64KX4 2 CS Search Results

CYM1830HD-55C

Abstract: CYM1830HD-55MB
Contextual Info: CYM1830 CYPRESS SEMICONDUCTOR 64K x 32 StaticRAM Module Features Functional Description • High-density 2-megabit SRAM module The C YM 1830is a high-performance 2-megabit staticRAM module organized as 64K words by 32 bits. This module isconstructed from eight 64Kx4 SRAMs in LCC

Contextual Info: KM64258C CMOS SRAM 64Kx4 Bit With UE High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12, 15, 20 ns (Max.) • Low Power Dissipation Standby (TTL) : 40 mA (Max.) (CMOS) : 2 mA (Max.) Operating KM64258C-12 : 150 mA (Max.) KM64258C-15 : 140 mA (Max.)

Contextual Info: K6E0804C1E-C CMOS SRAM Document Title 64Kx4 Bit with OE High Speed Static RAM(5V Operating). Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Aug. 1. 1998 Preliminary Rev. 1.0 Release to Final Data Sheet. Nov. 2. 1998 Final Draft Data

Contextual Info: KM64258C CMOS SRAM 64Kx4 Bit With UE High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15, 20 ns (Max.) • Low Power Dissipation Standby (TTL) : 40 mA (Max.) (CMOS) : 2 mA (Max.) Operating KM64258C-12 :150 mA (Max.) KM64258C-15 : 140 mA (Max.)

Contextual Info: KM64258E CMOS SRAM Document Title 64Kx4 Bit with OE High Speed Static RAM(5V Operating). Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary. Aug. 1. 1998 Preliminary Rev. 1.0 Release to Final Data Sheet. Nov. 2. 1998

KM64258CJ-20

Contextual Info: KM64258C CMOS SRAM 64Kx4 Bit With OE High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 12, 15, 20 ns (Max.) • Low Power Dissipation Standby (TTL) : 40 mA (Max.) (CMOS) : 2 mA (Max.) Operating KM64258C-12 : 150 mA (Max.) KM64258C-15 : 140 mA (Max.)

Contextual Info: KM64258C CMOS SRAM 64Kx4 Bit With OE High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12, 15, 20 ns (Max.) • Low Power Dissipation Standby (TTL) : 40 mA (Max.) (CMOS) : 2 mA (Max.) Operating KM64258C-12 : 150 mA (Max.) KM64258C-15 :140 mA (Max.)

Contextual Info: SM33264 2MBit 64Kx 32 CMOS Fast SRAM Module General Description Features The SM33264 is a high performance, 2-megabit static RAM module organized as 64K words by 32 bits, in a 64-pin, single-in-line memory module (SIMM) package. The module utilizes eight 64Kx4 high speed static RAMs

536X4

Contextual Info: SHARP ELEK/ F1ELEC a ia c m a a a c m t s 3 • srpj HfaE D » IV PRELIMINARY T -46-23-10 C M O S 256K 64K X4 Static RAM LH52255A 7 ^ -2 3 ~ /0 LH52255A ■ CMOS 256K (64KX4) Static RAM Pin Connections Description The LH52255A is a high speed 256K bit static

64kx4 DRAM

Abstract: marking WMM IC-012 MT42C4064 T-46 00024B1 TS PQ4 24
Contextual Info: MICRON TECHNOLOGY INC 3ÔE D . li^ .i m blllSM^ 000247b b IMRN r~EV ¿ -2 3 - 3 ? n if i» g is is g l ¿ •ù -i 64Kx4 DRAM WITH 256 X 4 SAM VRAM • • • • Industry standard pinout, tim ing and functions H igh performance CMOS silicon gate process

Contextual Info: WHITE M ICROELECTRONICS 64Kx4 SRAM WPS64K4-XSJX PRELIMINARY* PLASTIC PLUS FEATURES • Access Times 15,17, 20nS PIN C O N F IG U R A T IO N TO P VIEW NCC 1 AOC 2 A1C 3 A 2|Z 4 A3 d 5 A 4 [I 6 A5d 7 A6 □ B W ■ Standard Commercial Off-The-Shelf COTS Memory

ics 0741

Contextual Info: m WHITE /MICROELECTRONICS 64Kx4 SRAM WPS64K4-XSJX PRELIMINARY* PLASTIC PLUS FEATURES • Access Times 1 5 .1 7 ,20nS PIN CONFIGURATION TOP VIEW N C Z 1 A O [I 2 A id 3 A2C 4 A3 E l 5 A 4 (Z 6 A 5 [I 7 W 28 I Vcc 27 □ A15 26 □ A14 25 □ A13 24 □ A12

