600V 100A DIE SIZE Search Results

A001

Abstract: SIDC81D120E6 4202P IF100A
Contextual Info: Preliminary SIDC81D120E6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC81D120E6 1200V 100A A This chip is used for:

Contextual Info: Preliminary SIDC53D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC53D120H6 1200V 100A A This chip is used for:

Contextual Info: Preliminary SIDC81D120E6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC81D120E6 1200V 100A A This chip is used for:

A001

Abstract: SIDC81D120F6
Contextual Info: Preliminary SIDC81D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC81D120F6 1200V 100A A This chip is used for:

Contextual Info: Preliminary SIDC81D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC81D120F6 1200V 100A A This chip is used for:

Contextual Info: PD - 96272 IRG7CH75K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution

IRG7CH75K10B

Abstract: IRG7CH MIL-HDBK-263
Contextual Info: PD - 96272A IRG7CH75K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution

Q67050-A4100

Abstract: SIDC53D120H6 4392S
Contextual Info: Preliminary SIDC53D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC53D120H6 1200V 100A A This chip is used for:

Contextual Info: Preliminary SIDC42D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type SIDC42D60E6 VR 600V IF 100A A This chip is used for:

4-400A

Abstract: 4193M
Contextual Info: Preliminary SIDC42D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type SIDC42D60E6 VR 600V IF 100A A This chip is used for:

7462-S

Abstract: A003 SIGC81T60SNC
Contextual Info: Preliminary SIGC81T60SNC IGBT Chip in NPT-technology FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type SIGC81T60SNC VCE 600V ICn 100A C This chip is used for: • IGBT-Modules

Contextual Info: SIGC81T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • IGBT-Modules G Applications: • drives Chip Type VCE

600v 100a die size

Abstract: SIGC81T60SNC
Contextual Info: SIGC81T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • IGBT-Modules G Applications: • drives Chip Type VCE

SIGC81T60NC

Contextual Info: Preliminary SIGC81T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • IGBT-Modules G Applications: • drives Chip Type

SIGC81T60N

Contextual Info: Preliminary SIGC81T60N IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • IGBT-Modules G Applications: • drives Chip Type

SIGC81T60NC

Contextual Info: SIGC81T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • IGBT-Modules G Applications: • drives Chip Type VCE ICn

ic 7462

Contextual Info: Preliminary SIGC81T60NC IGBT Chip in NPT-technology FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE ICn SIGC81T60NC 600V 100A C This chip is used for: • IGBT-Modules

8ETL06

Contextual Info: PD - 20989 FD100T06A5B FRED Die in Wafer Form # # 600V VF = 1.1 V max. 5" Wafer 100% Tested at Probe ! Available in Tape and Reel , Chip Pack, and Sawn on Film "(upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter

a4100

Abstract: dt 5329 SIDC53D120H 4392H
Contextual Info: Preliminary SIDC53D120H Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE ICn SIDC53D120H 1200V 100A A This chip is used for:

Contextual Info: PD - 20987 FD120T06A5B FRED Die in Wafer Form # # 600V VF = 1.1 V max. 5" Wafer 100% Tested at Probe ! Available in Tape and Reel, Chip Pack, and Sawn on Film " (upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter

Contextual Info: I - 0517J rev. B FD100U06A5B FRED Die in Wafer Form z 600V VF = 1.25V typ. 5" Wafer 100% Tested at Probe c Electrical Characteristics Parameter VFM VFM VRRM IRM trr Description Typical Forward Voltage Typical Forward Voltage Minimum Reverse Breakdown Voltage

Contextual Info: I - 0517J rev. A FD100U06A5B FRED Die in Wafer Form z 600V VF = 1.25V typ. 5" Wafer 100% Tested at Probe c Electrical Characteristics Parameter VFM VFM VRRM IRM trr Description Typical Forward Voltage Typical Forward Voltage Minimum Reverse Breakdown Voltage

FD100W06A5F

Abstract: FD100W06A5B
Contextual Info: PD - 20990 FD100W06A5B FRED Die in Wafer Form # # 600V VF = 3.0 V max. 5" Wafer 100% Tested at Probe ! Available in Tape and Reel , Chip Pack, and Sawn on Film "(upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter

Contextual Info: PD - 20988 FD120W06A5B FRED Die in Wafer Form # # 600V VF = 3.2 V max. 5" Wafer 100% Tested at Probe ! Available in Tape and Reel, Chip Pack, and Sawn on Film " (upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter