600 VOLT N CHANNEL POWER MOSFET Search Results

IXTM20N60

Abstract: SHD239607 mosfet 300V 10A type
Contextual Info: SHD239607 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 600 Volt, 0.35 Ohm MOSFET • Isolated and Hermetically Sealed • Surface Mount Package • Electrically equivalent to IXTM20N60 MAXIMUM RATINGS

mosfet 300v 10a

Contextual Info: SENSITRON SEMICONDUCTOR SHD239607 TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed œ Surface Mount Package œ Electrically equivalent to IXTM20N60 MAXIMUM RATINGS

IXFM20N60

Abstract: SHD239608
Contextual Info: SHD239608 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 703, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 600 Volt, 0.35 Ohm MOSFET • Isolated and Hermetically Sealed • Surface Mount Package • Electrically equivalent to IXFM20N60 MAXIMUM RATINGS

Contextual Info: SENSITRON SEMICONDUCTOR SHD239607 TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed œ Surface Mount Package œ Electrically equivalent to IXTM20N60 MAXIMUM RATINGS

mosfet 300V 10A

Abstract: 300v 10 amp n-channel mosfet
Contextual Info: SENSITRON SEMICONDUCTOR SHD225608 TECHNICAL DATA DATA SHEET 915, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 20 Amp, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT

Amp. mosfet 1000 watt

Abstract: SHD225608
Contextual Info: SENSITRON SEMICONDUCTOR SHD225608 TECHNICAL DATA DATA SHEET 915, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 20 Amp, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT

Contextual Info: SENSITRON SEMICONDUCTOR SHD218513 SHD218513A SHD218513B TECHNICAL DATA DATA SHEET 747, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.60 Ohm, 11A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRFPC50

Contextual Info: SHD258624 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4975, REV. - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 600 VOLT, 44 AMP, 0.15 RDS ON MOSFET IN A HERMETIC TO-267 PACKAGE. MAX. RATINGS / ELECTRICAL CHARACTERISTICS (AT Tj=25 C UNLESS OTHERWISE SPECIFIED).

Contextual Info: SENSITRON SEMICONDUCTOR SHD218513 SHD218513A SHD218513B TECHNICAL DATA DATA SHEET 747, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.60 Ohm, 11A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRFPC50

IRFPC50

Abstract: SHD218513 SHD218513A SHD218513B
Contextual Info: SHD218513 SHD218513A SHD218513B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 747, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 600 Volt, 0.60 Ohm, 11A MOSFET • Isolated Hermetic Metal Package • Fast Switching • Low RDS on • Electrically Equivalent to IRFPC50

SMM70N10

Abstract: SFF70N10M SFF70N10Z
Contextual Info: SFF70N10M SFF70N10Z SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 70 AMP 600 VOLT 0.030Ω N-CHANNEL POWER MOSFET DESIGNER'S DATA SHEET FEATURES: • Rugged construction with poly silicon gate

SFF70N10M

Abstract: SMM70N10
Contextual Info: S im ili PREL.MINARY SFF70N10M SFF70N10WZ SOLID STATE DEVICES, INC CA 14849 Firestone Boulevard - La Mirada, 90638 Phone: (714 670-SSDI (7734) Fax: (714) 522-7424 Designer’s Datasheet 70 AMP 600 VOLT 0.030 Q N-CHANNEL POWER MOSFET | FEATURES: • •

IX6R11P7

Contextual Info: IX6R11 600 Volt, 6 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 600V • ± 50V/ns dV/dt immunity

10M90S

Abstract: IXTH14N60P IX6R11 IX6R11S3 IX6R11P7 IXFH14N100Q IXCP 10M90 DSEI12-10A igbt 500V 22A
Contextual Info: IX6R11 600 Volt, 6 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 600V • ± 50V/ns dV/dt immunity

