextual Info: 1N5469A asii TUNING VARACTOR DESCRIPTION: The 1N5469A is a Silicon Abrupt Junction Tuning Varactor Diode. PACKAGE STYLE D0-204AA Millimeters MAXIMUM RATINGS VR 30 V If 100 mA Pd is s 400 mW @ Ta = 25 °C Tj -65 °C to +175 °C Ts t g -65 °C to +200 °C CHARACTERISTICS t c=25 0c

Contextual Info: 2 Way-0°/180 Power Splitter/Combiner PMT-1-75 Typical Performance Curves Insertion Loss Isolation 65 5.2 Insertion Loss S-1 Insertion Loss S-2 Insertion Loss J-1 Insertion Loss J-1 Insertion Loss dB 4.8 4.6 4.4 60 Isolation 1-2 55 Isolation S-J 50 Isolation (dB)

Contextual Info: H S E C 8 -1 3 0 -0 1 -S -D V -A SPECIFICATIONS For complete specifications see www.samtec.com?HSEC8 Insulator Material: Black Liquid Crystal Polymer Contact: BeCu Current Rating: Testing Now! Operating Temp -65°C to +125°C Plating: Au over 50p" 1,27pm Ni