60V TRANSISTOR NPN 2A Search Results
60V TRANSISTOR NPN 2A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| RX1214B130YI |
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NPN microwave power transistor |
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| MX0912B251Y |
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NPN microwave power transistor |
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| RZ1214B35YI |
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NPN microwave power transistor |
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| 2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet |
60V TRANSISTOR NPN 2A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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ZXTN2010GTA
Abstract: ZXTN2010G ZXTN2010GTC Bv 42 transistor
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ZXTN2010G OT223 OT223 ZXTN2010GTA ZXTN2010G ZXTN2010GTC Bv 42 transistor | |
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Contextual Info: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits |
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ZXTN2010G OT223 OT223 | |
ZXTN
Abstract: ZXTN2010GTA ZXTN2010G ZXTN2010GTC
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ZXTN2010G OT223 OT223 INFORMAT26100 ZXTN ZXTN2010GTA ZXTN2010G ZXTN2010GTC | |
ZX5T851G
Abstract: ZX5T851GTA ZX5T851GTC Bv 42 transistor
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ZX5T851G OT223 OT223 ZX5T851G ZX5T851GTA ZX5T851GTC Bv 42 transistor | |
X5T851
Abstract: bv 42 TRANSISTOR equivalent
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ZX5T851G OT223 OT223 522-ZX5T851GTA ZX5T851GTA X5T851 bv 42 TRANSISTOR equivalent | |
transistor marking 6A
Abstract: ZXTN2010Z ZXTN2010ZTA
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ZXTN2010Z transistor marking 6A ZXTN2010Z ZXTN2010ZTA | |
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Contextual Info: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various |
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ZXTN2010Z | |
ZXTN2010A
Abstract: ZXTN2010ASTOA ZXTN2010ASTZ
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ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ | |
IC2A
Abstract: marking N20 ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ
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ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ IC2A marking N20 ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ | |
npn 120v 10a transistor
Abstract: ZX5T851Z ZX5T851ZTA
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ZX5T851Z npn 120v 10a transistor ZX5T851Z ZX5T851ZTA | |
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Contextual Info: ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits |
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ZXTN2010A ZXTN2010ASTOA ZXTN2010AST) | |
ZXTN2010ZTA
Abstract: ZXTN2010Z 0019E
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ZXTN2010Z ZXTN2010ZTA ZXTN2010Z 0019E | |
X5T851
Abstract: ZX5T851A ZX5T851ASTOA ZX5T851ASTZ
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ZX5T851A ZX5T851ASTOA ZX5T851ASTZ X5T851 ZX5T851A ZX5T851ASTOA ZX5T851ASTZ | |
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Contextual Info: ZX5T851G 60V NPN M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extrem ely low on state losses m aking it ideal for use in |
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ZX5T851G OT223 OT223 | |
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Contextual Info: ZX5T851A 60V NPN LOW SATURATION M EDIUM POWER TRANSISTOR IN E-LINE SUM M ARY BV CEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new 5th generation low saturation 60V NPN transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC |
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ZX5T851A | |
ZXTP19060CFF
Abstract: ZXTN19060CFF ZXTN19060CFFTA
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ZXTN19060CFF OT23F, ZXTP19060CFF OT23F ZXTP19060CFF ZXTN19060CFF ZXTN19060CFFTA | |
ZXTN19060CFF
Abstract: ZXTN19060CFFTA ZXTP19060CFF marking 1E4
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ZXTN19060CFF OT23F, ZXTP19060CFF OT23F ZXTN19060CFF ZXTN19060CFFTA ZXTP19060CFF marking 1E4 | |
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Contextual Info: ZXTN19060CFF 60V, SOT23F, NPN high gain power transistor Summary BVCEX > 160V BVCEO > 60V BVECO > 6V IC cont = 5.5A VCE(sat) < 45mV @ 1A RCE(sat) = 26m⍀ PD = 1.5W Complementary part number ZXTP19060CFF Description C This mid voltage NPN transistor has been designed for applications |
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ZXTN19060CFF OT23F, ZXTP19060CFF OT23F | |
TS16949
Abstract: ZXTN19060CG ZXTN19060CGTA ZXTP19060CG
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ZXTN19060CG OT223 ZXTP19060CG OT223 D-81541 TS16949 ZXTN19060CG ZXTN19060CGTA ZXTP19060CG | |
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Contextual Info: ZXTN19060CG 60V NPN low sat medium power transistor in SOT223 Summary BVCEO > 60V BVCEX > 160V BVECO > 6V IC cont = 7A VCE(sat) < 50mV @ 1A RCE(sat) = 30mΩ PD = 3.0W Complementary part number ZXTP19060CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor |
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ZXTN19060CG OT223 ZXTP19060CG OT223 D-81541 | |
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Contextual Info: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A) |
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2SA2094 2SC5866 SC-96) R1102A | |
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Contextual Info: 2SC5866 Datasheet NPN 2A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60V 2A TSMT3 Collector Base Emitter 2SC5866 SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2094 3) Low VCE(sat) VCE(sat)=0.50V(Max.) |
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2SC5866 SC-96) 2SA2094 R1102A | |
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Contextual Info: DSS4160DS 60V DUAL NPN LOW SATURATION TRANSISTOR IN SOT26 Features Mechanical Data • BVCEO > 60V IC = 1A high Continuous Collector Current Case Material: Molded Plastic, “Green” Molding Compound ICM = 2A Peak Pulse Current UL Flammability Classification Rating 94V-0 |
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DSS4160DS J-STD-020 250mV MIL-STD-202, DS36556 | |
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Contextual Info: A Product Line of Diodes Incorporated FMMT491 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data • BVCEO > 60V • • IC = 1A Continuous Collector Current • • ICM = 2A Peak Pulse Current Case: SOT23 Case Material: molded plastic, “Green” molding compound |
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FMMT491 500mW FMMT591 AEC-Q101 DS33091 | |