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CEF740A Contextual Info: CEF740A P R E L IM IN A R Y N-Channel Enhancement Mode Field Effect Transistor FEATURES • 400V , 5 . 4 A , R ds on =600itiQ @VGS=10V. • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability. • TO-220F full-pak for through hole.	OCR Scan	CEF740A 600itiQ O-22QF to-220f CEF740A	PDF

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CEF740A

Contextual Info: CEF740A P R E L IM IN A R Y N-Channel Enhancement Mode Field Effect Transistor FEATURES • 400V , 5 . 4 A , R ds on =600itiQ @VGS=10V. • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability. • TO-220F full-pak for through hole.

OCR Scan

CEF740A 600itiQ O-22QF to-220f CEF740A

PDF