64K X 1 Search Results
64K X 1 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy | 
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| MR27C64-25/B | 
 
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27C64 - 64K (8K x 8) EPROM | 
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| MD27C64-35/B | 
 
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27C64 - 64K (8K x 8) EPROM | |||
| MR27C64-20/B | 
 
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27C64 - 64K (8K x 8) EPROM | 
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| MD27C64-15/B | 
 
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27C64 - 64K (8K x 8) EPROM | 
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| MD27C64-20/B | 
 
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27C64 - 64K (8K x 8) EPROM | 
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64K X 1 Price and Stock
Murata Manufacturing Co Ltd GC355XD7LQ564KX17LCAP CER 0.56UF 630V X7T 2220 | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
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GC355XD7LQ564KX17L | Cut Tape | 396 | 1 | 
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GC355XD7LQ564KX17L | Reel | 16 Weeks | 500 | 
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GC355XD7LQ564KX17L | 294 | 
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GC355XD7LQ564KX17L | 500 | 
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GC355XD7LQ564KX17L | 17 Weeks | 500 | 
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GC355XD7LQ564KX17L | 500 | 
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KEMET Corporation C1812X664KCRLCAUTOMultilayer Ceramic Capacitors MLCC - SMD/SMT 500V 0.66uF X7R 1812 10% AEC-Q200 | 
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C1812X664KCRLCAUTO | 2,107 | 
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KEMET Corporation C2220X164KFRLCAUTOMultilayer Ceramic Capacitors MLCC - SMD/SMT 1500V .16uF X7R 2220 10% AEC-Q200 | 
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C2220X164KFRLCAUTO | 1,336 | 
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Infineon Technologies AG XMC4200F64K256BAXQSA1ARM Microcontrollers - MCU XMC4000 | 
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XMC4200F64K256BAXQSA1 | 1,186 | 
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Kyocera AVX Components CK06BX564KMultilayer Ceramic Capacitors MLCC - Leaded .56UF 50V 10% 5.08MM | 
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CK06BX564K | 759 | 
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64K X 1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
IDT7M812Contextual Info: IN T E G R A T E D DEVI CE 3ÛE D • 4ÔES771 Q0G7G1M fl ■ ID T 23-14 IDT7M812 IDT7M912 64K x 8 64K x 9 CMOS STATIC RAM MODULE FEATURES: DESCRIPTION: • High-density 512K CMOS static RAM module • 64K x 8 IDT7M812 or 64K x 9 (IDT7M912) configuration  | 
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ES771 IDT7M812) IDT7M912) 40-pin, IDT7M812 IDT7M912 IDT7M812/IDT7M912 T-46-23-14 MIL-STD-883, 7M812 | |
CY14B101LA-SZ45XI
Abstract: CY14B101LA-SZ25XI 
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CY14B101LA CY14B101NA 8/64K CY14B101LA/CY14B101NA CY14B101LA-SZ45XI CY14B101LA-SZ25XI | |
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 Contextual Info: DPS1037 Dense-Pac Microsystems, Inc. 64K X 16 CMOS SRAM MODULE O DESCRIPTION: The DPS1037 is a 64K X 16 high-speed, low-power static RAM module comprised of sixteen 64K X 1 monolithic SRAM's, and decoupling capacitors surface mounted on a co-fired ceramic substrate having  | 
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DPS1037 DPS1037 64Kx1 30A04M | |
MX27C1100Contextual Info: Introduction Selection Guide MX27C1100/27C1024 1M-BIT 128K x 8/64K x 16 CMOS EPROM FEATURES • 64K x 16 organization(MX27C1024, JEDEC pin out) • 128K x 8 or 64K x 16 organization(MX27C1100, ROM pin out compatible) • +12.5V programming voltage • Fast access time: 55/70/85/100/120/150 ns  | 
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MX27C1100/27C1024 8/64K MX27C1024, MX27C1100, 40pin MX27C1100/1024 MX27C1100 | |
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 Contextual Info: Í D P M 7Dense-Pac Microsystems. Inc. 0 DPS1025 64K X 16 CMOS SRAM MODULE NOT RECOMMENDED FOR NEW DESIGNS D ESCRIPTIO N : The DPS1025 is a 64K X 8 high-speed, low-power static RAM module comprised of sixteen 64K X 1 monolithic SRAM 's, and decoupling capacitors  | 
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DPS1025 DPS1025 Complete601 S1025 125-C | |
IBM043611ULAB4MContextual Info: IBM043611ULAB4M x 1612/10, 3.3VMMDM15DSU-021045023. Preliminary IBM043611ULAB IBM041811ULAB 32K x 36 & 64K x 18 SRAM Features • 32K x 36 or 64K x 18 organizations • Registered outputs • 0.45 Micron CMOS technology • Asynchronous Output Enable and Power Down  | 
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IBM043611ULAB4M 3VMMDM15DSU-021045023. IBM043611ULAB IBM041811ULAB GA14-4669-02 | |
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 Contextual Info: ► DPS1026 64K X 16 CMOS SRAM MODULE Dense-Pac Microsystems, Inc. 0 NOT RECOMMENDED FOR NEW DESIGNS DESCRIPTION: The DPS1026 is a 64K X 16 high-speed, low-power static RAM module comprised of sixteen 64K X 1 monolithic SRAM 's, and decoupling capacitors surface mounted on a thick film ceramic substrate.  | 
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DPS1026 DPS1026 30A00602 S1026 | |
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 Contextual Info: DPS384 □PM Dense-Pac Microsystems, Inc. 64K X 6 CMOS SRAM MODULE NOT RECOMMENDED FOR NEW DESIGNS D ESC R IPT IO N : The DPS384 is a 64K X 6 high-speed, low-power static RA M module comprised of six 64K X 1 m onolithic SR A M 's, and decoupling capacitors  | 
