600V 5A SCR Search Results

982A

Abstract: IR21364 COMPACT hybrid MODULE ic PWM 2000 IRAM136-0760A marking R1E AN-1044 AN-1049 HIN222
Contextual Info: PD-97333 RevA Integrated Power Hybrid IC for Appliance Motor Drive Applications IRAM136-0760A Series 5A, 600V with Open Emitter Pins Description International Rectifier's IRAM136-0760A is a 5A, 600V Integrated Power Hybrid IC with Open Emitter pins for advanced Appliance Motor Drives applications such as energy efficient Washing Machine and Refrigerator

6MBP15RH060

Abstract: 6MBP30RH060 6MBP20RH060 DC Motor control IGBT FUJI ELECTRIC ipm IGBT THEORY AND APPLICATIONS 1251C 6MBP1 fuji transistor modules fuji transistor catalog 6MBP30RH-060
Contextual Info: FUJI S ' ü J M Ë ï ï ’ü S O E Js&é W SEMICONDUCTOR PRODUCTS 99 No. 4 IGBT-IPM R series Small Capacity, 6 in one-package Device type V ces / Ic 6MBP15RH060 600V /1 5A .page3 6MBP20RH060 600V / 20A. 8

D72SD

Abstract: D96SD BS 89 D48SD DIN43700 DIN48 DIN-96 DIN96 DIN-48 m4 screw
Contextual Info: Types: D48SD, D72SD, D96SD. Accuracy: Class 1.5 Class 2.5 - 60A and above . AC Ratings: 1A to 100A direct connected (D48SD - 40A max) 1A or 5A CT operated 30V to 600V direct connected Burden: 0.7VA typical for 1A or 5A CT operated at 50Hz. 1.2VA max for up to 30A.

LQA05TC600

Abstract: AN-300 RECTIFIER DIODE 1000A schottky C5600
Contextual Info: LQA05TC600 www.Qspeed.com 600V, 5A Q-Series PFC Rectifier General Description Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 5 600 27 1.65 1.4 Utilizing proprietary Qspeed technology this device has the lowest QRR of any 600V Silicon

CR6C60

Contextual Info: CR6C60S Sensitive Gate Silicon Controlled Rectifiers Symbol ○ 2. Anode IT RMS = 5A ▼ ○ 1.Cathode TO-126 BVDRM = 600V ITSM = 36A 3.Gate ○ 1 2 3 Features ◆ ◆ Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 5 A ) Non-isolated TO-126 Package

AN-300

Abstract: C5600 qh05
Contextual Info: QH05TZ600 www.Qspeed.com 600V, 5A H-Series PFC Rectifier General Description Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 5 600 18.9 1.59 0.86 Utilizing proprietary Qspeed technology this device has the lowest QRR of any 600V Silicon

Contextual Info: CD6C60S Sensitive Gate Silicon Controlled Rectifiers Symbol ○ 2. Anode IT RMS = 5A ▼ ○ 1.Cathode TO-252 BVDRM = 600V ITSM = 36A 3.Gate 1 2 ○ 3 Features ◆ ◆ Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 5 A ) Non-isolated TO-252 Package

Contextual Info: 5JL2CZ47 TOSHIBA HIGH EFFICIENCY DIODE STACE HED SILICON EPITAXIAL TYPE 5JL2CZ47 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 600V l Average Output Rectified Current : IO = 5A

Contextual Info: Connectors Rail Mount Terminal Blocks N512-BK NFT2-_ _ color NFT3-_ _(color) Specifications Specifications Specifications Description: Rail mount terminal block. Rating: 5A, 600V; 20A, 300V Center Spacing: 0.197" (5.00mm) Number of Poles: 12 Circuits Per Foot: 60

PS21542-N

Abstract: planar transformer mounting in pcb
Contextual Info: MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR <Intelligent <Intelligent Power Power Module> Module> PS21542-N PS21542-N TRANSFER-MOLD TRANSFER-MOLD TYPE TYPE INSULATED INSULATED TYPE TYPE PS21542-N INTEGRATED POWER FUNCTIONS 600V/5A low-loss 4th generation planar IGBT inverter

