60 NF 06 Search Results

XCM NFC 63-145 y2

Abstract: XCM-A110 XCM-A102 XCMA102 XCM-A115 XCM-F102 NFC 63-145 Y2 XCM-F110 XES-P2151 XCKJ10511H29
Contextual Info: Limit switches Double insulated, types XCK-P and XCK-T General characteristics Environment Conforming to standards 3 Products IEC 947-5-1, IEC 337-1, EN 60 947-5-1, NF C 63-146, VDE 0660-200, UL 508, CSA C22-2 n° 14 Machine assemblies IEC 204-1, EN 60 204-1, NF C 79-130

60Ghz

Abstract: FMM5716X ED-4701
Contextual Info: FMM5716X 60GHz Low Noise Amplifier FEATURES •Low Noise Figure :NF = 5 dB Typ. @ f = 60 GHz •High Associated Gain: |S21| = 22 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5716X is a low noise amplifier MMIC designed for

Contextual Info: FMM5716X 60GHz Low Noise Amplifier FEATURES •Low Noise Figure :NF = 5 dB Typ. @ f = 60 GHz •High Associated Gain: |S21| = 22 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5716X is a low noise amplifier MMIC designed for

ZA2BS834

Abstract: ZA2BS44 ZB2BE101 ZA2-BS44 ZB2BE102 ZA2-BS834 A600-Q600 XAC-A211 ZB2-BE101 VDE 0660-200
Contextual Info: Pendant control stations Double insulated, type XAC-A “Pistol grip” For control circuits Complete stations “ready for use” References : pages 5/65 to 5/67 Characteristics Environment Conforming to standards IEC 947-5-1, EN 60 947-5-1, IEC 337-1, NF C 63-146, VDE 0660-200

EPCOS 230 06 O

Abstract: spark gap EPCOS 350 06 O CAS02X-070
Contextual Info: Switching Spark Gap CAS02X-070 Ordering code: B88069X0700T502 DC spark-over voltage 1 2) 200 . 250 V ≤ 300 ms 1 000 000 Ignitions 350 15 150 2 60 V kΩ nF µH A Insulation resistance at 100 Vdc > 0.1 GΩ Capacitance at 1 MHz <2 pF Weight ~ 1.5 g Operation and storage temperature

edo 6166

Contextual Info: 10 4.4 rc r r^ S n r - nf m 6.5 I410-3 3.5 ► 0 7.4 ftte XT CX i / ha . x x o i/ \ xx 5. K a f f i r : 5350 3. {m n ^ < r m m M aNANAA / w- _ □x 0.7 Y Z o ca LD O w X SECT. E-E SCALE 3-D 60 50 00 54 73.66 60.96 46.56 40.64 .56 55.86 48.54 85. 6 70.46

3EEJP

Abstract: 6609009-4 pretema IEC -320 C14 POWER INLET
Contextual Info: EJ.Series 4.0.qxd 23.09.2005 12:06 Uhr Seite 1 EJ Series Enhanced Performance Compact RFI Filter IEC Connector Package EJ.Series 4.0.qxd 23.09.2005 12:06 Uhr Seite 2 EJ Series – Enhanced Performance Compact RFI Filter IEC Connector Package General Information / Allgemeine Informationen

phycomp capacitors npo

Abstract: ceramic capacitor 4.7 nf 500v yageo Phycomp NPO capacitor Yageo Ceramic multilayer NPO General purpose NP0
Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS C-Array NP0/X7R/Y5V 16 V TO 50 V sizes 0508 4 x 0402 / 0612 (4 x 0603) Product Specification – Feb 05, 2010 V.1 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors

xg1015-SE

Abstract: XG1015-SE-0G00 XG1015-SE LNA G1015-SE XG1015-SE-0G0T XG1015 NF50 G1015S
Contextual Info: 0.1-3.5 GHz GaAs pHEMT Current Adjustable, Low Noise Amplifier G1015-SE January 2010 - Rev 06-Jan-10 Features Single Voltage Supply 3V ~ 5V Integrated Active Bias Circuit Adjustable Current with an External Resistor Low Noise Figure, NF < 1 dB High Linearity, OIP3 > 34 dBm @ 2 GHz

PEF 4365

Abstract: PEF4265 PEF4265T pef 4265 PEf4265v PEF 4265 T V2.1 PEF4365 PEB 4265 V1.2 PEF 4265 V2.1 Samsung tantal
Contextual Info: February 2008 SLIC-E / TSLIC-E Subscriber Line Interface Circuit Enhanced Feature Set SLIC-E PEF 4265 , Version 2.1 SLIC-E2 (PEF 4265-2), Version 2.1 TSLIC-E (PEF 4365), Version 2.1 Preliminary Data Sheet Revision 2.2 Communication Solutions Edition 2008-02-06

