64K X 1 Search Results

IDT7M812

Contextual Info: IN T E G R A T E D DEVI CE 3ÛE D • 4ÔES771 Q0G7G1M fl ■ ID T 23-14 IDT7M812 IDT7M912 64K x 8 64K x 9 CMOS STATIC RAM MODULE FEATURES: DESCRIPTION: • High-density 512K CMOS static RAM module • 64K x 8 IDT7M812 or 64K x 9 (IDT7M912) configuration

CY14B101LA-SZ45XI

Abstract: CY14B101LA-SZ25XI
Contextual Info: CY14B101LA CY14B101NA 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14B101LA) or 64K x 16 (CY14B101NA) ■ Hands off Automatic STORE on Power Down with only a Small

Contextual Info: DPS1037 Dense-Pac Microsystems, Inc. 64K X 16 CMOS SRAM MODULE O DESCRIPTION: The DPS1037 is a 64K X 16 high-speed, low-power static RAM module comprised of sixteen 64K X 1 monolithic SRAM's, and decoupling capacitors surface mounted on a co-fired ceramic substrate having

MX27C1100

Contextual Info: Introduction Selection Guide MX27C1100/27C1024 1M-BIT 128K x 8/64K x 16 CMOS EPROM FEATURES • 64K x 16 organization(MX27C1024, JEDEC pin out) • 128K x 8 or 64K x 16 organization(MX27C1100, ROM pin out compatible) • +12.5V programming voltage • Fast access time: 55/70/85/100/120/150 ns

Contextual Info: Í D P M 7Dense-Pac Microsystems. Inc. 0 DPS1025 64K X 16 CMOS SRAM MODULE NOT RECOMMENDED FOR NEW DESIGNS D ESCRIPTIO N : The DPS1025 is a 64K X 8 high-speed, low-power static RAM module comprised of sixteen 64K X 1 monolithic SRAM 's, and decoupling capacitors

IBM043611ULAB4M

Contextual Info: IBM043611ULAB4M x 1612/10, 3.3VMMDM15DSU-021045023. Preliminary IBM043611ULAB IBM041811ULAB 32K x 36 & 64K x 18 SRAM Features • 32K x 36 or 64K x 18 organizations • Registered outputs • 0.45 Micron CMOS technology • Asynchronous Output Enable and Power Down

Contextual Info: ► DPS1026 64K X 16 CMOS SRAM MODULE Dense-Pac Microsystems, Inc. 0 NOT RECOMMENDED FOR NEW DESIGNS DESCRIPTION: The DPS1026 is a 64K X 16 high-speed, low-power static RAM module comprised of sixteen 64K X 1 monolithic SRAM 's, and decoupling capacitors surface mounted on a thick film ceramic substrate.

Contextual Info: DPS384 □PM Dense-Pac Microsystems, Inc. 64K X 6 CMOS SRAM MODULE NOT RECOMMENDED FOR NEW DESIGNS D ESC R IPT IO N : The DPS384 is a 64K X 6 high-speed, low-power static RA M module comprised of six 64K X 1 m onolithic SR A M 's, and decoupling capacitors

Contextual Info: □PM DPS8645 Dense-Pac Microsystems, Inc. 64K X 4 CMOS SRAM MODULE O NOT RECOMMENDED FOR NEW DESIGNS DESCRIPTION: The DPS8645 is a 64K X 4 high-speed, low-power static RAM module comprised of four 64K X 1 monolithic SRAM's, and decoupling capacitors surface mounted on a single inline thick film ceramic

