64K X 1 Search Results

CY14B101LA-SZ45XI

Abstract: CY14B101LA-SZ25XI
Contextual Info: CY14B101LA CY14B101NA 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14B101LA) or 64K x 16 (CY14B101NA) ■ Hands off Automatic STORE on Power Down with only a Small

MX27C1100

Contextual Info: Introduction Selection Guide MX27C1100/27C1024 1M-BIT 128K x 8/64K x 16 CMOS EPROM FEATURES • 64K x 16 organization(MX27C1024, JEDEC pin out) • 128K x 8 or 64K x 16 organization(MX27C1100, ROM pin out compatible) • +12.5V programming voltage • Fast access time: 55/70/85/100/120/150 ns

IBM043611ULAB4M

Contextual Info: IBM043611ULAB4M x 1612/10, 3.3VMMDM15DSU-021045023. Preliminary IBM043611ULAB IBM041811ULAB 32K x 36 & 64K x 18 SRAM Features • 32K x 36 or 64K x 18 organizations • Registered outputs • 0.45 Micron CMOS technology • Asynchronous Output Enable and Power Down

Contextual Info: ► DPS1026 64K X 16 CMOS SRAM MODULE Dense-Pac Microsystems, Inc. 0 NOT RECOMMENDED FOR NEW DESIGNS DESCRIPTION: The DPS1026 is a 64K X 16 high-speed, low-power static RAM module comprised of sixteen 64K X 1 monolithic SRAM 's, and decoupling capacitors surface mounted on a thick film ceramic substrate.

Contextual Info: □PM DPS8645 Dense-Pac Microsystems, Inc. 64K X 4 CMOS SRAM MODULE O NOT RECOMMENDED FOR NEW DESIGNS DESCRIPTION: The DPS8645 is a 64K X 4 high-speed, low-power static RAM module comprised of four 64K X 1 monolithic SRAM's, and decoupling capacitors surface mounted on a single inline thick film ceramic

power supply 350W

Contextual Info: IBM043611TLAB4M x 1612/10, 3.3VMMDM15DSU-021045122. Preliminary IBM041811TLAB IBM043611TLAB 32K x 36 & 64K x 18 SRAM Features • 32K x 36 or 64K x 18 Organizations • Common I/O • 0.45 Micron CMOS Technology • Asynchronous Output Enable and Power Down

9l reset

Abstract: CY7C0852V-133AC CY7C09289V CY7C09369V CY7C09379V
Contextual Info: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM CY7C0851V/CY7C0852V CY7C0831V/CY7C0832V 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM Features Functional Description

Contextual Info: EbE D LOGIC DEVICES INC WÈ SSbSTQS O O O I H G LMM624 1 Megabit 64K x 16-bit Static RAM Module DESCRIPTION FEATURES □ IM egabit (64K x 16-bit) Static RAM M odule □ Utilizes 16 L7C187 64K x 1 Static RAMs □ A dvanced CMOS Technology Q H igh Speed, Low Pow er

Contextual Info: MICRON I 64K TECHNOLOGY, INC. SYNCHRONOUS SRAM 6 4 K x 3 2 /3 6 S R A M +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • • Configurations 64K x 32 64K x 36 100-Pin TQFP SA-1

A12L

Abstract: A13L IDT707288 707288
Contextual Info: HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks

Contextual Info: Integrated Device Technology, Inc. HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks

Contextual Info: IBM041811TLAB IBM043611TLAB Preliminary 32K x 36 & 64K x 18 SRAM Features • 32K x 36 or 64K x 18 Organizations • Common I/O • 0.45 Micron CMOS Technology • Asynchronous Output Enable and Power Down Inputs • Synchronous Pipeline Mode of Operation with

Contextual Info: IBM043611 ULAB IBM041811 ULAB Prelim inary 32K x 36 & 64K x 18 SRAM Features • 32K x 36 or 64K x 18 organizations • Registered outputs • 0.45 Micron CMOS technology • Asynchronous Output Enable and Power Down Inputs • Synchronous pipeline mode of operation with

Contextual Info: IBM043610ULAA IBM041810ULAA Prelim inary 32K X 36 & 64K X 18 SRAM Features • Asynchronous Output Enable and Power Down Inputs • 32K x 36 or 64K x 18 Organizations • 0.45 Micron CMOS Technology • Synchronous Flow Thru Mode Of Operation with Self-Timed Late Write

CY14B101NA_ZS45XI

Abstract: CY14B101NA-ZS25XI CY14B101LA-SZ45XI CY14B101LA-SZ25XI
Contextual Info: CY14B101LA, CY14B101NA 1 Mbit 128K x 8/64K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14B101LA) or 64K x 16 (CY14B101NA) ■ Hands off Automatic STORE on Power Down with only a Small

Contextual Info: Integrated D e v ile Technology, li e . HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks

IBM041812PPL64K

Contextual Info: 64K x 18Burst Pentium , PLCC package. IBM041814PPLB 64K X 18 BURST SRAM Features • 64K x 18 Synchronous Burst Mode SRAM • 0.5µ CMOS Technology • Synchronous Burst Mode of Operation Compatible with PowerPCTM Processors • Single +3.3V ± 5% Power Supply and Ground

A13L

Abstract: IDT70V7288 ci 4077
Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L Features ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip

Contextual Info: BiCMOS STATIC RAM 256K 64K x 4-BIT PRELIMINARY IDT61B298 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 4 BiCEMOS Static RAM • High-speed address / chip select time — Commercial: 12/15/20ns — Military: 15/20ns • Output Enable

CYM1622

Abstract: CYM1622PV-15C CYM1622PV-20C 64k x 4 sram 24 PIN VDIP VDIP
Contextual Info: 1CY M16 22 CYM1622 64K x 16 Static RAM Module Features is constructed using four 64K x 4 static RAMs mounted onto a vertical substrate with pins. The pinout of this module is compatible with another Cypress module CYM1611 to maximize system flexibility.

27C220

Abstract: 27C210 27C240 NM27C210
Contextual Info: NM27C210 1,048,576-Bit 64K x 16 High Performance CMOS EPROM General Description Features The NM27C210 is a high performance Electrically Programmable UV erasable ROM (EPROM). It contains 1,048,576 bits configured as 64K x 16 bit. It is offered in both erasable versions for

32-PIN RAD-PAK FLAT PACKAGE

Contextual Info: 27C512T 512K 64K x 8-Bit OTP EPROM A5-A9 1024 x 1022 Memory Matrix x-Decoder A12-A16 I/O0 Y- Gating Input Data Control I/O15 Y - Decoder CE OE A0-A4 A10-A11 PGM VCC VPP VSS H H : High Threshhold Inverter FEATURES: DESCRIPTION: • 64K x 8-bit OTP EPROM organization

Contextual Info: |V |IC = R O N 64K SYNCHRONOUS SRAM X M T 58L C 64K 16/18C5 16/18 S Y N C B U R S T SRAM 64K x 16/18 SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • OPTIONS 3.3V I/O PIPELINED DCD SRAM

A416316B

Contextual Info: A416316B Series Preliminary 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue November 15, 2000 Preliminary November, 2000, Version 0.0