60V SINGLE N-CHANNEL HEXFET POWER MOSFET Search Results

Contextual Info: International Rectifier Product Detail Page Page 1 of 2 Part Se Part: AUIRFB3806 Description: Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package Support Docs: N/A Commercial Datasheet Automotive Market IR serves the automotive market with a dedicated product portfolio, with high quality and automotive

Contextual Info: International Rectifier Product Detail Page Page 1 of 2 Part Se Part: AUIRF1018E Description: Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package Support Docs: N/A Commercial Datasheet Reliability Report Automotive Market IR serves the automotive market with a dedicated product portfolio, with high quality and automotive

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

Contextual Info: INTE RNATIONAL RECTIFIER 2bE D • HflSSMSS OülOlfi? Q ■ Government/ Space Products T-39-ôl International ^¡Rectifier Radiation Hard HEXFETs N-Channel V d s Drain Part Number Source Voltage Volts On-sitata Resistance (Ohms) IRHN7150 IRHN8150 IRHN7250

IRFP60A

Abstract: 40A 45V to-220 Schottky IRF7210 ir*c30ud IRFB9N65 2CWQ03FN IR 200V P-Channel fets IRFIB7N50A CONVERTER IRG4IBC10UD 876-1413
Contextual Info: powireview The Technology Update for People in Power New HEXFET MOSFETs for Every Power Supply Application IR Chip Set First to Meet Newest Notebook PC Power Standard New P-Channel HEXFET® Power MOSFETs Offer Best Performance for Low Voltage Circuits New Schottky Diodes

F53 DIODE

Abstract: IRF9Z24L IRF9Z24S
Contextual Info: PD - 9.912A IRF9Z24S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z24S l Low-profile through-hole (IRF9Z24L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.28Ω

IRF9Z14L

Abstract: IRF9Z14S
Contextual Info: PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z14S l Low-profile through-hole (IRF9Z14L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.50Ω

IRF9Z34

Abstract: IRF9Z34L IRF9Z34S
Contextual Info: PD - 9.913A IRF9Z34S/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRF9Z34S l Low-profile through-hole (IRF9Z34L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D VDSS = -60V RDS(on) = 0.14Ω

IRF9Z34L

Abstract: IRF9Z34S
Contextual Info: PD - 9.913A IRF9Z34S/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRF9Z34S l Low-profile through-hole (IRF9Z34L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D VDSS = -60V RDS(on) = 0.14Ω

"thermal via" PCB D2PAK

Abstract: 9912A thermal IRF9Z24L IRF9Z24S 9912A
Contextual Info: PD - 9.912A IRF9Z24S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z24S l Low-profile through-hole (IRF9Z24L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.28Ω

IRF9Z34S

Abstract: IRF9Z34L "thermal via" PCB D2PAK
Contextual Info: PD - 9.913A IRF9Z34S/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRF9Z34S l Low-profile through-hole (IRF9Z34L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D VDSS = -60V RDS(on) = 0.14Ω

IRF9Z14L

Abstract: IRF9Z14S marking 67A
Contextual Info: PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z14S l Low-profile through-hole (IRF9Z14L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.50Ω

IRF9Z14L

Abstract: IRF9Z14S
Contextual Info: PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z14S l Low-profile through-hole (IRF9Z14L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.50Ω

Contextual Info: PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z14S l Low-profile through-hole (IRF9Z14L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.50Ω

IRF9Z24S/L

Contextual Info: PD - 9.912A IRF9Z24S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z24S l Low-profile through-hole (IRF9Z24L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.28Ω

Contextual Info: P D -9.911 A International IRF9Z14S/L 3BR Rectifier HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF9Z14S • Low-profile through-hole (IRF9Z14L) • 175°C Operating Temperature • Fast Switching • P- Channel • Fully Avalanche Rated

9437B

Contextual Info: Data Sheet No. PD-9.437B I«R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG5110 COMBINATION N AND P CHANNEL IS EACH POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE) Product Summary 100 Volt, 0.70 Ohm (N-Channel and P-Channel) HEXFETs

Contextual Info: PD -97551 AUTOMOTIVE GRADE • Advanced Process Technology • Optimized for Class D Audio Amplifier and High Speed • • • • • • • • • DirectFET™ Power MOSFET ‚ V BR DSS 60V Switching Applications Low Rds(on) for Improved Efficiency Low Qg for Better THD and Improved Efficiency

IRF5905

Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
Contextual Info: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES

IRFT003

Abstract: automatic volume control using lm358 IRFT003http://datasheet.datasheetarchive.com/originals/scans/Scans-021/ScansEX27879.pdf disadvantages of automatic room power control CPY203E lm358 current sense 10a disadvantages of automatic room control IRCC034 LM324 pin configuration of TLC271
Contextual Info: INTERNATIONAL RECTIFIER bSE D • 4ÛS5MS5 QQlbSOB 3SÔ ■ INR Data Sheet No. PD-5.014D International [^Rectifier HEXFET Power Module CPY203E & IRFT003 Power H-Brldges Description/Featu res Product Summary The CPY203E and the IRFT003 are intended for use

AN-944A

Abstract: AN944A AN934B IRF130 IRF430 IRF440 what is THERMAL RUNAWAY IN RECTIFIER MOSFET i-pak Package zener diode MOSFET reliability report format AN949A High frequency switching
Contextual Info: EXECUTIVE SUMMARY FIFTY FIFTH QUARTERLY REPORT This Quarterly Reliability Report is a summary of test data covering the previous twenty four months of component testing at International Rectifier's HEXFET America facility in Temecula, California. The products tested include HEXFETs packaged in TO-220,

IRF520 application note

Abstract: IRF52Q Irf520 spice irf522 AN975 A44B irf521
Contextual Info: HE D I Data Sheet No. PD-9.313J 40 55 4 5 5 □□00 44 2 2 | T-39-11 INTERNATIONAL RE CT IFIER INTERNATIONAL RECTIFIER I I O R I REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRF52Q IRFS21

irf 1740

Abstract: 48V SMPS smps 48v 12v
Contextual Info: PD- 96128 IRF7478QPbF SMPS MOSFET HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free Description

Contextual Info: PD- 96128B END OF LIFE IRF7478QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free VDSS RDS on max (mW) ID 26@VGS = 10V