SA82A

Abstract: IBM043610ULAB4M SA73A
Contextual Info: IBM043610ULAB4M x 1612/10, 3.3VMMDM15DSU-021044922. Preliminary IBM041810ULAB IBM043610ULAB 32K X 36 & 64K X 18 SRAM Features • 32K x 36 or 64K x 18 Organizations • 0.45 Micron CMOS Technology • Synchronous Flow Thru Mode of Operation with Self-Timed Late Write

power supply 350W

Contextual Info: IBM043611TLAB4M x 1612/10, 3.3VMMDM15DSU-021045122. Preliminary IBM041811TLAB IBM043611TLAB 32K x 36 & 64K x 18 SRAM Features • 32K x 36 or 64K x 18 Organizations • Common I/O • 0.45 Micron CMOS Technology • Asynchronous Output Enable and Power Down

9l reset

Abstract: CY7C0852V-133AC CY7C09289V CY7C09369V CY7C09379V
Contextual Info: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM CY7C0851V/CY7C0852V CY7C0831V/CY7C0832V 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM Features Functional Description

Contextual Info: □PM DPS8644 Dense-Pac Microsystems. Inc. 64K X 4 C M O S SRAM MODULE O NOT RECO M M EN DED FOR NEW DESIGNS DESCRIPTIO N: The D P S8644 is a 64K X 4 high-speed, low-power static R A M module comprised of four 64K X 1 monolithic SR A M 's, and decoupling capacitors

Contextual Info: EbE D LOGIC DEVICES INC WÈ SSbSTQS O O O I H G LMM624 1 Megabit 64K x 16-bit Static RAM Module DESCRIPTION FEATURES □ IM egabit (64K x 16-bit) Static RAM M odule □ Utilizes 16 L7C187 64K x 1 Static RAMs □ A dvanced CMOS Technology Q H igh Speed, Low Pow er

Contextual Info: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM CY7C0837V CY7C0830V/CY7C0831V CY7C0832V/CY7C0833V PRELIMINARY FLEx18TM 3.3V 32K/64K/128K/256K/512K x 18 Synchronous Dual-Port RAM

IBM041813PPL64K

Contextual Info: 64K x 18Burst Pipeline Pentium , PLCC package. IBM041813PPL 64K X 18 BURST PIPELINE SRAM Features • 64K x 18 Organization • 0.5µ CMOS Technology • Registered Addresses, Data Ins, Control signals, and Outputs • Asynchronous Output Enable

SA73A

Contextual Info: . Preliminary IBM043611RLAB IBM041811RLAB 32K X 36 & 64K X 18 SRAM Features • 32K x 36 or 64K x 18 Organizations • Registered Outputs • 0.5 Micron CMOS Technology • Asynchronous Output Enable and Power Down Inputs • Synchronous Pipeline Mode Of Operation with

A12L

Abstract: A13L IDT707288 707288
Contextual Info: HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks

Contextual Info: Integrated Device Technology, Inc. HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks

ci 4077

Abstract: A12L A13L IDT70V7288
Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks

Contextual Info: I * / Integrated Device Technology, Inc. HIGH-SPEED 64K X 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks

Contextual Info: IBM041811TLAB IBM043611TLAB Preliminary 32K x 36 & 64K x 18 SRAM Features • 32K x 36 or 64K x 18 Organizations • Common I/O • 0.45 Micron CMOS Technology • Asynchronous Output Enable and Power Down Inputs • Synchronous Pipeline Mode of Operation with

IDT8M624

Abstract: 8M624 8M624S 64k dynamic RAM 8M612S100 IDT8M624S
Contextual Info: Integrated Device Technology, Inc. 64K x 16 32K x 16 CMOS STATIC RAM MODULE FEATURES: • High-density CMOS static RAM module 64K x 16 organi­ zation IDT8M624S or 32K x 16 option (IDT8M612S) • Fast access time: — Commercial - 25ns (max.) — Military - 35ns (max.)

Contextual Info: IBM043611 ULAB IBM041811 ULAB Prelim inary 32K x 36 & 64K x 18 SRAM Features • 32K x 36 or 64K x 18 organizations • Registered outputs • 0.45 Micron CMOS technology • Asynchronous Output Enable and Power Down Inputs • Synchronous pipeline mode of operation with