612 T3 Search Results
612 T3 Price and Stock
Sunny Electronics Corp SYS1546-3612-T3Power supply: switching; 12VDC; 3A; Out: 5,5/2,1; 36W; 90÷264VAC |
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SYS1546-3612-T3 | 56 | 1 |
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Omega Engineering P-L-A-1/4-6-1/2-T-3ULTRA PRECISE RTD SENSORS FOR INDUSTRIAL APPLICATIONS - Bulk (Alt: P-L-A-1/4-6-1/2-T-3) |
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P-L-A-1/4-6-1/2-T-3 | Bulk | 1 |
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onsemi FDT3612MOSFETs 100V NCh PowerTrench |
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FDT3612 | 21,139 |
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TDK Corporation VLCF4028T-330MR61-2Power Inductors - SMD 33uH |
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VLCF4028T-330MR61-2 | 14,144 |
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onsemi NTMFS5C612NLT1GMOSFETs NFET SO8FL 60V 219A 1.8MO |
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NTMFS5C612NLT1G | 5,443 |
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612 T3 Datasheets Context Search
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MACH Technical Briefs Manual
Abstract: amd 44 MACH210
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14051g14051hach220-12achlv210+2 | |
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Contextual Info: Metallized Polypropylene Film Capacitors MKP Coated (Powder Dipped) B 32 612 . B 32 614 Wound MKP capacitors Construction • Dielectric: polypropylene • Wound capacitor technology • Epoxy resin coating (UL 94 V-0) Features • High pulse strength |
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SIM 900 file attachment email AT COMMANDS
Abstract: PROCOMM PLUS ATS10 ATS12 MNP10 GGSN ST Microelectronics date code format
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ch2166ch2166ach2168ch2168a+7 | |
AND190HAPContextual Info: AND190HAP Ultra Bright LED Lamps: Type 3 Weight: 1.0 g Unit: mm AND190HAP 11.0±0.3 InGaAlP High Brightness Amber Light Emission T-3 Package 10 mm 10.0±0.2 • New emission material (InGaAlP) amber LED • Peak wavelength (λp = 612 nm) high bright emission |
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and190hap | |
AND190HAPContextual Info: AND190HAP Ultra Bright LED Lamps: Type 3 Weight: 1.0 g Unit: mm AND190HAP 11.0±0.3 InGaAlP High Brightness Amber Light Emission T-3 Package 10 mm 10.0±0.2 • New emission material (InGaAlP) amber LED • Peak wavelength (λp = 612 nm) high bright emission |
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Contextual Info: 612nm ULTRA BRIGHT ORANGE LEDs DESCRIPTION PART NUMBER L400CW012K T4 ROUND RADIATED COLOR ULTRA ORANGE ELECTRO - OPTICAL SPECIFICATIONS If Iv Vf VIEW lr mcd V ANGLE mA |iA 1.95 4° 20 12000 100 DESCRIPTION PART NUMBER L200CW06K XP nm 612 L200CW06K-NB ULTRA ORANGE |
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612nml400cw012kl200cw06kl200cw06k-nb+5 | |
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Contextual Info: AND190HAP Ultra Bright LED Lamps: Type 3 Weight: 1.0 g Unit: mm AND190HAP 11.0±0.3 InGaAlP High Brightness Amber Light Emission T-3 Package 10 mm 10.0±0.2 • New emission material (InGaAlP) amber LED • Peak wavelength (λp = 612 nm) high bright emission |
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and190hap | |
82C611
Abstract: P82C612 82C612 74s288 ibm t43 82C811 P82C611 74S288 PROGRAMMING mfp4 74S288 prom
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82c61182c612s2c611p82c612+7 | |
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Contextual Info: Ultra Bright LED Lamps: Type 3 Weight: 1.0 g Unit: mm AND190HAP InGaAlP High Brightness Amber Light Emission T-3 Package 10 mm Features • New emission material (InGaAlP) amber LED • Peak wavelength (?ip = 612 nm) high bright emission • All plastic mold type, clear colorless lens |
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and190hapdd053gbg23g7 | |
