6.2D DIODE Search Results

MA8062

Abstract: MAZL062D
Contextual Info: MA111 Zener Diodes Composite Elements MAZL062D Silicon planer type Unit : mm Constant voltage, constant current, waveform cripper and surge absorption circuit +0.2 2.8 -0.3 +0.25 0.65±0.15 1.5 -0.05 0.65±0.15 3 2 +0.1 0.16 -0.06 0 to 0.1 0.8 1.1 -0.1 +0.2

Z17D

Abstract: Z27D Z24D Z11D 6/18/Z11D
Contextual Info: Silicon zener diodes. 3 Watts T he plastic m aterial c arrie s U /L reco g n itio n 9 4 V -0 . 3 E Z 3 .9 0 5 /S Z 5 5 S e n e s . 3 .0 W atts. C ase ; D O -41/SM A O utline î 2/7 N om inal Z ener V oltage TYPE A xial Lead | S.M .D . M axim um R everse L eakage C urrent

MA8062

Abstract: MAZL062D
Contextual Info: MA111 Zener Diodes Composite Elements MAZL062D Silicon planer type Unit : mm Constant voltage, constant current, waveform cripper and surge absorption circuit +0.2 2.8 -0.3 +0.25 0.65±0.15 1.5 -0.05 0.65±0.15 Four anode-common element wiring of MA8062 3

Contextual Info: 3 E Z 3.9D 5 thru 3EZ200D5 Microsemi Corp. $ The û«xa» experts SCOTTSDALE, AZ For more information call: m m s m im s m 602 941-6300 SILICON 3 WATT ZENER DIODE FEATURES • ZENER VOLTAGE 3 .9V to 200 V • HIGH SURGE CURRENT RATING • 3 W ATTS DISSIPATION IN A N O RM ALLY 1 W ATT PACKAGE

Contextual Info: MA111 Zener Diodes Composite Elements MAZL062D Silicon planer type Unit : mm Constant voltage, constant current, waveform cripper and surge absorption circuit +0.2 2.8 -0.3 +0.25 0.65±0.15 1.5 -0.05 0.65±0.15 0 to 0.1 0.8 +0.2 1.1 -0.1 Average forward current

Contextual Info: International PD'9-1229 [jogRectifier_ IRFP350LC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Cjgg, C0Ss, ^rss Isolated Central Mounting Hole Dynamic dv/dt Rated

Contextual Info: International jog Rectifier HEXFET Power MOSFET • • • • • • MB5545H DDISSTB S2D WMIUR PD-9.573B IRFPE50 INTERNATIO N AL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling

DIODE C249

Abstract: C246 C247
Contextual Info: PD - 9.1264C International IGR Rectifier IRF7606 HEXFET Power M O S F E T • • • • • • • Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape and Reel Fast Switching

IRFP250

Abstract: Diode marking WW1 diode ww1 05 443D MOSFET IRFp250
Contextual Info: PD-9.443D International K Rectifier IRFP250 HEXFET® P o w e r M O S F E T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^DSS ~ 2 0 0 V

Contextual Info: PD-9.995 International Hü Rectifier IRFP354 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Vdss - 450V R DS on = 0 .35Q