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610A
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Hammond Manufacturing
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Pulse Transformer, 3.9 mH Prim. Inductance, 60 uH Prim. Leakage |
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209.65KB |
2 |
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610A608F
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Bomar Interconnect Products
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Coaxial Connectors (RF), Connectors, Interconnects, MINI UHF PLUG (RG58) |
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3 |
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610A608G
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Bomar Interconnect Products
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Coaxial Connectors (RF), Connectors, Interconnects, MINI UHF PLUG (RG62) |
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3 |
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610AA
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Hammond Manufacturing
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Pulse Transformer, 3 mH Prim. Inductance, 23 pF Interwinding Cap, 22 uH Prim. Leakage |
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209.65KB |
2 |
JCT610A
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Jiangsu JieJie Microelectronics Co Ltd
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10 A SCR with 600 V repetitive peak off-state and reverse voltage, 2500 VRMS rated insulation, TO-220A package, high dV/dt capability, and 110 A non-repetitive surge current for 10 ms. |
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CJ13-160001610A20
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JCET Group
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SMD3225 16MHz crystal resonator with 16pF load capacitance, ±10ppm frequency tolerance, fundamental mode, operating temperature from -20 to +70°C, and reflow soldering compatible. |
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VS4610AZ
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VANGUARD
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40V/12A N-Channel Advanced Power MOSFET with low on-resistance of 9 mΩ at VGS=10V, 12 mΩ at VGS=4.5V, suitable for 5V logic level control and high-efficiency switching applications in SOT223 package. |
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VS4610AP
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VANGUARD
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40V/60A N-Channel Power MOSFET with 6.6 mΩ RDS(on) at VGS=10V, 10 mΩ at VGS=4.5V, 37W power dissipation, and PDFN5x6 package. |
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VS3610AP
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VANGUARD
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30V/70A N-Channel Advanced Power MOSFET with 3.7 mΩ RDS(on) at VGS=10V, 5.4 mΩ at VGS=4.5V, available in PDFN5x6 package, designed for logic level control and fast switching applications. |
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GP1610A
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Jiangsu JieJie Microelectronics Co Ltd
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GP1606A~GP1610A general purpose rectifiers in TO-220A package feature 600 to 1000V repetitive peak reverse voltage, 16A average forward current, glass passivated junction, and lead-free, 94V-0 flammability rated plastic package. |
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VS4610AB
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VANGUARD
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40V/53A N-Channel Advanced Power MOSFET with 7.2 mΩ typical RDS(on) at VGS=10V, 11 mΩ at VGS=4.5V, in TDFN3.3x3.3 package, suitable for 5V logic level control and high-efficiency power switching applications. |
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JMSL0610AGDQ
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Jiangsu JieJie Microelectronics Co Ltd
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60 V dual N-channel power MOSFET in PDFN5x6-8L-D package with 8.5 mΩ typical RDS(ON) at 10 V VGS, 38 A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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VS4610AD
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VANGUARD
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40V/65A N-Channel Advanced Power MOSFET with low on-resistance of 6.6 mΩ at VGS=10V, TO-252 package, suitable for high-efficiency power switching applications. |
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VS3610AD
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VANGUARD
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30V/85A N-Channel Advanced Power MOSFET with 4.3 mOhm RDS(on) at VGS=10V, TO-252 package, designed for high-efficiency power management applications requiring low on-resistance and fast switching performance. |
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VS3610AI
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VANGUARD
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30V/85A N-Channel Advanced Power MOSFET with 4.2 mΩ RDS(on) at VGS=10V, TO-251SL package, designed for high efficiency and fast switching applications. |
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JMSL0610AGD
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Jiangsu JieJie Microelectronics Co Ltd
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Dual N-Ch Power MOSFET with 60 V drain-source voltage, 35 A continuous drain current, 8.5 mΩ typical RDS(ON) at VGS = 10V, and 10.2 mΩ at VGS = 4.5V in a PDFN5x6-8L-D package. |
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DIO7610A
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Dioo Microcircuits Co Ltd
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Ultra-low on-resistance 6A load switch with 13mΩ typical RDS(ON), 0.6V to 5.5V input voltage range, programmable soft-start via external capacitor, quick output discharge, and over-temperature protection in a DFN2x2-8 package. |
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VS3610AE
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VANGUARD
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30V/64A N-Channel Advanced Power MOSFET with 4 mΩ RDS(on) at VGS=10V, 5.7 mΩ at VGS=4.5V, available in PDFN3333 package, featuring low on-resistance, fast switching, and 100% avalanche testing capability. |
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VS4610AE
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VANGUARD
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40V/55A N-Channel Advanced Power MOSFET with RDS(on) of 6.8 mΩ at VGS=10V, available in PDFN3333 package, featuring high efficiency, fast switching, and 100% avalanche testing capability. |
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JCT610A