Contextual Info: KM64B261A BiCMOS SRAM 64Kx4 Bit With UE High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • F as t A c c e s s T im e 6, 7 , 8 ns (M a x .) T h e K M 6 4 B 2 6 1 A is a 2 6 2 ,1 4 4 -b it h ig h -s p e e d S ta tic • L o w P o w e r D iss ip a tio n

s-1311

Contextual Info: C Integrated DeviceTechnology, Inc IDT 7M656L 256K CMOS STATIC RAM MODULE FEATURES: DESCRIPTION: • H ig h -d e n sity 2 5 6 K -b it C M O S s ta tic RAM m o du le • C u sto m e r-co n fig u re d to 16Kx16, 32K x8 o r 64Kx4 • Fast a cce ss tim e s T h e ID T7M 656 Is a 256 K -b it h ig h -s p e e d C M O S sta tic RAM c o n ­

128kx8

Abstract: EDI88130 32 PIN edi84256
Contextual Info: moi Selector Guide ELECTRONIC DESIGNS INC. Density Oraanization Part No. Speed ns Max Current (mAl Packaae Paae x32 Flash 4 Megabits 4 Megabits 128KX32 4 Megabits 4 Megabits 128KX32 128Kx32 EDI7C32128C-JM EDI7M32128C-GB 120-200 120-200 250 250 68 lead JLCC

edi8832

Abstract: EDI8834
Contextual Info: ^EDI Static RAM Selector Guide Electronic D««lgna Inc. Static RAMs for High Performance Systems, Commercial and Miilitary; Monolithic and Modules Electronic Designs Incorporated is a lead­ ing international supplierof high-performance, high-reliability Static RAM products to all seg­

AS27C256-20JM

Abstract: WF1M32B-100G2UM3 qp7c199 ACT-S512K32N-017P7Q QP7C1009B-20DMB WF1M32B-120G2UM3 IDT71256L25TCB AS5C2008 AS8S512K32Q 57C256F-55
Contextual Info: Part Number 1 of 66 Config Device Type Volt Packages Micross Part Number SMD 5962- 57C256F-55 32Kx8 UVEPROM 5V 57C256F-55 32Kx8 UVEPROM 5V 57C256F-70 32Kx8 UVEPROM 5V 57C256F-70 32Kx8 UVEPROM 5V ACT-E128K32C120P7Q 128Kx32 EEPROM 5V ACT-E128K32C140P7Q 128Kx32 EEPROM 5V

3U53

Abstract: A93V
Contextual Info: This is a partial data sheet. For complete data sheet, see Section 8 , Modules. _ CYM1830 SEMICONDUCTOR 64K x 32 Static RAM Module Features Functional Description enable W E * inputs are b o th L O W D a ta • High-density 2-megabit SRAM module

Contextual Info: CYM1626 PRELIMINARY CYPRESS SEMICONDUCTOR 64K x 16 Static RAM Module Features Functional Description • High-density 1M bit SRAM Module The CYM1626 is a high performance 1Mbit Static RAM module organized as 64K words by 16 bits. This module is con­ structed from four 16K x 4 SRAMs

TAG 8822

Contextual Info: QUALITY SEMICONDUCTOR IMO, Q S 8821 Q S 8822 ADVANCE INFORMATION High-Speed CMOS 64Kx4 SRAM with Separate I/O Q FEATURES/BENEFITS • • • • • • High Speed Access and Cycle times 15ns/20ns/25ns Commercial 20ns/25ns/35ns Military TTL compatible I/O

9660t

Abstract: LH521008
Contextual Info: SHARP b OE CORP D • Ô1ÔD7TÔ DDDTME? 302 «SRPJ 'T - H C - 2 3 - / O LH101504 LH101510 . R E L I M I N A Ü 3 H 1 3 C5 WF A,s Au Ai 3 R Y High-Speed BiCMOS 1M 1M xi ECL Static RAM ■ Description ■ The LH101504/LH101510 is a 256K/1M-bit high speed

Contextual Info: SMART SM332S4AON5ZUUU Modular Technologies January 22, 1998 256KByte 64K x 32 SRAM Module - 64Kx4 based 72-pin SIMM Features Part Numbers • • • • • • • • SM332S4AON5ZU15 SM332S4AON5ZU20 SM332S4AON5ZU25 Standard : JEDEC Access Time : 15/20/25ns

Contextual Info: QS86446 a Q High-Speed CMOS 64Kx4 SRAM with Output Enable QS86446 FEATURES/BENEFITS • High Speed Access and Cycle times • 12ns/15ns Commercial • 15ns/20ns Military • TTL compatible I/O • Low power, high-speed QCMOS technology • Military product compliant to MIL-STD-883, Class B

LH5160N

Abstract: LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55
Contextual Info: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Features Functional Description The IH 5911, LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.