SFF70N10C

Abstract: SMM70N10
Contextual Info: SFF70N10C ^OLID STATE DEVICES, INC *<»49 Firestone Boulevard La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 70 AMP 600 VOLT 0.030 Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with poly silicon gate Ultra Low RDS(on) and high transconductance

Contextual Info: SENSITRON SEMICONDUCTOR SHD225515 TECHNICAL DATA DATA SHEET 2027, REV. A HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 600 VOLT, 16 AMP, 0.40 OHM MOSFET IN A HERMETIC TO-254 PACKAGE. MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

600 volt mosfet

Abstract: SHD225515
Contextual Info: SENSITRON SEMICONDUCTOR SHD225515 TECHNICAL DATA DATA SHEET 2027, REV. A HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 600 VOLT, 16 AMP, 0.40 OHM MOSFET IN A HERMETIC TO-254 PACKAGE. MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

SFF70N10C

Abstract: SMM70N10
Contextual Info: SFF70N10C SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 70 AMP 600 VOLT 0.030Ω N-CHANNEL POWER MOSFET DESIGNER'S DATA SHEET FEATURES: • Rugged construction with poly silicon gate • Ultra low RDS (on) and high transconductance

SFF16N60NC

Contextual Info: SFF16N60NC SOLID STATE DEVICES, INC 19 Firestone Boulevard La Mirada,CA 90638 . .tone: 714 670-SSDI (7734) Fax: (714) 522-7424 16.5 AMP 600 VOLT 0.40 £2 N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: • ■ ■ ■ ■ ■ ■ ■ ■ ■ Rugged construction with poly silicon gate

4410 SO-8

Abstract: irf7389pbf IRF7343TRPBF IRG4PH30KPBF IRG4PC40FD IRFP4232PBF IRG4PC40UPBF IRG4PH50SPBF 247AA IRFR220NTRPBF
Contextual Info: 1967-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 1967 25 Power MOSFETs and IGBTs RoHS N Channel, 150 Volt VDSS VGS V ID (A) Power (W) RDS(on) (Ω) RTH (JC) (°C/W) Gate Drive Package EACH 70016952 70016954 70017481 70017261 70017492 70017500 70017262 70017029

irfp460pbf

Abstract: irf740 IRFP360PBF IRFL9014PBF IRF840PBF IRFP064 IRF9630PBF IRFD9110 339 D-PAK IRLL110
Contextual Info: 2008-2012:QuarkCatalogTempNew 9/20/12 4:30 PM Page 2008 INTERCONNECT TEST & MEASUREMENT 25 Power MOSFETs P Channel Power MOSFETs RoHS P Channel, –60 Volt VDSS D-PAK Stock No. Mfr.’s Type VGS V ID (A) Power (W) RDS(on) (Ω) RTH (JC) (°C/W) Gate Drive

Contextual Info: PRODUCT DATASHEET AAT4910 FastSwitchTM 28V Half-Bridge Dual N-Channel MOSFET Driver Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT4910 is a 28V half- bridge dual MOSFET driver for high- current DC- DC convert er and m ot or driver applicat ions. I t drives bot h high- side and low- side N- channel

HC08MP16

Abstract: ac motor speed control circuit diagram with IGBT schematic diagram motor control using pwm module 1 HP SINGLE PHASE induction motor speed control using pwm inverter use igbt for 3 phase induction motor PWM generator for IGBT DC MOTOR SPEED CONTROL USING IGBT MGB20N40CL circuit diagram MC33153 12 volt dc to 220 volt ac inverter schematic
Contextual Info: BR1480/D Silicon Solutions for Off Line Motor Drives • Application Specific MCU’s • Optoisolators • MOS Gate Drivers and Control IC’s • Discrete Insulated Gate Bipolar Transistors • Input Rectifiers • Hybrid IGBT Power Modules • High Voltage MOSFETS for Power Supply

TRANSISTOR MOTOROLA MAC 223

Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
Contextual Info: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),