600V 4A BRIDGE Search Results

LN4SB60

Contextual Info: SHINDENGEN General Purpose Rectifiers iLow Noise Bridges OUTLINE DIMENSIONS LN4SB60 Case : 3S Unit : mm 600V 4A FEATURES Low noise SIL Package High IFSM APPLICATION Switching power supply Home (Electrical) Appliances Office Equipment, Telecommunication,

D3SB60

Contextual Info: SHINDENGEN General Purpose Rectifiers SIL Bridges OUTLINE DIMENSIONS D3SB60 Unit : mm 600V 4A FEATURES Thin Single In-Line Package High IFSM Applicable to Automatic Insertion APPLICATION Switching power supply Home Appliances, Office Equipment Telecommunication, Factory Automation

D4SB60L

Abstract: D4SB60L shindengen
Contextual Info: SHINDENGEN General Purpose Rectifiers SIL Bridges OUTLINE DIMENSIONS D4SB60L Unit : mm 600V 4A RATINGS œAbsolute Maximum Ratings iIf not specified Tl=25Ž) Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature Maximum Reverse Voltage

D3SBA60

Contextual Info: SHINDENGEN General Purpose Rectifiers SIL Bridges OUTLINE DIMENSIONS D3SBA60 Unit : mm 600V 4A FEATURES Thin Single In-Line Package High IFSM Applicable to Automatic Insertion APPLICATION Switching power supply Home Appliances, Office Equipment Telecommunication, Factory Automation

Contextual Info: MINIBRIDGE 50 ns. ULTRA-FAST RECOVERY 2 to 6 Amperes SINGLE-PHASE, FULL-WAVE BRIDGES HEAT SINK • CHASSIS • PC BOARD MOUNTING BRUS5 5A PC BOARD MOUNTING 6A HEAT SINK MOUNTING BRUS1 3A PC MOUNTING 4A HEAT SINK MOUNTING PRV/LEG 50V 100V 200V 400V 500V 600V

s4vb 10

Abstract: s4vb Diode s4vb s4vb 10 20 S4VB data sheet s4vb shindengen 10F-A10 600V4 S4VB60
Contextual Info: SHINDENGEN Square In-line Package Bridge Diode OUTLINE DIMENSIONS S4VB60 Case : S4VB Unit : mm 600V 4A RATINGS ● Absolute Maximum Ratings Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature Maximum Reverse Voltage VRM IO 50Hz sine wave, R-load, Ta=40℃ With heatsink θfa=10℃/W

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability

utc 4n60l

Abstract: 4n60e mosfet 4n60 utc 4n60g 4N60 4n60l 4N60-E UTC4N60 4N60G-TQ3-T A4N60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability

tc 971

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60-N Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-N is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60K Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 4N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

4n60zg

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60Z-E Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60Z-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

4n60l

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60-Q Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60-E Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

mosfet 4n60

Abstract: 4n60e
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60-E Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

s4vb

Abstract: Diode s4vb S4VB60 s4vb 10 DIODE marking 33 marking 33 diode S4VB data sheet diode marking 17 diode bridge 2A
Contextual Info: SQ I P 型 Bridge Diode Square In-line Package •外観図 OUTLINE S4VB60 Unit : mm Weight : 5.2g （typ.） Package：S4VB 600V 4A ② ① 特長 • 耐湿性に優れ高信頼性 • 高耐熱性 • 低 IR ④ 25 7.5 Feature + S4VB • High-Reliability

4n60

Abstract: 4n60c mosfet 4n60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60-C Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 4N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

utc 4n60l

Abstract: 4N60L-TA3-T 4n60l 4n60e mosfet 4n60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 TO-220 „ DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

D3SBA60

Contextual Info: î/y ^ n /'fy ^ 'fy M - j'j v V ÿ 'C t - F Single In-line Package Bridge Diode • ^ ^ H l OUTLINE DIMENSIONS Package : 3S D3SBA TO 600V 4A 45 £1 •»süsiPA’y ' r - y •UL1SW UL File No,E 142422 • H I fsm (D © Unit : mm («fiLtCDSâSEOLYCB:, }£EPtt«£C!B18< fc'ÎU)

D4SB60L

Contextual Info: Bridge Diode Low Noise type Single In-line Package OUTLINE D4SB60L Unit : mm Weight : 3.9g typ. Package 3S 600V 4A 管理番号（例） Control No. 品名 Type No. • SIP • UL E142422 • IFSM • 4.6 D4SB 60L 0264 15 ＋ ① Feature • • • • ロット記号（例）

Contextual Info: —»•ii 7 U y y v At y -iy ^ 'f t - '" L" Low Noise Bridge b Bridge Diode Single In-line Package OUTLINE DIMENSIONS LN4SBD 600V 4A 1# •ey-cx • s ip y ^ y tr - y i § j l FSM •S R B S • t v , mm •O A . affl. FA RATINGS Absolute Maximum Ratings

Contextual Info: B /4 X J U y !f Low Noise Bridge Single In-line Package Bridge Diode •*W fN -äsH OUTLINE DIMENSIONS LN4SB60 TO 600V 4A 45 £1 •U L1S W UL File No,E 1 4 2 4 2 2 •S IP K 'j/ir-y • S I fsm RATINGS Absolute Maximum Ratings 1 a Item Storage Temperature

D4SB60L

Contextual Info: Bridge Diode Low Noise type Single In-line Package •*WfN-äsH OUTLINE DIMENSIONS Package : 3S D4SB60L TO 600V 4A 45 £1 • * iü s iP A ’ s/$— y •UL1SW UL File No,E 1 4 2 4 2 2 •H B J E E x H I fsm Unit : mm («fiLtCDSnîEOLYCB:, M ì£fàm RATINGS