60V 39A TO220 Search Results

Contextual Info: Ordering number : ENA1907B BMS3003 P-Channel Power MOSFET –60V, –78A, 6.5mΩ, TO-220F-3SG http://onsemi.com Features • • • ON-resistance RDS on 1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) -4V drive Specifications Absolute Maximum Ratings at Ta=25°C

A1907

Abstract: TF-680
Contextual Info: BMS3003 Ordering number : ENA1907 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET BMS3003 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) 4V drive Specifications

Contextual Info: BMS3003 Ordering number : ENA1907A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET BMS3003 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) 4V drive Specifications

ICE3B0365J

Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)

A1907

Abstract: TO-220F-3SG
Contextual Info: BMS3003 Ordering number : ENA1907A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET BMS3003 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) 4V drive Specifications

Contextual Info: PD-95935A IRFB3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G S VDSS RDS on typ. max. ID

Contextual Info: PD - 96903 IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt

AN-994

Abstract: IRFB3507 IRFS3507 IRFSL3507
Contextual Info: PD - 96903B IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.

Contextual Info: PD - 96903B IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.

Contextual Info: PD - 96903A IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G

Contextual Info: PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G

19-AF

Abstract: AN-994
Contextual Info: PD - 95935A IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G

AN-994

Abstract: IRFB3507 IRFS3507 IRFSL3507
Contextual Info: PD - 96903B IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.

Chengdu

Contextual Info: CPEC RX80N75 RX80N75 Silicon N Channel Power MOSFET Description ²Trench power MOSFET technology ²Fast switching speed ²Low on-resistance ²100% avalanche tested Features ²VDSS =75V ²ID =80A ²RDS on ＜8mΩ (VGS=10V) Application ²Switching application

RX80N08

Contextual Info: CPEC RX80N08 RX80N08 Silicon N Channel Power MOSFET Description ²Trench power MOSFET technology ²Fast switching speed ²Low on-resistance ²100% avalanche tested Features ²VDSS =80V ²ID =80A ²RDS on ＜8mΩ (VGS=10V) Application ²Switching application

76432S

Abstract: ON 4673 AN9321 AN9322 HUF76432P3 HUF76432S3S HUF76432S3ST TB334
Contextual Info: HUF76432P3, HUF76432S3S Data Sheet December 1999 File Number 4673.3 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF76432P3 HUF76432S3S

Contextual Info: HUFA76432P3, HUFA76432S3S TM Data Sheet November 2000 File Number 4994 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76432P3 HUFA76432S3S

76432S

Abstract: 76432P HUF76432S3ST HUF76432P3 HUF76432S3S TB334
Contextual Info: HUF76432P3, HUF76432S3S Data Sheet December 1999 File Number 4673.3 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 32P Packaging JEDEC TO-220AB DRAIN FLANGE SOURCE DRAIN GATE UF76 2S3 bjec 0V, 19 m, A, JEDEC TO-263AB GATE SOURCE

76432S

Abstract: AN9321 HUF76432P3 HUF76432S3S HUF76432S3ST TB334
Contextual Info: HUF76432P3, HUF76432S3S Data Sheet December 2001 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF76432P3 HUF76432S3S Features • Ultra Low On-Resistance

76432S

Abstract: 850E3 HUFA76432P3 HUFA76432S3S HUFA76432S3ST TB334 eds 4994
Contextual Info: HUFA76432P3, HUFA76432S3S Data Sheet November 2000 File Number 4994 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76432P3 HUFA76432S3S

76432S

Abstract: HUFA76432P3 HUFA76432S3S HUFA76432S3ST TB334
Contextual Info: HUFA76432P3, HUFA76432S3S Data Sheet December 2001 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUFA76432P3 HUFA76432S3S Features • Ultra Low On-Resistance

IRFZ48V

Contextual Info: PD-94834 IRFIZ48VPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS ˆ Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET Power MOSFET D VDSS = 60V

IRFZ48V

Contextual Info: PD-94834 IRFIZ48VPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS ˆ Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET Power MOSFET D VDSS = 60V