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Contextual Info: Decision Feedback Equalization in Stratix IV Devices AN-612-1.1 Application Note This application note describes the decision feedback equalization DFE feature found in the Stratix IV device equalizer. Use the DFE feature to improve the high frequency signal-to-noise ratio by compensating for inter-symbol interference (ISI). |
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an-612-1 | |
SKiiP 613 GBContextual Info: s e MIKRDN SKiiP 612 GB 120-203 WT Absolute Maximum Ratings Symbol |Conditions 1 V a lu e s Units 1200 900 600 1200 - 5 5 . . . + 150 3000 5) 490 1200 4300 93 V Operating DC link voltage Theatsink = 25 °C Theatsink = 25 °C; tp < 1 mS IGBT & Diode AC, 1 min. |
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613bb71qq05q01ai3bb710gq50g3+2 | |
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Contextual Info: ORANGE 10 m m In G a A lP U ltr a B rig h t LED TLOH190P Product Features • InGaAlP Technology • T-3 10 mm Package • High Intensity Orange Light (>.p = 612 nm) Emission • Water Clear Lens • Narrow Radiation Pattern M AXIM UM RATINGS (Ta = 25 C) |
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tloh190p00006ch | |
P517c
Abstract: AN207 DG611 DG611DJ DG611DY DG612 DG612DJ DG612DY DG613 "N-Channel JFET", 350 v
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dg611/612/613dg613p-387126ssm735+9 | |
Horizontal Transistor TT 2246
Abstract: Transistor TT 2246 CRT Monitor repair schematic circuit diagram of crt monitor yoke coil hv flyback transformer In400I Diode IN5398 3PDT switch 9 pin true bypass TT 2246 transistor J103 scr
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55164-telephoneim1017tv-154-h-75+10 | |
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Contextual Info: MUBW 75-17 T8 Advanced Technical Information Converter - Brake - Inverter Module CBI3 21 D11 D13 22 D7 D15 7 1 2 3 D12 D14 D16 T1 D1 16 15 6 T7 14 23 T2 11 10 T3 18 17 5 T4 D2 T5 D3 20 19 4 T6 D4 12 D5 D6 13 24 8 NTC 9 Three Phase Rectifier Brake Chopper |
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b25/50 | |
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Contextual Info: 71E 53oneo üoocnsB T3T B au fo rm /S tyle G Polzahl/Number of contacts max. 6 4 Federleisten / R eceptacle 40 Fett gedruckte Bestell-Nummern = Vorzugstypen. Preferred items in bold print. D 71E • 5 3 0 1 1 2 0 0 0 0 0 1 2 4 17b ■ Bauform / Style G Federleisten / Receptacle |
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53oneo | |
T3D+53
Abstract: t3d 05 T3D 53
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psd51psd54psh81psl51+4 | |
612P10
Abstract: Hitachi DSA00279
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h8s/2668h8s/2667hd64f2667ade-602-257a+2 | |
HD64F2266TF13
Abstract: HD64F2266 pk2dr pop reduction circuit TMR 9102 h8s 2110 PK018 HD64F2268TF20
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h8s/2268grouph8s/2264group16-bitfamily/h8s/2000+13 | |
107000
Abstract: mitsubishi 04c4 OSP-33 A17E HD64F2667 ADE-702-282 hitachi ast1
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h8s/2668107000mitsubishi 04c4osp-33+4 | |
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Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Optoelectronics - SMD and Leaded LEDs for Lighting Applications LEDs for Lighting Solutions Surface-Mount and Leaded LEDs, Displays, and LED Modules Little Star PLCC-2 TELUX 1.8mm PLCC-2 Plus |
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pb-f9337-2726vmn-sg2132-1311 | |
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Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS LEDs for Lighting Solutions Surface-Mount and Leaded LEDs, Displays, and LED Modules Little Star PLCC-2 TELUX Side View PLCC-2 Plus Reverse Gullwing 5 mm Displays RGB Mini 3 mm Clock Modules |
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vmn-sg2132-1504 | |
HD64F2266TF13
Abstract: ade 3800 capacitive proximity sensor pwm cross reference 2262 TCI 550 antenna FZTAT256V3A ade-702-189 cr 6848 TCI antenna h7 229 to-92 rru 101012
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h8s/2268grouph8s/2264group16-bitfamily/h8s/2000+16 | |
HD64F2667Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. |
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h8s/2668hd64f2667 | |