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60I
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Unknown
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Shortform Data and Cross References (Misc Datasheets) |
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60INCH-D1-P4V-MINI
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All Sensors
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Pressure Sensor: Miniature Amplified Low Pressure Sensors |
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108.55KB |
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60INCH-Dx-P4V-MINI
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All Sensors
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Pressure Sensor: Miniature Amplified Low Pressure Sensors |
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108.55KB |
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HPM6360IPA
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HPMicro Semiconductor Co Ltd
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32位RISC-V, 800KB SRAM, 4096位OTP, 128KB BOOT ROM, 24/32768Hz振荡器, 2XPI, DRAM, SDIO, 2I2S, PDM, 2PWM, 5定时器, 9UART, USB 2.0 OTG, 百兆以太网, 2CAN, 3ADC, 12位DAC, 108GPIO, AES, SM2/3/4, SHA, TRNG. |
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NCE70T260I
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NCEPOWER
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NCE70T260I, NCE70T260K are 700V N-channel super junction power MOSFETs with low on-resistance of 260 mΩ typical, advanced trench gate technology, ultra-low gate charge, and 100% avalanche tested for high reliability in SMPS, PFC, and industrial applications. |
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NCE65T260I
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NCEPOWER
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NCE65T260I and NCE65T260K are 650V N-channel super junction power MOSFETs with low on-resistance of 220 mΩ, continuous drain current of 15 A, and low gate charge, available in TO-251 and TO-252 packages. |
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AK65T260I
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AK Semiconductor
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N-Channel Super Junction Power MOSFET AK65T260K with 650 V drain-source voltage, 15 A continuous drain current, 220 mΩ typical RDS(ON), and low gate charge for high-efficiency power conversion applications. |
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HPM6E60IGN
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HPMicro Semiconductor Co Ltd
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双核32位RISC-V，2080KB SRAM，千兆以太网，4个PWM模块，17个UART，4个ADC，206个GPIO，AES-128/256，SM2/3/4，SHA-1/256。 |
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HPM6260IEP
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HPMicro Semiconductor Co Ltd
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双核32位RISC-V，800KB SRAM，4096位OTP，128KB BOOT ROM，24/32768Hz振荡器，XPI，2高分辨率PWM，5组32位定时器，9UART，3ADC，108GPIO，AES-128/256，SM2/3/4，SHA-1/256，真随机数。 |
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AK65T360I
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AK Semiconductor
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N-Channel Super Junction Power MOSFET AK65T360K with 650 V drain-source voltage, 11.5 A continuous drain current, 290 mΩ typical on-resistance, and low gate charge for high-efficiency power conversion applications. |
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JST60IS-1200BW
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Jiangsu JieJie Microelectronics Co Ltd
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60A TRIAC with 1200V repetitive peak off-state and reverse voltage, suitable for AC switching in heating, motor control, and lighting applications; features snubberless operation for inductive loads and 2500 VRMS insulation rating. |
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HPM6360IEP
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HPMicro Semiconductor Co Ltd
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32位RISC-V, 800KB SRAM, 4096位OTP, 128KB BOOT ROM, 24/32768Hz晶体, 2XPI, DRAM, SDIO, 2I2S, PDM, 2PWM, 5定时器, 9UART, USB 2.0 OTG, 百兆以太网, 2CAN, 3ADC, 12位DAC, 108GPIO, AES, SM2/3/4, SHA, 真随机数, NOR解密 |
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AK70T360I
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AK Semiconductor
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N-Channel Super Junction Power MOSFET AK70T360K with 700 V drain-source voltage, 11.5 A continuous drain current, 330 mΩ on-resistance, and low gate charge, suitable for PFC, SMPS, and industrial power applications. |
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HPM6E60IVM
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HPMicro Semiconductor Co Ltd
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双核32位RISC-V，2080KB SRAM，千兆以太网，4ADC，206GPIO，AES/SM2/SM3/SM4/SHA-1/256加密，真随机数。 |
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XL-7060IR-T6A3
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XINGLIGHT
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42mil*42mil, 940nm, silica gel, 7060 bracket, ROHS, MSL 2a-3, EIA, reflow soldering, endoscope, oximeter, remote, camera, counters, thermal, smart meter, photoelectric, wireless, signal, car, robot. |
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HPM6260IPA
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HPMicro Semiconductor Co Ltd
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双核32位RISC-V，800KB SRAM，24MHz振荡器，9 UART，3 ADC，108 GPIO，AES-128/256，SM2/3/4，SHA-1/256。 |
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JST60IS-1600BW
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Jiangsu JieJie Microelectronics Co Ltd
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60A TRIAC with 1600V repetitive peak off-state voltage, suitable for AC switching in heating, motor control, and lighting applications; features snubberless operation for inductive loads and 2500 VRMS rated insulation voltage. |
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NCE70T360I
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NCEPOWER
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NCE70T360K and NCE70T360I are 700V N-channel super junction power MOSFETs with low on-resistance of 330 mΩ typical, 11.5A continuous drain current, and low gate charge, available in TO-252 and TO-251 packages respectively. |
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NCE65T360I
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NCEPOWER
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NCE65T360K and NCE65T360I are 650V N-channel super junction power MOSFETs with low RDS(ON) of 290mΩ, 11.5A continuous drain current, low gate charge, and high avalanche capability in TO-252 and TO-251 packages. |
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HPM6360IPA