PS21552-N

Contextual Info: MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR <Intelligent <Intelligent Power Power Module> Module> PS21552-N PS21552-N TRANSFER-MOLD TRANSFER-MOLD TYPE TYPE INSULATED INSULATED TYPE TYPE PS21552-N INTEGRATED POWER FUNCTIONS 600V/5A low-loss 4th generation planar IGBT inverter

PS21352-N

Abstract: 3th2
Contextual Info: MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR <Intelligent <Intelligent Power Power Module> Module> PS21352-N PS21352-N TRANSFER-MOLD TRANSFER-MOLD TYPE TYPE INSULATED INSULATED TYPE TYPE PS21352-N INTEGRATED POWER FUNCTIONS 600V/5A low-loss 4th generation planar IGBT inverter

delay timer circuit diagram

Abstract: PS21342-N
Contextual Info: MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR <Intelligent <Intelligent Power Power Module> Module> PS21342-N PS21342-N TRANSFER-MOLD TRANSFER-MOLD TYPE TYPE INSULATED INSULATED TYPE TYPE PS21342-N INTEGRATED POWER FUNCTIONS 600V/5A low-loss 4th generation planar IGBT inverter

5JL2CZ47

Abstract: 600v 2A ultra fast recovery diode
Contextual Info: 5JL2CZ47 TOSHIBA HIGH EFFICIENCY DIODE STACE HED SILICON EPITAXIAL TYPE 5JL2CZ47 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current : IO = 5A Ultra Fast Reverse-Recovery Time

15V 5A Power Supply Schematic

Abstract: IGBT 600V 5A
Contextual Info: 1MBC05-060,1MBC05D-060, 1MBG05D-060 Molded IGBT 600V / 5A Molded Package Features • Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness RBSOA, SCSOA etc. · Comprehensive line-up

E80276

Abstract: PS21962-AT PS21962-CT PS21962-T PS21962-TW
Contextual Info: MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21962-T/-AT/-CT/-TW TRANSFER-MOLD TYPE INSULATED TYPE PS21962-T INTEGRATED POWER FUNCTIONS 600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion

1MBG05D-060

Abstract: 1MBC05D-060
Contextual Info: 1MBC05-060,1MBC05D-060, 1MBG05D-060 Molded IGBT 600V / 5A Molded Package Features • Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness RBSOA, SCSOA etc. · Comprehensive line-up

PS21962-4S

Abstract: E80276
Contextual Info: MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21962-4S TRANSFER-MOLD TYPE INSULATED TYPE PS21962-4S INTEGRATED POWER FUNCTIONS 600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion. Open emitter type.

Contextual Info: MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21962-T/-AT/-CT/-TW TRANSFER-MOLD TYPE INSULATED TYPE PS21962-T INTEGRATED POWER FUNCTIONS 600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion

Contextual Info: MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21962-ST TRANSFER-MOLD TYPE INSULATED TYPE PS21962-ST INTEGRATED POWER FUNCTIONS 600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion. Open emitter type.

1MBC05-060

Abstract: 1MBC05D-060 1MBG05D-060 IC100 scsoa IGBT 600V 5A
Contextual Info: 1MBC05-060,1MBC05D-060, 1MBG05D-060 Molded IGBT 600V / 5A Molded Package Features • Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness RBSOA, SCSOA etc. · Comprehensive line-up

Contextual Info: 5JL2CZ47 HIGH EFFICIENCY DIODE STACK HED SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. • Repetitive Peak Reverse Voltage : Vggj^=600V • Average Output Rectified Current : Iq =5A • Ultra Fast Reverse-Recovery Time : t r r ^ O 118 MAX,

Contextual Info: MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21962-4S TRANSFER-MOLD TYPE INSULATED TYPE PS21962-4S INTEGRATED POWER FUNCTIONS 600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion. Open emitter type.

Contextual Info: MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21962-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE PS21962-4 INTEGRATED POWER FUNCTIONS 600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion