60V 3A DIODE Search Results

XBS306S17

Abstract: 306S17 XBS30
Contextual Info: XBS306S17R-G ETR1616-002a Schottky Barrier Diode, 3A, 60V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.59V TYP. ●Rectification Forward Current : IF(AVE)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=60V

SD833-06

Abstract: SD833 60V 3A diode mark BC TL121
Contextual Info: SD833-06 3A (60V / 3A ) Schottky barrier diode 0.8 Outline drawings, mm Characteristics SD833-06 Units Condition 3 A 4.0 BC Tj=125°C, typ 0.8 V V 0.2 1.2 IO 60 0.5 max. VRRM VF 5.0 Major characteristics 1.5 2.5 Features Low VF High voltage 60V Low height : 1.2mm max.

mosfet pch 3a 60v

Abstract: JESD97 STS4C3F60L
Contextual Info: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly

FZT651

Abstract: transistor fzt651 FZT marking code FZT651QTC fzt651tc FZT651TA
Contextual Info: A Product Line of Diodes Incorporated Green FZT651 60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • BVCEO > 60V Maximum continuous current IC cont = 3A Low Saturation Voltage

LT3992FE

Abstract: Monolithic Dual Tracking 3A Step-Down Switching Regulator
Contextual Info: LT3992 Monolithic Dual Tracking 3A Step-Down Switching Regulator Description Features Wide Input Range: – Operation from 3V to 60V n Independent Supply, Shutdown, Soft-Start, UVLO, Programmable Current Limit and Programmable Power Good for Each 3A Regulator

c81 006

Abstract: erc81 ERC81-006
Contextual Info: ERC81-006 3A (60V / 3A ) Outline drawings, mm SCHOTTKY BARRIER DIODE ø 6.4 ø 1.2 7.5 30 MIN. 30 MIN. Marking Features Color code : Silver Low VF Abridged type name High reliability by planer design Voltage class Lot No. Applications C81 -006 02 •··

c81 006

Contextual Info: ERC81-006 3A (60V / 3A ) Outline drawings, mm SCHOTTKY BARRIER DIODE ø 6.4 ø 1.2 7.5 30 MIN. 30 MIN. Marking Features Color code : Silver Low VF Abridged type name High reliability by planer design Voltage class Lot No. Applications C81 -006 02 •··

SD833-09

Abstract: SD833
Contextual Info: SD833-09 3A (90V / 3A ) Schottky barrier diode 0.8 Outline drawings, mm Characteristics SD833-09 Units Condition 3 4.0 BD 0.8 Tj=125°C, typ A 0.2 1.2 IO V V max. 90 0.66 VRRM VF 5.0 Major characteristics 1.5 2.5 Features Low VF High voltage 60V Low height : 1.2mm max.

C3995

Abstract: LT3995I LT3995IMSE 155FB lt3995
Contextual Info: LT3995 60V, 3A, 2MHz Step-Down Switching Regulator with 2.7µA Quiescent Current FEATURES DESCRIPTION Ultralow Quiescent Current: 2.7µA IQ at 12VIN to 3.3VOUT n Low Ripple Burst Mode Operation Output Ripple < 15mVP-P n Wide Input Range: Operation from 4.3V to 60V

MMSD914TI

Abstract: LTC3430 simple cheap source 5A 12V switiching diode 30BQ060 LT3430 LT3430EFE LT3430IFE 3430IFE-1 ltc3430-1
Contextual Info: LT3430/LT3430-1 High Voltage, 3A, 200kHz/100kHz Step-Down Switching Regulators DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Wide Input Range: 5.5V to 60V 3A Peak Switch Current over All Duty Cycles Constant Switching Frequency: 200kHz LT3430

STN3PF06

Contextual Info: STN3PF06 P-CHANNEL 60V - 0.18Ω - 3A SOT-223 STripFET II POWER MOSFET PRELIMINARY DATA TYPE STN3PF06 • ■ ■ ■ ■ VDSS RDS on ID 60V <0.20Ω 2.5A 2 TYPICAL RDS(on) = 0.18Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

P008B DIODE

Abstract: STN3PF06
Contextual Info: STN3PF06 P-CHANNEL 60V - 0.18Ω - 3A SOT-223 STripFET II POWER MOSFET PRELIMINARY DATA TYPE STN3PF06 • ■ ■ ■ ■ VDSS RDS on ID 60V <0.20Ω 2.5A 2 TYPICAL RDS(on) = 0.18Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STS3DPF60L

Abstract: S3DPF
Contextual Info: STS3DPF60L DUAL P-CHANNEL 60V - 0.10 Ω - 3A SO-8 STripFET MOSFET Table 1: General Features TYPE VDSS RDS on ID 60 V < 0.12 Ω 3A STS3DPF60L • ■ ■ Figure 1: Package TYPICAL RDS(on) = 0.10 Ω @ 10V STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT

STN3NE06

Contextual Info: STN3NE06 N - CHANNEL 60V - 0.08Ω - 3A - SOT-223 STripFET POWER MOSFET TYPE V DSS R DS on ID STN3NE06 60 V < 0.100 Ω 3A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.08 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED

STN3NF06L

Contextual Info: STN3NF06L N-CHANNEL 60V - 0.07Ω - 3A SOT-223 STripFET II POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STN3NF06L 60 V < 0.1 Ω 3A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE

STN3NE06L

Contextual Info: STN3NE06L N - CHANNEL 60V - 0.10 Ω - 3A - SOT-223 STripFET POWER MOSFET PRELIMINARY DATA TYPE STN3NE06L • ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.120 Ω 3A TYPICAL RDS(on) = 0.10 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED

STS3DNE60L

Contextual Info: STS3DNE60L N - CHANNEL 60V - 0.065Ω - 3A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS3DNE60L • ■ ■ V DSS R DS on ID 60 V < 0.08 Ω 3A TYPICAL RDS(on) = 0.065 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

STN3NF06

Contextual Info: STN3NF06 N-CHANNEL 60V - 0.07Ω - 3A SOT-223 STripFET II POWER MOSFET TYPE STN3NF06 • ■ ■ VDSS RDS on ID 60 V < 0.1 Ω 3A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED DESCRIPTION This Power MOSFET is the latest development of

Contextual Info: T N 01A Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVDSS/ R d S ON ' d (ON) ^ G S (th ) b v dgs (max) (min) (max) 60V 3a 2A 100V 3a 2A Order Number / Package TO-39 TO-92 DICEt

STS3DNE60L

Contextual Info: STS3DNE60L N - CHANNEL 60V - 0.065Ω - 3A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS3DNE60L • ■ ■ V DSS R DS on ID 60 V < 0.08 Ω 3A TYPICAL RDS(on) = 0.065 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

Contextual Info: STN3NF06 N-CHANNEL 60V - 0.07Ω - 3A SOT-223 STripFET II POWER MOSFET TYPE STN3NF06 • ■ ■ VDSS RDS on ID 60 V < 0.1 Ω 3A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED DESCRIPTION This Power MOSFET is the latest development of

STS3DNE60L

Contextual Info: STS3DNE60L N - CHANNEL 60V - 0.065Ω - 3A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS3DNE60L • ■ ■ V DSS R DS on ID 60 V < 0.08 Ω 3A TYPICAL RDS(on) = 0.065 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

Contextual Info: TPS54362-Q1, TPS54362A-Q1 SLVS845D – MARCH 2009 – REVISED OCTOBER 2011 www.ti.com 3A, 60V STEP DOWN DC/DC CONVERTER WITH LOW Iq Check for Samples: TPS54362-Q1, TPS54362A-Q1 • FEATURES 1 • 2 • • • • • • • • • • • Withstands Transients up to 60V With an

Contextual Info: TPS54362-Q1, TPS54362A-Q1 SLVS845D – MARCH 2009 – REVISED OCTOBER 2011 www.ti.com 3A, 60V STEP DOWN DC/DC CONVERTER WITH LOW Iq Check for Samples: TPS54362-Q1, TPS54362A-Q1 FEATURES • 1 • 2 • • • • • • • • • • • Withstands Transients up to 60V With an