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Catalog Datasheet	Type	Document Tags	PDF
60R250P Abstract: IPB60R250CP Contextual Info: IPB60R250CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max • Ultra low gate charge V Q g,typ 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	IPB60R250CP P-TO263-3 P-TO263 60R250P 60R250P IPB60R250CP	PDF
IPB60R250CP Abstract: JESD22 PG-TO263-3-2 Contextual Info: IPB60R250CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max • Ultra low gate charge V Q g,typ 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	IPB60R250CP P-TO263-3 P-TO263 60R250P IPB60R250CP JESD22 PG-TO263-3-2	PDF
IPW60R250CP Abstract: JESD22 Contextual Info: IPW60R250CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	IPW60R250CP PG-TO247 60R250P IPW60R250CP JESD22	PDF
Contextual Info: IPW60R250CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max • Ultra low gate charge V Q g,typ 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	IPW60R250CP PG-TO247 60R250P	PDF
Contextual Info: IPI60R250CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max • Ultra low gate charge V Q g,typ 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	IPI60R250CP PG-TO262-3-1 PG-TO262 60R250P	PDF
IPI60R250CP Abstract: 60R250P JESD22 Contextual Info: IPI60R250CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	IPI60R250CP PG-TO262 60R250P IPI60R250CP 60R250P JESD22	PDF