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603GD122-3DUL
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Semikron
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SK integrated intelligent Power 6-pack |
Original |
PDF
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114.13KB |
2 |
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603GD122-3DUW
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Semikron
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6-pack-integrated intelligent Power System |
Original |
PDF
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93.27KB |
2 |
SZ603G
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SUNMATE electronic Co., LTD
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Surface mount silicon Zener diode in SMB package with 5.0 W power dissipation, 3.3 to 200 V zener voltage range, and operating junction temperature from -55 to +150 °C. |
Original |
PDF
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VS4603GPHT
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VANGUARD
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40V/100A N-Channel Advanced Power MOSFET with 1.3 mOhm typical RDS(on) at 10V VGS, 160A silicon-limited continuous drain current, PDFN5x6 package, designed for high-efficiency power switching applications. |
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PDF
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NCD0603G2
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Foshan Nationstar Optoelectronics Co Ltd
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Green Chip LED with InGaN chip material, epoxy resin encapsulation, 520–535 nm dominant wavelength, 155–340 mcd luminous intensity, 2.6–3.6 V forward voltage, and Pb-free reflow soldering compatibility. |
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PDF
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VS3603GPMT
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VANGUARD
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30V/200A N-Channel Advanced Power MOSFET with typical RDS(on) of 1.1 mΩ at VGS=10V, available in PDFN5x6 package, designed for high efficiency and fast switching applications. |
Original |
PDF
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VS4603GPMT
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VANGUARD
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40V/100A N-Channel Advanced Power MOSFET with 1.3 mΩ RDS(on) at VGS=10V, available in PDFN5x6 package, featuring high efficiency, fast switching, and low on-resistance for power management applications. |
Original |
PDF
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NCD0603G1
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Foshan Nationstar Optoelectronics Co Ltd
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Green Chip LED with InGaN chip material, epoxy resin encapsulation, 520 nm peak wavelength, viewing angle of 130 degrees, forward voltage of 2.6 to 3.6 V at 10 mA, and luminous intensity ranging from 330 to 900 mcd. |
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PDF
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SZ603G
