600V 200A TR Search Results

CM200RX-12A

Abstract: cm200rx
Contextual Info: MITSUBISHI IGBT MODULES CM200RX-12A HIGH POWER SWITCHING USE CM200RX-12A ¡IC . 200A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake

Contextual Info: MITSUBISHI IGBT MODULES CM200TL-12NF HIGH POWER SWITCHING USE CM200TL-12NF ¡IC . 200A ¡VCES . 600V ¡Insulated Type ¡6-elements in a pack

100A/IGBT

Abstract: CM200RL-12NF snubber resistance of IGBT
Contextual Info: MITSUBISHI IGBT MODULES CM200RL-12NF HIGH POWER SWITCHING USE CM200RL-12NF ¡IC . 200A ¡VCES . 600V ¡Insulated Type ¡7-elements in a pack

CM200DU-12F

Contextual Info: MITSUBISHI IGBT MODULES CM200DU-12F HIGH POWER SWITCHING USE CM200DU-12F ¡IC . 200A ¡VCES . 600V ¡Insulated Type ¡2-elements in a pack

INDUCTION HEATING POWER SUPPLY

Abstract: CM200DU-12NFH induction heating 30khz
Contextual Info: MITSUBISHI IGBT MODULES CM200DU-12NFH HIGH POWER SWITCHING USE CM200DU-12NFH ¡IC . 200A ¡VCES . 600V ¡Insulated Type ¡2-elements in a pack

CM200TU-12F

Contextual Info: MITSUBISHI IGBT MODULES CM200TU-12F HIGH POWER SWITCHING USE CM200TU-12F ¡IC . 200A ¡VCES . 600V ¡Insulated Type ¡6-elements in a pack

CM200DY-12NF

Abstract: 80A06
Contextual Info: MITSUBISHI IGBT MODULES CM200DY-12NF HIGH POWER SWITCHING USE CM200DY-12NF ¡IC . 200A ¡VCES . 600V ¡Insulated Type ¡2-elements in a pack

CM200DU-12NFH

Abstract: INDUCTION HEATING POWER SUPPLY
Contextual Info: MITSUBISHI IGBT MODULES CM200DU-12NFH HIGH POWER SWITCHING USE CM200DU-12NFH ¡IC . 200A ¡VCES . 600V ¡Insulated Type ¡2-elements in a pack

CM200TU-12F

Contextual Info: MITSUBISHI IGBT MODULES CM200TU-12F HIGH POWER SWITCHING USE CM200TU-12F ¡IC . 200A ¡VCES . 600V ¡Insulated Type ¡6-elements in a pack

CM200DU-12F

Contextual Info: MITSUBISHI IGBT MODULES CM200DU-12F HIGH POWER SWITCHING USE CM200DU-12F ¡IC . 200A ¡VCES . 600V ¡Insulated Type ¡2-elements in a pack

CM200DY-12NF

Contextual Info: MITSUBISHI IGBT MODULES CM200DY-12NF HIGH POWER SWITCHING USE CM200DY-12NF ¡IC . 200A ¡VCES . 600V ¡Insulated Type ¡2-elements in a pack

100A/IGBT

Abstract: CM200RL-12NF
Contextual Info: MITSUBISHI IGBT MODULES CM200RL-12NF HIGH POWER SWITCHING USE CM200RL-12NF ¡IC . 200A ¡VCES . 600V ¡Insulated Type ¡7-elements in a pack

CM200DU-12F

Contextual Info: MITSUBISHI IGBT MODULES CM200DU-12F HIGH POWER SWITCHING USE CM200DU-12F ¡IC . 200A ¡VCES . 600V ¡Insulated Type ¡2-elements in a pack

L7601A

Abstract: SIGC100T60R3 600V200A
Contextual Info: SIGC100T60R3 3 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE sat • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC100T60R3 VCE ICn 600V 200A This chip is used for:

Contextual Info: Advance Technical Information XPTTM 600V GenX3TM VCES IC110 VCE sat tfi(typ) IXXK200N60C3 IXXX200N60C3 Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 200A 2.1V 80ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C

IXXX200N60B3

Contextual Info: Advance Technical Information XPTTM 600V GenX3TM IXXK200N60B3 IXXX200N60B3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 200A 1.7V 110ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C

Contextual Info: Advance Technical Information XPTTM 600V GenX3TM VCES IC110 VCE sat tfi(typ) IXXK200N60B3 IXXX200N60B3 Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 200A 1.7V 110ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C

STGE200NB60S

Abstract: GE200NB60S JESD97 M1113
Contextual Info: STGE200NB60S N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT General features TYPE VCES VCE sat STGE200NB60S 600V (typ.) 1.2V 1.3V IC TC 150A 200A 100°C 25°C • High input impedance (voltage driven) ■ Low on-voltage drop (Vcesat) ■ Off losses include tail current

MIMMF200S060DK

Abstract: MIMMF200S060DK2B
Contextual Info: MIMMF200S060DK MIMMF200S060DK2B 600V 200A FRED Module RoHS Compliant PRODUCT FEATURES Ultrafast Reverse Recovery Time Soft Reverse Recovery Characteristics Low Reverse Recovery Loss Low Forward Voltage High Surge Current Capability Low Inductance Package APPLICATIONS

CM200TU-12H

Abstract: E80276
Contextual Info: 三菱半導体〈IGBTモジュール〉 CM200TU-12H 大電力スイッチング用 絶縁形 CM200TU-12H ¡IC . 200A ¡VCES . 600V

CM200DU-12H

Contextual Info: 三菱半導体〈IGBTモジュール〉 CM200DU-12H 大電力スイッチング用 絶縁形 CM200DU-12H ¡IC . 200A ¡VCES . 600V

MIMMF200S060B

Contextual Info: MIMMF200S060B MIMMF200S060B2B 600V 200A FRED Module RoHS Compliant PRODUCT FEATURES Ultrafast Reverse Recovery Time Soft Reverse Recovery Characteristics Low Reverse Recovery Loss Low Forward Voltage High Surge Current Capability Low Inductance Package APPLICATIONS

C2E1

Abstract: CM200E3U-12H
Contextual Info: 三菱半導体〈IGBTモジュール〉 CM200E3U-12H 大電力スイッチング用 絶縁形 CM200E3U-12H ¡IC . 200A ¡VCES . 600V

IXGN200N60B3

Abstract: 9V DC INPUT and gate ic 200N60B3 IGBT 100V 100A igbt 100a 150v SOT227B 123B16
Contextual Info: IXGN200N60B3 GenX3TM 600V IGBT VCES = 600V IC110 = 200A VCE sat ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