3382mkp

Abstract: 470n 275v MKP 470n 275v iec 60384-14 CBB060 22222 338 20222 capacitor MKP X2 MANUFACTURER 220nm mkp 275v x2 2222 338 24 104
Contextual Info: BCcomponents DATA SHEET MKP 338 2 Interference suppression film capacitors Product specification Supersedes data of 2000-06-08 File under BCcomponents, BC05 2000 Sep 11 BCcomponents Product specification Interference suppression film capacitors MKP 338 2 MKP RADIAL POTTED TYPE

1650M

Abstract: 2000M BGA615L7 T1595
Contextual Info: Data Sheet, Version 1.0, June 2005 BGA615L7 Silicon Germanium GPS Low Noise Amplifier Automotive and Industrial Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2005-06-14 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München

IEC 60384

Abstract: phycomp X7R 50V class 2 Yageo Ceramic multilayer NPO phycomp 1206 100NF 100V X7R
Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS C-Array NP0/X7R/Y5V 16 V TO 50 V sizes 0508 4 x 0402 / 0612 (4 x 0603) Product Specification – April 15, 2013 V. 2 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors

YNM0007

Abstract: YNM0008 General purpose NP0
Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF Product Specification – Jan 06, 2011 V.6 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors General Purpose

MCR03*J102

Abstract: CL10B104KONC MCR03*J102 resistor sige an-061 LL1608-FS39NJ SGA-8343 MCH185A2R2C AN-044
Contextual Info: Design Application Note - AN-061 SGA-8343 GPS Application Circuits Abstract Sirenza Microdevices’ SGA-8343 is a high performance SiGe amplifier designed for operation from DC to 6 GHz. This application note illustrates application circuits for GPS Global Positioning System frequency band (1575 MHz). The first application circuit

Contextual Info: RHF1401 Rad-hard 14-bit 30 Msps A/D converter Datasheet − production data Features Ceramic SO-48 package • Qml-V qualified, smd 5962-06260 ■ Rad hard: 300 kRad Si TID ■ Failure immune (SEFI) and latch-up immune (SEL) up to 120 MeV-cm2/mg at 2.7 V and

smd transistor n6

Abstract: SMD code E2
Contextual Info: RHF1401 Rad-hard 14-bit 30 Msps A/D converter Datasheet − production data Features Ceramic SO-48 package • Qml-V qualified, smd 5962-06260 ■ Rad hard: 300 kRad Si TID ■ Failure immune (SEFI) and latch-up immune (SEL) up to 120 MeV-cm2/mg at 2.7 V and

MARKING 5F SOT363

Abstract: BGA2022 AN00059
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2022 MMIC mixer Product specification Supersedes data of 2000 Jun 06 2000 Dec 04 Philips Semiconductors Product specification MMIC mixer BGA2022 FEATURES PINNING • Large frequency range: PIN DESCRIPTION

engel transformers

Contextual Info: Multilayer ceramic capacitors ESD robust, X7R, case sizes 0603 and 0805 Series/Type: Chip Ordering code: B379*E Date: Version: 25.02.2009 3, preliminary data sheet Content of inside pages of data sheet. Data will be automatically entered into headers and

2.1 channel amplifier ckt

Abstract: 4000 watts power amplifier circuit diagram CGB8001 CGB8001-SC CGB8001-SC-0G00 CGB8001-SC-0G0T PB-CGB8001-SC-00A0
Contextual Info: DC-2.8 GHz InGaP HBT 0.5W Medium Power Amplifier October 2008 - Rev 06-Oct-08 CGB8001-SC Features Functional Block Diagram SOT-89 18 dBm Linear Power @ 2140 MHz 15.5 dB Gain @ 2140 MHz 12 dB Gain @ 2700 MHz 27 dBm P1dB @ 2140 MHz Low Performance Variation Over Temperature

Contextual Info: RF2516 Preliminary
  

      • 315/433MHz Band Systems • AM/ASK/OOK Transmitter • Local Oscillator Source • Wireless Security Systems
    .009 GaAs MESFET SiGe HBT Si CMOS .196 .189 .025 .069 .053 .244 .228

Contextual Info: 1GB, 2GB, 4GB x72, ECC, SR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT9JSF12872PZ – 1GB MT9JSF25672PZ – 2GB MT9JSF51272PZ – 4GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C A – PCB 0692) • DDR3 functionality and operations supported as defined in the component data sheet

igbt 5SNG

Abstract: 5SNG 0250P330305 5SNG0250P330305
Contextual Info: Data Sheet, Doc. No. 5SYA 1426-01 06-2012 5SNG 0250P330305 HiPak IGBT Module VCE = 3300 V IC = 250 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

5SYA2058

Contextual Info: Data Sheet, Doc. No. 5SYA 1426-01 06-2012 5SNG 0250P330305 ABB HiPakTM IGBT Module VCE = 3300 V IC = 250 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance