600V 20A DIODE Search Results

w20nm60

Abstract: w20nm60fd P20NM60FD STF20NM60D F20NM60D STP20NM60FD STW20NM60FD p20nm60 mosfet 600V 100A ST
Contextual Info: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD

APT30DS60B

Abstract: APT30DS60S APT6017BLL 400v high speed diode
Contextual Info: 2 1 TO -24 7 D3PAK 1 - Cathode 2 2 - Anode 1 1 2 1 2 APT30DS60B 600V APT30DS60S 600V 20A 20A 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times

Contextual Info: 2 1 TO -24 7 1 - Cathode 2 2 - Anode 1 D3PAK 1 2 1 APT30DS60B 600V APT30DS60S 600V 20A 20A 2 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times

Contextual Info: 2 1 TO -24 7 D3PAK 1 - Cathode 2 2 - Anode 1 1 2 1 2 APT30DS60B G 600V 20A APT30DS60S(G) 600V 20A *G Denotes RoHS Compliant, Pb Free Terminal Finish. 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS

B20NM60D

Abstract: JESD97 STB20NM60D
Contextual Info: STB20NM60D N-channel 600V - 0.26Ω - 20A - D2PAK FDmesh Power MOSFET General features Type VDSS RDS on ID Pw STB20NM60D 600V <0.29Ω 20A 45W • High dv/dt and avalanche capabilities ■ 100% Avalanche tested ■ Low input capacitance and gate charge

mosfet 600V 20A

Abstract: Mosfet 600V, 20A
Contextual Info: FCB20N60F_F085 600V N-Channe MOSFET D D 600V, 20A, 190mΩ Features G „ Typ rDS on = 171mΩ at VGS = 10V, ID = 20A „ Typ Qg(tot) = 78nC at VGS = 10V, ID = 20A G „ UIS Capability TO-263AB FDB SERIES S „ RoHS Compliant „ Qualified to AEC Q101 S For current package drawing, please refer to the Fairchild

Contextual Info: R6020ENJ Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source

R6020ENX

Contextual Info: R6020ENX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.20W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

IRAMY20UP60B

Abstract: 3 phase inverter schematic diagram 3 phase rectifier circuit diagram igbt AC Motor Speed Controller data 8873 IGBT DRIVER SCHEMATIC IGBT DRIVER SCHEMATIC 3 PHASE Integrated Power Hybrid IC for appliance motor marking R1E schematic PWM inverter
Contextual Info: PD-96955 Rev.C Integrated Power Hybrid IC for Appliance Motor Drive Applications. Description IRAMY20UP60B Series 20A, 600V with Internal Shunt Resistor International Rectifier's IRAMY20UP60B is a 20A, 600V Integrated Power Hybrid IC with Internal Shunt Resistor for Appliance Motor Drives applications such as air conditioning systems and compressor drivers as

R6020ENZ

Contextual Info: R6020ENZ1 Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

Contextual Info: R6020ENZ Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

Contextual Info: Ordering number : ENA2196 NGTB20N60L2TF1G N-Channel IGBT http://onsemi.com 600V, 20A, VCE sat ;1.45V TO-3PF-3L with Low VF Switching Diode Features • IGBT VCE(sat)=1.45V typ. (IC=20A, VGE=15V) • IGBT tf=67ns typ. • Diode VF=1.5V typ. (IF=20A) • Diode trr=70ns typ.

Contextual Info: PD-96956 Rev. A Integrated Power Hybrid IC for Appliance Motor Drive Applications IRAMX20UP60A Series 20A, 600V with open Emitter Pins Description International Rectifier's IRAMX20UP60A is a 20A, 600V Integrated Power Hybrid IC for Appliance Motor Drives applications such as air conditioning systems and compressor drivers as well as in light industrial

IGBT CM20MD-12H

Abstract: CM20MD-12H E80276
Contextual Info: MITSUBISHI IGBT MODULES CM20MD-12H MEDIUM POWER SWITCHING USE INSULATED TYPE CM20MD-12H ¡IC . 20A ¡VCES . 600V ¡Insulated Type

DIODE MARKING GU

Abstract: MARKING GU DIODE CM20MD3-12H E80276 E80271
Contextual Info: MITSUBISHI IGBT MODULES CM20MD3-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE CM20MD3-12H ¡IC . 20A ¡VCES . 600V

CM20A

Abstract: CM20AD00-12H diagram of forward reverse motor dc to ac inverter by thyristor Gate Turn-off Thyristor 600V 20A
Contextual Info: MITSUBISHI IGBT MODULES CM20AD00-12H MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE CM20AD00-12H ¡IC . 20A ¡VCES . 600V ¡Insulated Type

Contextual Info: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C High Speed Switching Low Saturation Voltage VCE sat ,Typ.=1.8V@IC=20A Built-in Fast Recovery Diode VCES 600V IC 20A C C G E E Absolute Maximum Ratings

Contextual Info: FCB20N60_F085 N-Channel MOSFET November 2013 FCB20N60_F085 N-Channel MOSFET 600V, 20A, 198mΩ D D Features „ Typ rDS on = 173mΩ at VGS = 10V, ID = 20A „ Typ Qg(tot) = 72nC at VGS = 10V, ID = 20A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101

Contextual Info: FCB20N60F_F085 N-Channel MOSFET December 2013 FCB20N60F_F085 N-Channel MOSFET 600V, 20A, 190mΩ D D Features „ Typ rDS on = 171mΩ at VGS = 10V, ID = 20A „ Typ Qg(tot) = 78nC at VGS = 10V, ID = 20A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101

a4006

Abstract: SIDC09D60E6
Contextual Info: SIDC09D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC09D60E6 600V IF 20A A This chip is used for:

SIDC09D60E

Contextual Info: Preliminary SIDC09D60E Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC09D60E 600V ICn 20A A This chip is used for:

Contextual Info: FGP20N60UFD tm 600V, 20A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.8V @ IC = 20A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new series

IRAMX20UP60B

Abstract: IR21365 DT97-3 VSS232 IRAMX20UP60A E252584
Contextual Info: PD-96956 Rev D Integrated Power Hybrid IC for Appliance Motor Drive Applications IRAMX20UP60A Series 20A, 600V with open Emitter Pins Description International Rectifier's IRAMX20UP60A is a 20A, 600V Integrated Power Hybrid IC for Appliance Motor Drives applications such air conditioning systems and compressor drivers as well as in light industrial application. IR's technology offers an extremely compact, high performance AC motor-driver in a single isolated

F25NM60N

Abstract: P25NM60N STB25NM60N STB25NM60N-1 STF25NM60N STP25NM60N STW25NM60N W25NM60N 850mj
Contextual Info: STB25NM60N/-1 - STF25NM60N STP25NM60N - STW25NM60N N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 3 STB25NM60N 650V <0.170Ω 20A STB25NM60N-1 650V <0.170Ω