NCE60T2K2I
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NCEPOWER
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NCE60T2K2I and NCE60T2K2K are N-Channel Super Junction Power MOSFETs with 600 V drain-source voltage, 2 A continuous drain current, 1.8 ohm typical RDS(ON), and low gate charge, housed in TO-251 and TO-252 packages respectively. |
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AKP60T20
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AK Semiconductor
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N-Channel Super Trench Power MOSFET with 60V drain-source voltage, 200A continuous drain current, 1.8mΩ typical RDS(on) at VGS=10V, 130nC total gate charge, and 175°C maximum operating temperature. |
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AKP60T20A
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AK Semiconductor
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N-Channel Super Trench Power MOSFET AKP60T20A with 60V drain-source voltage, 200A continuous drain current, 1.8mΩ typical RDS(ON) at VGS=10V, suitable for high-frequency switching and synchronous rectification. |
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AKP60T20D
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AK Semiconductor
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N-Channel Super Trench Power MOSFET with 60V VDS, 200A ID, 1.8mΩ typical RDS(on) at VGS=10V, optimized for high-frequency switching and synchronous rectification. |
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AKP60T20T
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AK Semiconductor
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N-Channel Super Trench Power MOSFET AKP60T20T with 60V drain-source voltage, 200A continuous drain current, 1.8mΩ typical RDS(ON) at 10V VGS, 130nC total gate charge, and 175°C maximum operating temperature. |
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NCEAP60T20D
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NCEPOWER
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NCE AP60T20D is an N-channel Super Trench Power MOSFET with 60 V drain-source voltage, 250 A continuous drain current, 1.8 mΩ typical RDS(on) at 10 V VGS, suitable for high-frequency switching and synchronous rectification in automotive and DC/DC converter applications. |
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NCE60T2K2K
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NCEPOWER
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NCE60T2K2I and NCE60T2K2K are N-channel super junction power MOSFETs with 600 V drain-source voltage, 2 A continuous drain current, 1.8 ohm typical RDS(on), and low gate charge, available in TO-251 and TO-252 packages. |
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NCE60T2K2I