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DPS384 DPS384 500mV | |
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 Contextual Info: □PM DPS8645 Dense-Pac Microsystems, Inc. 64K X 4 CMOS SRAM MODULE O NOT RECOMMENDED FOR NEW DESIGNS DESCRIPTION: The DPS8645 is a 64K X 4 high-speed, low-power static RAM module comprised of four 64K X 1 monolithic SRAM's, and decoupling capacitors surface mounted on a single inline thick film ceramic  | 
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DPS8645 DPS8645 500mV | |
SA82A
Abstract: IBM043610ULAB4M SA73A 
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IBM043610ULAB4M 3VMMDM15DSU-021044922. IBM041810ULAB IBM043610ULAB SA82A SA73A | |
power supply 350WContextual Info: IBM043611TLAB4M x 1612/10, 3.3VMMDM15DSU-021045122. Preliminary IBM041811TLAB IBM043611TLAB 32K x 36 & 64K x 18 SRAM Features • 32K x 36 or 64K x 18 Organizations • Common I/O • 0.45 Micron CMOS Technology • Asynchronous Output Enable and Power Down  | 
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IBM043611TLAB4M 3VMMDM15DSU-021045122. IBM041811TLAB IBM043611TLAB GA14-4670-03X power supply 350W | |
9l reset
Abstract: CY7C0852V-133AC CY7C09289V CY7C09369V CY7C09379V 
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CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3 64K/128K 128K/256K CY7C0851V/CY7C0852V CY7C0831V/CY7C0832V 9l reset CY7C0852V-133AC | |
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 Contextual Info: □PM DPS8644 Dense-Pac Microsystems. Inc. 64K X 4 C M O S SRAM MODULE O NOT RECO M M EN DED FOR NEW DESIGNS DESCRIPTIO N: The D P S8644 is a 64K X 4 high-speed, low-power static R A M module comprised of four 64K X 1 monolithic SR A M 's, and decoupling capacitors  | 
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DPS8644 S8644 30A00W53 | |
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 Contextual Info: EbE D LOGIC DEVICES INC WÈ SSbSTQS O O O I H G LMM624 1 Megabit 64K x 16-bit Static RAM Module DESCRIPTION FEATURES □ IM egabit (64K x 16-bit) Static RAM M odule □ Utilizes 16 L7C187 64K x 1 Static RAMs □ A dvanced CMOS Technology Q H igh Speed, Low Pow er  | 
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LMM624 16-bit) L7C187 IDT7M624S 40-pin LMM624 | |
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 Contextual Info: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM CY7C0837V CY7C0830V/CY7C0831V CY7C0832V/CY7C0833V PRELIMINARY FLEx18TM 3.3V 32K/64K/128K/256K/512K x 18 Synchronous Dual-Port RAM  | 
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CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3 64K/128K 128K/256K CY7C0837V CY7C0830V/CY7C0831V | |
IBM041813PPL64KContextual Info: 64K x 18Burst Pipeline Pentium , PLCC package. IBM041813PPL 64K X 18 BURST PIPELINE SRAM Features • 64K x 18 Organization • 0.5µ CMOS Technology • Registered Addresses, Data Ins, Control signals, and Outputs • Asynchronous Output Enable  | 
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IBM041813PPL64K 18Burst IBM041813PPL i486TM | |
SA73AContextual Info: . Preliminary IBM043611RLAB IBM041811RLAB 32K X 36 & 64K X 18 SRAM Features • 32K x 36 or 64K x 18 Organizations • Registered Outputs • 0.5 Micron CMOS Technology • Asynchronous Output Enable and Power Down Inputs • Synchronous Pipeline Mode Of Operation with  | 
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IBM043611RLAB IBM041811RLAB SA73A | |
A12L
Abstract: A13L IDT707288 707288 
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IDT707288S/L 16-bit 100-pin PN100-1) A12L A13L IDT707288 707288 | |
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 Contextual Info: Integrated Device Technology, Inc. HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks  | 
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IDT707288S/L 16-bit 32-bit IDT707288 100-pin PN100-1) | |
ci 4077
Abstract: A12L A13L IDT70V7288 
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IDT70V7288S/L 16-bit 100-pin PN100-1) 70V7288 ci 4077 A12L A13L IDT70V7288 | |
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 Contextual Info: I * / Integrated Device Technology, Inc. HIGH-SPEED 64K X 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks  | 
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IDT707288S/L 16-bit IDT707288 IDT707288S/L 100-pin PN100-1) | |
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 Contextual Info: IBM041811TLAB IBM043611TLAB Preliminary 32K x 36 & 64K x 18 SRAM Features • 32K x 36 or 64K x 18 Organizations • Common I/O • 0.45 Micron CMOS Technology • Asynchronous Output Enable and Power Down Inputs • Synchronous Pipeline Mode of Operation with  | 
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IBM041811TLAB IBM043611TLAB | |
IDT8M624
Abstract: 8M624 8M624S 64k dynamic RAM 8M612S100 IDT8M624S 
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IDT8M624S IDT8M612S IDT8M624S) IDT8M612S) 40-pin IDT8M624S/IDT8M612S IDT8M624S, IDT8M612S 64K/32K MtL-STD-883 IDT8M624 8M624 8M624S 64k dynamic RAM 8M612S100 | |
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 Contextual Info: IBM043611 ULAB IBM041811 ULAB Prelim inary 32K x 36 & 64K x 18 SRAM Features • 32K x 36 or 64K x 18 organizations • Registered outputs • 0.45 Micron CMOS technology • Asynchronous Output Enable and Power Down Inputs • Synchronous pipeline mode of operation with  | 
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IBM043611 IBM041811 GA14-4669-02 | |