608BIT Search Results

Contextual Info: TMS28F008Axy,TMS28F800Axy 1Ă048Ă576 BY 8ĆBIT/524Ă288 BY 16ĆBIT AUTOĆSELECT BOOTĆBLOCK FLASH MEMORIES SMJS851A − NOVEMBER 1997 − REVISED MARCH 1998 D Organization . . . 1 048 576 By 8 Bits D D D D D D D D D 524 288 By 16 Bits Array-Blocking Architecture

Contextual Info: bM27S25 004203b ^70 A T A SHEET EC MOS INTEGRATED CIRCUIT /¿PD42S4190, 424190 4 M-BIT DYNAMIC RAM 256K-WORD BY 18-BIT, FAST PAGE MODE, BYTE WRITE MODE DESCRIPTION The //PD42S4190, 424190 are 262 144 w ords by 18 bits dynamic CMOS RAMs. The fast page m ode and byte

Contextual Info: TMS28F008Axy,TMS28F800Axy 1 048 576 BY 8-BIT/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SMJS851A – NOVEMBER 1997 – REVISED MARCH 1998 D D D D D D D D D D Organization . . . 1 048 576 By 8 Bits 524 288 By 16 Bits Array-Blocking Architecture

te28f320b3bd70

Abstract: TE28F320B3TD flash device MARKing intel 28f016 28F008B3 28F016B3 28F160B3 28F320B3 28F640B3 28F800B3 76000-77FFF
Contextual Info: Intel£ Advanced Boot Block Flash Memory B3 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V – 3.6 V Read/Program/Erase — 12 V VPP Fast Production Programming • 1.65 V – .5 V or 2.7 V – 3.6 V I/O Option

TE28F320B3BD70

Abstract: TE28F320B3BD 28F008B3 28F016B3 28F160B3 28F320B3 28F640B3 28F800B3 TE28F320B3TD
Contextual Info: Intel£ Advanced Boot Block Flash Memory B3 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V–3.6 V Read/Program/Erase — 12 V VPP Fast Production Programming • 1.65 V–2.5 V or 2.7 V–3.6 V I/O Option

VA36

Contextual Info: Intel£ Advanced Boot Block Flash Memory B3 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V–3.6 V Read/Program/Erase — 12 V VPP Fast Production Programming • 1.65 V–2.5 V or 2.7 V–3.6 V I/O Option

29f8008

Abstract: 29F800 29F800 code TMS29F800T 44-PIN TMS29F800B
Contextual Info: TMS29F800T, TMS29F800B 1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES SMJS835B – MAY 1997 – REVISED OCTOBER 1997 D D D D D D D D D D " Single Power Supply Supports 5 V 10% Read/Write Operation Organization . . . 1 048576 By 8 Bits 524 288 By 16 Bits

JS28F160B3BD70

Abstract: flash device MARKing intel 28f016 te28F320B3BD70 BGA PACKAGE TOP MARK intel uBGA device MARKing intel GE28F160B3BC70 JS28F320B3BD70 intel BGA PACKAGE TOP MARK 28F016B3 28F160B3
Contextual Info: Intel Advanced Boot Block Flash Memory B3 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V V PP fast production programming • 1.65 V – .5 V or 2.7 V – 3.6 V I/O option

azy 25

Abstract: 44-PIN ALY a8
Contextual Info: TMS28F008Axy,TMS28F800Axy 1Ă048Ă576 BY 8ĆBIT/524Ă288 BY 16ĆBIT AUTOĆSELECT BOOTĆBLOCK FLASH MEMORIES SMJS851A − NOVEMBER 1997 − REVISED MARCH 1998 D Organization . . . 1 048 576 By 8 Bits D D D D D D D D D 524 288 By 16 Bits Array-Blocking Architecture

TE28F320B3TD

Abstract: TE28F320B3BD70 GE28F160B3BC70 TE28F160B3BC70 TE28F320B3TD70 PH28F320 TE28F320B3BC70 TE28F320B3BD GE28F160B3BD70 te28f160b3ta90
Contextual Info: Intel Advanced Boot Block Flash Memory B3 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V VPP fast production programming • 1.65 V – .5 V or 2.7 V – 3.6 V I/O option

28F008B3

Abstract: 28F016B3 28F160B3 28F320B3 28F640B3 28F800B3 TE28F320 8891h TE28F016B3TA110 TE28F800B3TA110
Contextual Info: 3-Volt Advanced Boot Block Flash Memory 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V–3.6 V Read/Program/Erase — 12 V VPP Fast Production Programming • 1.65 V–2.5 V or 2.7 V–3.6 V I/O Option

Contextual Info: TMS29LF800T, TMS29LF800B 1048576 BY 8-BIT/524288 BY 16-BIT FLASH MEMORIES SMJS828B – SEPTEMBER 1996 – REVISED OCTOBER 1997 D D D D D D D D D D Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation Organization 1 048 576 By 8 Bits 524 288 By 16 Bits

SA16

Abstract: SA17 SA18 TMS29LF008B TMS29LF008T
Contextual Info: TMS29LF008T, TMS29LF008B 1048576 BY 8-BIT FLASH MEMORIES SMJS846A – MAY 1997 – REVISED NOVEMBER 1997 D D D D D D D D D D Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation Organization . . . 1 048576 By 8 Bits Array Blocking Architecture

28F008SA-L

Abstract: 80L186EB E0000
Contextual Info: 28F008SA-L 8-MBIT 1 MBIT x 8 FLASHFILE TM MEMORY Y High-Density Symmetrically-Blocked Architecture Sixteen 64-Kbyte Blocks Y Low-Voltage Operation b 3 3V g 0 3V or 5 0V g 10% VCC Y Extended Cycling Capability 10 000 Block Erase Cycles 160 000 Block Erase

Contextual Info: I • b 4 2 7 5 5 5 D O M l ^ 5 7 b M N E C E À T A NEC S H E E T MOS INTEGRATED CIRCUIT /¿PD42S4900, 424900 4 M BIT DYNAMIC RAM 512 K-WORD BY 9-BIT, FAST PAGE MODE DESCRIPTION ★ The /iPD42S4900, 424900 are 524 288 w ords by 9 bits dynam ic CMOS RAMs. The fast page m ode cap ab ility

TE28F160B3BC70

Abstract: TE28F320B3BD70 28F008B3 28F016B3 28F320B3 28F400B3 28F640B3 28F400 TE28F640B3BC100 TE28F320B3TD
Contextual Info: 3-Volt Advanced Boot Block Flash Memory 28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Preliminary Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V–3.6 V Read/Program/Erase — 12 V VPP Fast Production Programming • 1.65 V–2.5 V or 2.7 V–3.6 V I/O Option

44-PIN

Abstract: TMS29LF800B TMS29LF800T 29LF800
Contextual Info: TMS29LF800T, TMS29LF800B 1048576 BY 8-BIT/524288 BY 16-BIT FLASH MEMORIES SMJS828B – SEPTEMBER 1996 – REVISED OCTOBER 1997 D D D D D D D D D D Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation Organization 1 048 576 By 8 Bits 524 288 By 16 Bits