600 V POWER SCHOTTKY SILICON CARBIDE DIODE Search Results

Contextual Info: MSiCSS10060CC Compliant Silicon Carbide Dual Schottky Power Rectifier 10A, 600V DESCRIPTION This high current Silicon Carbide Schottky is rated up to 600 V and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing

Contextual Info: MSiCSS10060CC Compliant Silicon Carbide Dual Schottky Power Rectifier 10A, 600V DESCRIPTION This high current Silicon Carbide Schottky is rated up to 600 V and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing

Contextual Info: MSiCSS10060CC Compliant Silicon Carbide Dual Schottky Power Rectifier 10A, 600V DESCRIPTION This high current Silicon Carbide Schottky is rated up to 600 V and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing

Contextual Info: STPSC1206 600 V power Schottky silicon carbide diode Features • No reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode Description K These diodes are manufactured using silicon carbide substrate. This wide bandgap material

STPSC1206D

Abstract: STPSC1206 16288
Contextual Info: STPSC1206 600 V power Schottky silicon carbide diode Features • No reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode Description A K These diodes are manufactured using silicon carbide substrate. This wide bandgap material

Contextual Info: MSiCSS10060 Compliant Silicon Carbide Schottky Power Rectifier 10A, 600V DESCRIPTION These high current Silicon Carbide Schottkys are rated up to 600 V and offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to

U4 Package

Contextual Info: MSiCSS10060 Compliant Silicon Carbide Schottky Power Rectifier 10A, 600V DESCRIPTION These high current Silicon Carbide Schottkys are rated up to 600 V and offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to

msc 0645

Contextual Info: MSiCSN10060 Silicon Carbide Schottky Power Rectifier 10A, 600V Available DESCRIPTION This 600 V rated SiC Schottky rectifier is in a hermetically sealed package and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to

msc 0645

Contextual Info: MSiCSN10060 Available Silicon Carbide Schottky Power Rectifier 10A, 600V DESCRIPTION This 600 V rated SiC Schottky rectifier is in a hermetically sealed package and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to

Contextual Info: MSiCSN10060 Available Silicon Carbide Schottky Power Rectifier 10A, 600V DESCRIPTION This 600 V rated SiC Schottky rectifier is in a hermetically sealed package and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to

Contextual Info: MSiCSN10060CC, CA, and D Available Silicon Carbide Dual Schottky Power Rectifier 10A, 600V DESCRIPTION These dual 600 V rated SiC Schottky rectifiers are in a hermetically sealed package with options for common cathode, common anode, and doubler configurations. They offer very

Contextual Info: MSiCSN10060CC, CA, and D Available Silicon Carbide Dual Schottky Power Rectifier 10A, 600V ORDERABLE PART NUMBERS MSiCSN10060CC MSiCSN10060CA MSiCSN10060D Configuration Common Cathode Common Anode Doubler DESCRIPTION These dual 600 V rated SiC Schottky rectifiers are in a hermetically sealed package with

msc 0645

Contextual Info: MSiCSN10060CC, CA, and D Available Silicon Carbide Dual Schottky Power Rectifier 10A, 600V DESCRIPTION These dual 600 V rated SiC Schottky rectifiers are in a hermetically sealed package with options for common cathode, common anode, and doubler configurations. They offer very

STPSC1006D

Abstract: JESD97
Contextual Info: STPSC1006D 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power

Contextual Info: GB02SHT06-46 High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •         RoHS Compliant 600 V Schottky rectifier 225 °C maximum operating temperature Zero reverse recovery charge Superior surge current capability

STPSC1006D

Contextual Info: STPSC1006 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power

Contextual Info: STPSC2006CW 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery A1 ■ Switching behavior independent of temperature A2 ■ Particularly suitable in PFC boost diode function K Description The SiC diode is an ultrahigh performance power

STPSC806D

Abstract: JESD97
Contextual Info: STPSC806D 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power

STPSC806

Abstract: STPSC806D
Contextual Info: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power

JESD97

Abstract: STPSC1006D
Contextual Info: STPSC1006D 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power

STPSC806D

Abstract: st 393 JESD97
Contextual Info: STPSC806D 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power

Contextual Info: STPSC606 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode K A K Description TO-220AC STPSC606D The SiC diode is an ultrahigh performance power

Contextual Info: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function K TO-220AC STPSC806D Description The SiC diode is an ultrahigh performance power

STPSC1006D

Abstract: STPSC1006G 16-2-87
Contextual Info: STPSC1006 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A K TO-220AC STPSC1006D Description The SiC diode is an ultrahigh performance power